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电子束直写邻近效应校正技术 被引量:2
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作者 陈宝钦 任黎明 +4 位作者 刘明 王云翔 龙世兵 陆晶 李泠 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第B05期221-225,共5页
通过蒙特卡罗模拟方法研究电子散射过程,探讨邻近效应产生机理并寻求有效的邻近效应校正途径。实验结果表明:邻近效应现象是一种综合效应,可以通过优化工艺条件有效地抑制邻近效应的影响,使邻近效应校正达到预期的效果。
关键词 纳米结构图形 电子束直写 蒙特卡罗模拟 邻近效应校正
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Temperature Dependence of Characteristics for Multimode Interference Based 3-dB Coupler in SOI
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作者 YANQing-feng LIUZhong-li 《Semiconductor Photonics and Technology》 CAS 2003年第1期14-17,共4页
The temperature dependence of characteristics for multimode interference(MMI) based 3-dB coupler in silicon-on-insulator is analyzed, which originates from the relatively high thermo-optic coefficient of silicon. For ... The temperature dependence of characteristics for multimode interference(MMI) based 3-dB coupler in silicon-on-insulator is analyzed, which originates from the relatively high thermo-optic coefficient of silicon. For restricted interference 3-dB MMI coupler, the output power uniformity is ideally 0 at room temperature and becomes 0.32 dB when temperature rises up to 550 K.For symmetric interference 3-dB MMI coupler, the power uniformity keeps ideally 0 due to its intrinsic symmetric interference mechanism. With the temperature rising, the excess loss of the both devices increases. The performance deterioration due to temperature variety is more obvious to restricted interference MMI 3-dB coupler, comparing with that of symmetric interference MMI 3-dB coupler. 展开更多
关键词 multimode interference COUPLER silicon―on―insulator thermo―optics integrated opotoelectronics
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