Led by 3GPP, industry and research communities are now investing tremendous efforts to develop advanced technologies in order to meet all related requirements of ITU“IMT 2020 and Beyond”for 5G wireless communication...Led by 3GPP, industry and research communities are now investing tremendous efforts to develop advanced technologies in order to meet all related requirements of ITU“IMT 2020 and Beyond”for 5G wireless communications in terms of enhanced mobile broadband (eMBB), massive machine?type communications (mMTC) and ultra?reli?able and low latency communications (URLLC). 3GPP has defined a new name for its planned standard proposal of 5G as“New Radio”(NR), which will be submitted to ITU for the official international 5G standard. The related technol?ogies for 5G NR can mainly be categorized into four areas, namely, 1) new mod?ulation and coding algorithms including multi?user superposition and shared access, enhanced waveform generation and advanced error?correction coding;展开更多
There is a lot of research that has been done on electroplating of metals depending on the type of application. In this chapter, the importance of this technique to the semiconductor industry is discussed in detail fr...There is a lot of research that has been done on electroplating of metals depending on the type of application. In this chapter, the importance of this technique to the semiconductor industry is discussed in detail from an experimental as well as a modeling standpoint. In particular, the effect of solution variables i.e. chloride, accelerator, suppressor on copper electrodeposition is discussed. This knowledge is applied to achieve a defect-free, bottom-up metal/copper fill that eventually, is one of the most critical processes in this billion-dollar industry.展开更多
A model is developed to simulate the processes that may cause run-away exothermic reactions in the downstream of typical deposition reactors used in semiconductor manufacturing. This process model takes into account v...A model is developed to simulate the processes that may cause run-away exothermic reactions in the downstream of typical deposition reactors used in semiconductor manufacturing. This process model takes into account various modes of mass and heat transport as well as chemical reactions and provides insight into the key mechanisms that trigger the uncontrolled energetic reactions and cause the formation of potentially damaging hotspots. Using the developed model, a parametric study was conducted to analyze the effects of various system and operating conditions. In particular, the effects of the gaseous reactants concentrations and incoming temperature, the extent of accumulation of deposits, and the gas flow rate, and the reactions activation energy and heat of reaction are analyzed and the location and time of hot spot formation for each case are determined. The results are useful in developing strategies for mitigating the occurrence of the damaging energetic events.展开更多
High spectral,spatial,vertical and temporal resolution data are increasingly available and result in the serious challenge to pro-cess big remote-sensing images effectively and efficiently.This article introduced how ...High spectral,spatial,vertical and temporal resolution data are increasingly available and result in the serious challenge to pro-cess big remote-sensing images effectively and efficiently.This article introduced how to conduct supervised image classification by implementing maximum likelihood classification(MLC)over big image data on a field programmable gate array(FPGA)cloud.By comparing our prior work of implementing MLC on conventional cluster of multicore computers and graphics processing unit,it can be concluded that FPGAs can achieve the best performance in comparison to conventional CPU cluster and K40 GPU,and are more energy efficient.The proposed pipelined thread approach can be extended to other image-processing solutions to handle big data in the future.展开更多
This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN w...This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.展开更多
文摘Led by 3GPP, industry and research communities are now investing tremendous efforts to develop advanced technologies in order to meet all related requirements of ITU“IMT 2020 and Beyond”for 5G wireless communications in terms of enhanced mobile broadband (eMBB), massive machine?type communications (mMTC) and ultra?reli?able and low latency communications (URLLC). 3GPP has defined a new name for its planned standard proposal of 5G as“New Radio”(NR), which will be submitted to ITU for the official international 5G standard. The related technol?ogies for 5G NR can mainly be categorized into four areas, namely, 1) new mod?ulation and coding algorithms including multi?user superposition and shared access, enhanced waveform generation and advanced error?correction coding;
文摘There is a lot of research that has been done on electroplating of metals depending on the type of application. In this chapter, the importance of this technique to the semiconductor industry is discussed in detail from an experimental as well as a modeling standpoint. In particular, the effect of solution variables i.e. chloride, accelerator, suppressor on copper electrodeposition is discussed. This knowledge is applied to achieve a defect-free, bottom-up metal/copper fill that eventually, is one of the most critical processes in this billion-dollar industry.
文摘A model is developed to simulate the processes that may cause run-away exothermic reactions in the downstream of typical deposition reactors used in semiconductor manufacturing. This process model takes into account various modes of mass and heat transport as well as chemical reactions and provides insight into the key mechanisms that trigger the uncontrolled energetic reactions and cause the formation of potentially damaging hotspots. Using the developed model, a parametric study was conducted to analyze the effects of various system and operating conditions. In particular, the effects of the gaseous reactants concentrations and incoming temperature, the extent of accumulation of deposits, and the gas flow rate, and the reactions activation energy and heat of reaction are analyzed and the location and time of hot spot formation for each case are determined. The results are useful in developing strategies for mitigating the occurrence of the damaging energetic events.
基金This research was partially supported by the National Science Foundation through the award SMA-1416509.
文摘High spectral,spatial,vertical and temporal resolution data are increasingly available and result in the serious challenge to pro-cess big remote-sensing images effectively and efficiently.This article introduced how to conduct supervised image classification by implementing maximum likelihood classification(MLC)over big image data on a field programmable gate array(FPGA)cloud.By comparing our prior work of implementing MLC on conventional cluster of multicore computers and graphics processing unit,it can be concluded that FPGAs can achieve the best performance in comparison to conventional CPU cluster and K40 GPU,and are more energy efficient.The proposed pipelined thread approach can be extended to other image-processing solutions to handle big data in the future.
文摘This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.
