This paper reports a comparison between the two kinds of damage behavior in silicon implanted with P_2^+ molecular ions and P^+ atomic ions. The dependence of damage enhancement effect of P_2^+ implanted silicon on io...This paper reports a comparison between the two kinds of damage behavior in silicon implanted with P_2^+ molecular ions and P^+ atomic ions. The dependence of damage enhancement effect of P_2^+ implanted silicon on ion doses, energies and target temperatures, and their annealing behavior in subsequent thermal anneal process are investigated systematically. A multiple collision model has been developed to elucidate the mechanism of the damage enhancement effect.展开更多
文摘This paper reports a comparison between the two kinds of damage behavior in silicon implanted with P_2^+ molecular ions and P^+ atomic ions. The dependence of damage enhancement effect of P_2^+ implanted silicon on ion doses, energies and target temperatures, and their annealing behavior in subsequent thermal anneal process are investigated systematically. A multiple collision model has been developed to elucidate the mechanism of the damage enhancement effect.
