In this paper,we propose an RLC equivalent circuit model theory which can accurately predict the spectral response and resonance characteristics of metamaterial absorption structures,extend its design,and characterize...In this paper,we propose an RLC equivalent circuit model theory which can accurately predict the spectral response and resonance characteristics of metamaterial absorption structures,extend its design,and characterize the parameters of the model in detail.By employing this model,we conducted computations to characterize the response wavelength and bandwidth of variously sized metamaterial absorbers.A comparative analysis with Finite Difference Time Domain(FDTD)simulations demonstrated a remarkable level of consistency in the results.The designed absorbers were fabricated using micro-nano fabrication processes,and were experimentally tested to demonstrate absorption rates exceeding 90%at a wavelength of 9.28μm.The predicted results are then compared with test results.The comparison reveals good consistency in two aspects of the resonance responses,thereby confirming the rationality and accuracy of this model.展开更多
Hydrogen has emerged as a promising clean energy carrier,and the development of cost-effective electrocatalysts that retain high activity under acidic media is crucial for advancing proton exchange membrane water elec...Hydrogen has emerged as a promising clean energy carrier,and the development of cost-effective electrocatalysts that retain high activity under acidic media is crucial for advancing proton exchange membrane water electrolysis(PEMWE).Here,we propose the SiO_(x)/RuCoO_(x)nanoparticles(SiO_(x)/RuCoO_(x)NPs)as bifunctional electrocatalysts for efficient hydrogen evolution reaction(HER)and oxygen evolution reaction(OER)under acidic media.The Ru-O-Si interface,along with charge transfer between Ru and Co,modulates the d-band electronic structure of the Ru site,achieving superior performance with a low HER overpotential of 18 mV at 10 mA cm^(-2)and a turnover frequency of 8.86 H_(2)s^(-1)at 100 mV.For OER,the overpotential is 217 mV at 10 mA cm^(-2).SiO_(x)/RuCoO_(x)NPs exhibit a cell voltage of 1.482 V at 10 mA cm^(-2)with an energy conversion efficiency of 83.0%.This work takes a significant step toward achieving efficient and cost-effective bifunctional electrocatalysts for water splitting,playing a critical role in the transition to clean energy technologies.展开更多
Lithium-carbon dioxide(Li-CO_(2))batteries using high ion-conductive inorganic molten salt electrolytes have recently attracted much attention due to the high energy density and potential application of carbon neutral...Lithium-carbon dioxide(Li-CO_(2))batteries using high ion-conductive inorganic molten salt electrolytes have recently attracted much attention due to the high energy density and potential application of carbon neutrality.However,the poor Li-ion conductivity of the molten-salt electrolytes at room temperature(RT)makes these batteries lose most of their capacity and power as the temperature falls below 80℃.Here,inspired by the greenhouse effect,we report an RT molten salt Li-CO_(2)battery where solar energy can be efficiently harvested and converted into heat that is further localized on the cathode consisting of plasmonic ruthenium(Ru)catalysts and Li_(2)CO_(3)-based products via a greenhouse-like phenomenon.As a result,the solar-driven molten salt Li-CO_(2)battery demonstrates a larger full discharge/charge capacity of 9.5 mA h/8.1 mA h,and a longer cycle lifespan of 250 cycles at 500 mA/g with a limited capacity of 500 mA h/g at RT than the molten salt Li-CO_(2)battery at 130℃.Notably,the average temperature of the cathode increases by 8℃ after discharge to 0.75 mA h,which indicates the infrared radiation from Ru catalysts can be effectively suppressed by discharged Li_(2)CO_(3)-based products.This battery technology paves the way for developing low-temperature molten salt energy storage devices.展开更多
The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes(APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. ...The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes(APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation–recombination, local hopping conductivity, band-to-band tunneling, and trap-assisted tunneling currents, we found that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.展开更多
The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM （transfer length method） test patterns with Au/Ti/A1/Ti/SiC structure is formed on N-wells created by P^＋ ion implantation into Si-faced...The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM （transfer length method） test patterns with Au/Ti/A1/Ti/SiC structure is formed on N-wells created by P^＋ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance pc as low as 8.64×10-6Ω·cm^2 is achieved after annealing in N2 at 900℃ for 5min. The sheet resistance Rsh of the implanted layers is 975Ω. X-ray diffraction （XRD） analysis shows the formation of Ti3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.展开更多
This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi2/SiC structure axe formed on N-wells created by N^＋ ion im...This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi2/SiC structure axe formed on N-wells created by N^＋ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi2 films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance Pc of NiSi contact to n-type 6H-SiC as low as 1.78× 10^-6Ωcm^2 is achieved after a two-step annealing at 350 ℃for 20 min and 950℃ for 3 min in N2. And 3.84×10-6Ωcm^2 for NiSi2 contact is achieved. The result for sheet resistance Rsh of the N＋ implanted layers is about 1210Ω/□. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.展开更多
The through silicon via （TSV） technology has proven to be the critical enabler to realize a three-dimensional （3D） gigscale system with higher performance but shorter interconnect length. However, the received dig...The through silicon via （TSV） technology has proven to be the critical enabler to realize a three-dimensional （3D） gigscale system with higher performance but shorter interconnect length. However, the received digital signal after trans- mission through a TSV channel, composed of redistribution layers （RDLs）, TSVs, and bumps, is degraded at a high data-rate due to the non-idealities of the channel. We propose the Chebyshev multisection transformers to reduce the signal reflec- tion of TSV channel when operating frequency goes up to 20 GHz, by which signal reflection coefficient （$11） and signal transmission coefficient （$21） are improved remarkably by 150% and 73.3%, respectively. Both the time delay and power dissipation are also reduced by 4% and 13.3%, respectively. The resistance-inductance-conductance-capacitance （RLGC） elements of the TSV channel are iterated from scattering （S）-parameters, and the proposed method of weakening the signal reflection is verified using high frequency simulator structure （HFSS） simulation software by Ansoft.展开更多
We describe the microfabrication of ^85Rb vapour cells using a glass-silicon anodic bonding technique and in situ chemical reaction between rubidium chloride and barium azide to produce Rb. Under controlled conditions...We describe the microfabrication of ^85Rb vapour cells using a glass-silicon anodic bonding technique and in situ chemical reaction between rubidium chloride and barium azide to produce Rb. Under controlled conditions, the pure metallic Rb drops and buffer gases were obtained in the cells with a few mm^3 internal volumes during the cell sealing process. At an ambient temperature of 90 ℃ the optical absorption resonance of ^85Rb D1 transition with proper broadening and the corresponding coherent population trapping （CPT） resonance, with a signal contrast of 1.5% and linewidth of about 1.7 kHz, have been detected. The sealing quality and the stability of the cells have also been demonstrated experimentally by using the helium leaking detection and the after-9-month optoelectronics measurement which shows a similar CPT signal as its original status. In addition, the physics package of chip-scale atomic clock （CSAC） based on the cell was realized. The measured frequency stability of the physics package can reach to 2.1 × 10^-10 at one second when the cell was heated to 100 ℃ which proved that the cell has the quality to be used in portable and battery-operated devices.展开更多
This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes （SBDs） were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43 × 10^14 e/cm2. After radiation, the Schottky barrier height φB o...This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes （SBDs） were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43 × 10^14 e/cm2. After radiation, the Schottky barrier height φB of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV, but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD. The degradation of φB could be explained by interface states of changed Schottky contacts. The on-state resistance Rs of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, φB of the diodes recovered completely after one week, and the RS partly recovered.展开更多
Halo structure is added to sub-100 nm surrounding-gate metal-oxide-semiconductor fieldeffect-transistors （MOS- FETs） to suppress short channel effect. This paper develops the analytical surface potential and thresho...Halo structure is added to sub-100 nm surrounding-gate metal-oxide-semiconductor fieldeffect-transistors （MOS- FETs） to suppress short channel effect. This paper develops the analytical surface potential and threshold voltage models based on the solution of Poisson＇s equation in fully depleted condition for symmetric halo-doped cylindrical surrounding gate MOSFETs. The performance of the halo-doped device is studied and the validity of the analytical models is verified by comparing the analytical results with the simulated data by three dimensional numerical device simulator Davinci. It shows that the halo doping profile exhibits better performance in suppressing threshold voltage roll-off and drain-induced barrier lowering, and increasing carrier transport efficiency. The derived analytical models are in good agreement with Davinci.展开更多
Development of minimally invasive dry electrodes for recording biopotentials is presented. The detailed fabrication process is outlined. A dry electrode is formed by a number of microneedles. The lengths of the micron...Development of minimally invasive dry electrodes for recording biopotentials is presented. The detailed fabrication process is outlined. A dry electrode is formed by a number of microneedles. The lengths of the microneedles are about 150μm and the diameters are about 50μm. The tips of the microneedles are sharp enough to penetrate into the skin. The silver/silver chloride is grown on microneedle arrays and demonstrates good character. The electrocardiogram shows that the dry electrode is suitable for recording biopotentials.展开更多
The effects of the cathode operation voltage,the absorption coefficient,the carrier mobility,the temperature and the thickness of organic active layer on the short-circuit current density of single layer organic solar...The effects of the cathode operation voltage,the absorption coefficient,the carrier mobility,the temperature and the thickness of organic active layer on the short-circuit current density of single layer organic solar cells(OSCs) with Schottkey contacts are numerically studied.Quantitative dependences of the short-circuit current density on the respective parameters are obtained.The results show that a larger operation-voltage difference between the anode and the cathode,a higher carrier mobility as well as a thinner organic layer thickness are of great benefit to the increase of the short-circuit current density.展开更多
To overcome the bulk acoustic wave （BAW）, the triple transit signals and the discontinuous frequency band in the first generation surface acoustic wave＇s （FGSAW＇ s） wavelet device, the full transfer multistrip c...To overcome the bulk acoustic wave （BAW）, the triple transit signals and the discontinuous frequency band in the first generation surface acoustic wave＇s （FGSAW＇ s） wavelet device, the full transfer multistrip coupler （MSC） is applied to implement wavelet device, and a novel structure of the second generation surface acoustic wave＇s （SGSAW＇s） wavelet device is proposed. In the SGSAW＇ s wavelet device, the BAW is separated and eliminated in different acoustic propagating tracks, and the triple transit signal is suppressed. For arbitrary wavelet scale device, the center frequency is three times the radius of frequency band, which ensures that the frequency band of the SGSAW＇s wavelet device is continuous, and avoids losing signals caused by the discontinuation of frequency band. Experimental result confirms that the BAW suppression, ripples in band, receiving loss and insertion loss of the SGSAW＇ s wavelet device are remarkably improved compared with those of the FGSAW＇ s wavelet device.展开更多
In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room tempe...In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.展开更多
Si-PIN photodetectors having features such as low cost,small size,low weight,low voltage,and low power consumption are widely used as radiation detectors in electronic personal dosimeters(EPDs).The technical parameter...Si-PIN photodetectors having features such as low cost,small size,low weight,low voltage,and low power consumption are widely used as radiation detectors in electronic personal dosimeters(EPDs).The technical parameters of EPDs based on the Si-PIN photodetectors include photon energy response(PER),angular response,inherent error,and dose rate linearity.Among them,PER is a key parameter for evaluation of EPD measurement accuracy.At present,owing to the limitations of volume,power consumption,and EPD cost,the PER is usually corrected by a combination of single-channel counting techniques and filtering material methods.However,the above-mentioned methods have problems such as poor PER and low measurement accuracy.To solve such problems,in this study,a 1024-channel spectrometry system using a Si-PIN photodetector was developed and fullspectrum measurement in the reference radiation fields was conducted for radiation protection.The measurement results using the few-channel spectroscopy dose method showed that the PER could be controlled within±14%and±2%under the conditions of two and three energy intervals,respectively,with different channel numbers.The PER measured at 0°angle of radiation incidence meets the-29%to+67%requirements of IEC 61526:2010.Meanwhile,the channel number and counts-to-dose conversion factors formed in the experiment can be integrated into an EPD.展开更多
A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate （DG） MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derive...A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate （DG） MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.展开更多
Graphene derivatives,possessing strong Raman scattering and near-infrared absorption intrin-sically,have boosted many exciting biosensing applications.The tunability of the absorption characteristics,however,remains l...Graphene derivatives,possessing strong Raman scattering and near-infrared absorption intrin-sically,have boosted many exciting biosensing applications.The tunability of the absorption characteristics,however,remains largely unexplored to date.Here,we proposed a multilayer configuration constructed by a graphene monolayer sandwiched between a buffer layer and one-dimensional photonic crystal(1DPC)to achieve tunable graphene absorption under total in-ternal reflection(TIR).It is interesting that the unique optical properties of the buffer-graphene-1DPC multilayer structure,the electromagnetically induced transparency(EIT)-like and Fano-like absorptions,can be achieved with pre-determined resonance wavelengths,and furtherly be tuned by adjusting either the structure parameters or the incident angle of light.Theoretical analyses demonstrate that such EIT-and Fano-like absorptions are due to the interference of light in the multilayer structure and the complete transmission produced by the evanescent wave resonance in the configuration.The enhanced absorptions and the huge electrical field en-hancement effect exhibit potentials for broad applications,such as photoacoustic imaging and Raman imaging.展开更多
Interconnect power and repeater area are important in the interconnect optimization of nanometer scale integrated circuits. Based on the RLC interconnect delay model, by wire sizing, wire spacing arid adopting low-swi...Interconnect power and repeater area are important in the interconnect optimization of nanometer scale integrated circuits. Based on the RLC interconnect delay model, by wire sizing, wire spacing arid adopting low-swing interconnect technology, this paper proposed a power-area optimization model considering delay and bandwidth constraints simultaneously. The optimized model is verified based on 65-am and 90-nm complementary metal-oxide semiconductor （CMOS） interconnect parameters. The verified results show that averages of 36% of interconnect power and 26% of repeater area can be saved under 65-nm CMOS process. The proposed model is especially suitable for the computer-aided design of nanometer scale systems-on-chip.展开更多
Based on a stochastic wire length distributed model, the interconnect distribution of a three-dimensional integrated circuit （3D IC） is predicted exactly. Using the results of this model, a global interconnect desig...Based on a stochastic wire length distributed model, the interconnect distribution of a three-dimensional integrated circuit （3D IC） is predicted exactly. Using the results of this model, a global interconnect design window for a giga-scale system-on-chip （SOC） is established by evaluating the constraints of 1） wiring resource, 2） wiring bandwidth, and 3） wiring noise. In comparison to a two-dimensional integrated circuit （2D IC） in a 130-nm and 45-nm technology node, the design window expands for a 3D IC to improve the design reliability and system performance, further supporting 3D IC application in future integrated circuit design.展开更多
On-chip interconnect buses consume tens of percents of dynamic power in a nanometer scale integrated circuit and they will consume more power with the rapid scaling down of technology size and continuously rising cloc...On-chip interconnect buses consume tens of percents of dynamic power in a nanometer scale integrated circuit and they will consume more power with the rapid scaling down of technology size and continuously rising clock frequency, therefore it is meaningful to lower the interconnecting bus power in design. In this paper, a simple yet accurate interconnect parasitic capacitance model is presented first and then, based on this model, a novel interconnecting bus optimization method is proposed. Wire spacing is a process for spacing wires for minimum dynamic power, while wire ordering is a process that searches for wire orders that maximally enhance it. The method, i.e., combining wire spacing with wire ordering, focuses on bus dynamic power optimization with a consideration of bus performance requirements. The optimization method is verified based on various nanometer technology parameters, showing that with 50% slack of routing space, 25.71% and 32.65% of power can be saved on average by the proposed optimization method for a global bus and an intermediate bus, respectively, under a 65-nm technology node, compared with 21.78% and 27.68% of power saved on average by uniform spacing technology. The proposed method is especially suitable for computer-aided design of nanometer scale on-chip buses.展开更多
基金Supported by the National Natural Science Foundation of China(62174092)the Open Fund of State Key Laboratory of Infrared Physics(SITP-NLIST-ZD-2023-04)the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB0580000)。
文摘In this paper,we propose an RLC equivalent circuit model theory which can accurately predict the spectral response and resonance characteristics of metamaterial absorption structures,extend its design,and characterize the parameters of the model in detail.By employing this model,we conducted computations to characterize the response wavelength and bandwidth of variously sized metamaterial absorbers.A comparative analysis with Finite Difference Time Domain(FDTD)simulations demonstrated a remarkable level of consistency in the results.The designed absorbers were fabricated using micro-nano fabrication processes,and were experimentally tested to demonstrate absorption rates exceeding 90%at a wavelength of 9.28μm.The predicted results are then compared with test results.The comparison reveals good consistency in two aspects of the resonance responses,thereby confirming the rationality and accuracy of this model.
基金financially supported by the National Natural Science Foundation of China(No.61921005)the Key R&D Project of Nantong(No.GZ2024004)
文摘Hydrogen has emerged as a promising clean energy carrier,and the development of cost-effective electrocatalysts that retain high activity under acidic media is crucial for advancing proton exchange membrane water electrolysis(PEMWE).Here,we propose the SiO_(x)/RuCoO_(x)nanoparticles(SiO_(x)/RuCoO_(x)NPs)as bifunctional electrocatalysts for efficient hydrogen evolution reaction(HER)and oxygen evolution reaction(OER)under acidic media.The Ru-O-Si interface,along with charge transfer between Ru and Co,modulates the d-band electronic structure of the Ru site,achieving superior performance with a low HER overpotential of 18 mV at 10 mA cm^(-2)and a turnover frequency of 8.86 H_(2)s^(-1)at 100 mV.For OER,the overpotential is 217 mV at 10 mA cm^(-2).SiO_(x)/RuCoO_(x)NPs exhibit a cell voltage of 1.482 V at 10 mA cm^(-2)with an energy conversion efficiency of 83.0%.This work takes a significant step toward achieving efficient and cost-effective bifunctional electrocatalysts for water splitting,playing a critical role in the transition to clean energy technologies.
基金supported by the National Natural Science Foundation of China(NSFC,62104099,61921005,62105048,62204117 and 62073299)the Science and Technology Research Program of Chongqing Education Commission(KJQN202100633)+5 种基金the Postdoctoral Science Foundation of China(2021M693768 and 2021M701057)the Key Scientific Research Project in Colleges and Universities of Henan Province,China(21A416001)the Key Laboratory for Special Functional Materials(KEKT2022-06)the Natural Science Foundation of Jiangsu Province(BK20210275 and BK20230498)the support from Jiangsu Province Science Foundation for Youths(BK20210275)National Natural Science Foundation of China(NSFC,62204117)。
文摘Lithium-carbon dioxide(Li-CO_(2))batteries using high ion-conductive inorganic molten salt electrolytes have recently attracted much attention due to the high energy density and potential application of carbon neutrality.However,the poor Li-ion conductivity of the molten-salt electrolytes at room temperature(RT)makes these batteries lose most of their capacity and power as the temperature falls below 80℃.Here,inspired by the greenhouse effect,we report an RT molten salt Li-CO_(2)battery where solar energy can be efficiently harvested and converted into heat that is further localized on the cathode consisting of plasmonic ruthenium(Ru)catalysts and Li_(2)CO_(3)-based products via a greenhouse-like phenomenon.As a result,the solar-driven molten salt Li-CO_(2)battery demonstrates a larger full discharge/charge capacity of 9.5 mA h/8.1 mA h,and a longer cycle lifespan of 250 cycles at 500 mA/g with a limited capacity of 500 mA h/g at RT than the molten salt Li-CO_(2)battery at 130℃.Notably,the average temperature of the cathode increases by 8℃ after discharge to 0.75 mA h,which indicates the infrared radiation from Ru catalysts can be effectively suppressed by discharged Li_(2)CO_(3)-based products.This battery technology paves the way for developing low-temperature molten salt energy storage devices.
基金supported by the National Natural Science Foundation of China(No.61404132)the Fundamental Research Funds for the Central Universities(Nos.lzujbky-2015-302,lzujbky-2017-171,and lzujbky-2016-119)
文摘The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes(APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation–recombination, local hopping conductivity, band-to-band tunneling, and trap-assisted tunneling currents, we found that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.
基金Project supported by the National Basic Research Program of China （Grant No 2002CB311904）, the National Defense Basic Research Program of China （Grant No 51327010101） and the National Natural Science Foundation of China （Grant No 60376001）.
文摘The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM （transfer length method） test patterns with Au/Ti/A1/Ti/SiC structure is formed on N-wells created by P^＋ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance pc as low as 8.64×10-6Ω·cm^2 is achieved after annealing in N2 at 900℃ for 5min. The sheet resistance Rsh of the implanted layers is 975Ω. X-ray diffraction （XRD） analysis shows the formation of Ti3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.
基金Project supported by the National Basic Research Program of China （Grant No 2002CB311904）, the National Defense Basic Research Program of China （Grant No 51327010101） and the National Natural Science Foundation of China （Grant No 60376001）.
文摘This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi2/SiC structure axe formed on N-wells created by N^＋ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi2 films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance Pc of NiSi contact to n-type 6H-SiC as low as 1.78× 10^-6Ωcm^2 is achieved after a two-step annealing at 350 ℃for 20 min and 950℃ for 3 min in N2. And 3.84×10-6Ωcm^2 for NiSi2 contact is achieved. The result for sheet resistance Rsh of the N＋ implanted layers is about 1210Ω/□. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.
基金Project supported by the National Natural Science Foundation of China(Grant No.61204044)
文摘The through silicon via （TSV） technology has proven to be the critical enabler to realize a three-dimensional （3D） gigscale system with higher performance but shorter interconnect length. However, the received digital signal after trans- mission through a TSV channel, composed of redistribution layers （RDLs）, TSVs, and bumps, is degraded at a high data-rate due to the non-idealities of the channel. We propose the Chebyshev multisection transformers to reduce the signal reflec- tion of TSV channel when operating frequency goes up to 20 GHz, by which signal reflection coefficient （$11） and signal transmission coefficient （$21） are improved remarkably by 150% and 73.3%, respectively. Both the time delay and power dissipation are also reduced by 4% and 13.3%, respectively. The resistance-inductance-conductance-capacitance （RLGC） elements of the TSV channel are iterated from scattering （S）-parameters, and the proposed method of weakening the signal reflection is verified using high frequency simulator structure （HFSS） simulation software by Ansoft.
基金Project supported by National 863/973 Plans Projects (Grant Nos. 2006AA04Z361,2006CB932402)NSFC (Grant No. 60971002)
文摘We describe the microfabrication of ^85Rb vapour cells using a glass-silicon anodic bonding technique and in situ chemical reaction between rubidium chloride and barium azide to produce Rb. Under controlled conditions, the pure metallic Rb drops and buffer gases were obtained in the cells with a few mm^3 internal volumes during the cell sealing process. At an ambient temperature of 90 ℃ the optical absorption resonance of ^85Rb D1 transition with proper broadening and the corresponding coherent population trapping （CPT） resonance, with a signal contrast of 1.5% and linewidth of about 1.7 kHz, have been detected. The sealing quality and the stability of the cells have also been demonstrated experimentally by using the helium leaking detection and the after-9-month optoelectronics measurement which shows a similar CPT signal as its original status. In addition, the physics package of chip-scale atomic clock （CSAC） based on the cell was realized. The measured frequency stability of the physics package can reach to 2.1 × 10^-10 at one second when the cell was heated to 100 ℃ which proved that the cell has the quality to be used in portable and battery-operated devices.
基金supported by the National Natural Science Foundation of China(Grant No 60606022)the Xian Applied Materials Foundation of China(Grant No XA-AM-200702)the Advanced Research Foundation of China(Grant No 9140A08050508)
文摘This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes （SBDs） were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43 × 10^14 e/cm2. After radiation, the Schottky barrier height φB of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV, but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD. The degradation of φB could be explained by interface states of changed Schottky contacts. The on-state resistance Rs of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, φB of the diodes recovered completely after one week, and the RS partly recovered.
基金Project supported by the National Natural Science Foundation of China (Grant No 10771168)the State Key Development Program for Basic Research of China (Grant No 2005CB321701)Shaanxi Natural Science Foundation Program of China(Grant No SJ08-ZT13)
文摘Halo structure is added to sub-100 nm surrounding-gate metal-oxide-semiconductor fieldeffect-transistors （MOS- FETs） to suppress short channel effect. This paper develops the analytical surface potential and threshold voltage models based on the solution of Poisson＇s equation in fully depleted condition for symmetric halo-doped cylindrical surrounding gate MOSFETs. The performance of the halo-doped device is studied and the validity of the analytical models is verified by comparing the analytical results with the simulated data by three dimensional numerical device simulator Davinci. It shows that the halo doping profile exhibits better performance in suppressing threshold voltage roll-off and drain-induced barrier lowering, and increasing carrier transport efficiency. The derived analytical models are in good agreement with Davinci.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60776024, 60877035 and 90820002, tile National High-Technology Research and Development Program of China under Grant Nos 2007AA03Z427, 2007AA04Z329 and 2007AA04Z254.
文摘Development of minimally invasive dry electrodes for recording biopotentials is presented. The detailed fabrication process is outlined. A dry electrode is formed by a number of microneedles. The lengths of the microneedles are about 150μm and the diameters are about 50μm. The tips of the microneedles are sharp enough to penetrate into the skin. The silver/silver chloride is grown on microneedle arrays and demonstrates good character. The electrocardiogram shows that the dry electrode is suitable for recording biopotentials.
基金supported by the Natural Science Foundation of Gansu Province (No.0803RJZA104)the Open Project of Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou University (No.MMM 200811)
文摘The effects of the cathode operation voltage,the absorption coefficient,the carrier mobility,the temperature and the thickness of organic active layer on the short-circuit current density of single layer organic solar cells(OSCs) with Schottkey contacts are numerically studied.Quantitative dependences of the short-circuit current density on the respective parameters are obtained.The results show that a larger operation-voltage difference between the anode and the cathode,a higher carrier mobility as well as a thinner organic layer thickness are of great benefit to the increase of the short-circuit current density.
基金This project was supported by the National Natural Science Foundation of China (60476037 ,60176020) and the Doc-toral Foundation of the Ministry of Education of China (20020698014)
文摘To overcome the bulk acoustic wave （BAW）, the triple transit signals and the discontinuous frequency band in the first generation surface acoustic wave＇s （FGSAW＇ s） wavelet device, the full transfer multistrip coupler （MSC） is applied to implement wavelet device, and a novel structure of the second generation surface acoustic wave＇s （SGSAW＇s） wavelet device is proposed. In the SGSAW＇ s wavelet device, the BAW is separated and eliminated in different acoustic propagating tracks, and the triple transit signal is suppressed. For arbitrary wavelet scale device, the center frequency is three times the radius of frequency band, which ensures that the frequency band of the SGSAW＇s wavelet device is continuous, and avoids losing signals caused by the discontinuation of frequency band. Experimental result confirms that the BAW suppression, ripples in band, receiving loss and insertion loss of the SGSAW＇ s wavelet device are remarkably improved compared with those of the FGSAW＇ s wavelet device.
基金Project supported by the National Basic Research Program of China(Grant Nos.2008CB925002 and 2010CB934200)the National Natural Science Foundation of China(Grant Nos.60825403 and 50972160)the National High Technology Research and Development Program of China(Grant No.2009AA03Z306)
文摘In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.
基金This work was partly supported by the National Key Scientific Instruments to Develop Dedicated Program(Nos.2013YQ090811 and 2016YFF0103800)the National Key Research and Development Program(No.2017YFF0211100).
文摘Si-PIN photodetectors having features such as low cost,small size,low weight,low voltage,and low power consumption are widely used as radiation detectors in electronic personal dosimeters(EPDs).The technical parameters of EPDs based on the Si-PIN photodetectors include photon energy response(PER),angular response,inherent error,and dose rate linearity.Among them,PER is a key parameter for evaluation of EPD measurement accuracy.At present,owing to the limitations of volume,power consumption,and EPD cost,the PER is usually corrected by a combination of single-channel counting techniques and filtering material methods.However,the above-mentioned methods have problems such as poor PER and low measurement accuracy.To solve such problems,in this study,a 1024-channel spectrometry system using a Si-PIN photodetector was developed and fullspectrum measurement in the reference radiation fields was conducted for radiation protection.The measurement results using the few-channel spectroscopy dose method showed that the PER could be controlled within±14%and±2%under the conditions of two and three energy intervals,respectively,with different channel numbers.The PER measured at 0°angle of radiation incidence meets the-29%to+67%requirements of IEC 61526:2010.Meanwhile,the channel number and counts-to-dose conversion factors formed in the experiment can be integrated into an EPD.
基金Project supported by the National Natural Science Foundation of China(Grant No.60876027)the Open Funds of Jiangsu Province Key Lab of ASIC Design(JSICK1007)
文摘A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate （DG） MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.
基金National Natural Science Foundation of China(NSFC)(81671726,81930048,81627805,61675104)Hong Kong Research Grant Council(25204416)+2 种基金Hong Kong Innovation and Technology Commission(ITS/022/18)Guangdong Science and Technology Commission(2019A1515011374)Shenzhen Science Commission Innovation Technology and(JCYJ20170818104421564)
文摘Graphene derivatives,possessing strong Raman scattering and near-infrared absorption intrin-sically,have boosted many exciting biosensing applications.The tunability of the absorption characteristics,however,remains largely unexplored to date.Here,we proposed a multilayer configuration constructed by a graphene monolayer sandwiched between a buffer layer and one-dimensional photonic crystal(1DPC)to achieve tunable graphene absorption under total in-ternal reflection(TIR).It is interesting that the unique optical properties of the buffer-graphene-1DPC multilayer structure,the electromagnetically induced transparency(EIT)-like and Fano-like absorptions,can be achieved with pre-determined resonance wavelengths,and furtherly be tuned by adjusting either the structure parameters or the incident angle of light.Theoretical analyses demonstrate that such EIT-and Fano-like absorptions are due to the interference of light in the multilayer structure and the complete transmission produced by the evanescent wave resonance in the configuration.The enhanced absorptions and the huge electrical field en-hancement effect exhibit potentials for broad applications,such as photoacoustic imaging and Raman imaging.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60725415 and 60971066)the National High-Tech Program of China (Grant Nos. 2009AA01Z258 and 2009AA01Z260)the National Science & Technology Important Project of China (Grant No. 2009ZX01034-002-001-005)
文摘Interconnect power and repeater area are important in the interconnect optimization of nanometer scale integrated circuits. Based on the RLC interconnect delay model, by wire sizing, wire spacing arid adopting low-swing interconnect technology, this paper proposed a power-area optimization model considering delay and bandwidth constraints simultaneously. The optimized model is verified based on 65-am and 90-nm complementary metal-oxide semiconductor （CMOS） interconnect parameters. The verified results show that averages of 36% of interconnect power and 26% of repeater area can be saved under 65-nm CMOS process. The proposed model is especially suitable for the computer-aided design of nanometer scale systems-on-chip.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60725415 and 60676009)the Natural Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2009ZX01034-002-001-005)
文摘Based on a stochastic wire length distributed model, the interconnect distribution of a three-dimensional integrated circuit （3D IC） is predicted exactly. Using the results of this model, a global interconnect design window for a giga-scale system-on-chip （SOC） is established by evaluating the constraints of 1） wiring resource, 2） wiring bandwidth, and 3） wiring noise. In comparison to a two-dimensional integrated circuit （2D IC） in a 130-nm and 45-nm technology node, the design window expands for a 3D IC to improve the design reliability and system performance, further supporting 3D IC application in future integrated circuit design.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60725415, 60971066, and 61006028)the National High-Tech Program of China (Grant Nos. 2009AA01Z258 and 2009AA01Z260)the National Key Lab Foundation,China (Grant No. ZHD200904)
文摘On-chip interconnect buses consume tens of percents of dynamic power in a nanometer scale integrated circuit and they will consume more power with the rapid scaling down of technology size and continuously rising clock frequency, therefore it is meaningful to lower the interconnecting bus power in design. In this paper, a simple yet accurate interconnect parasitic capacitance model is presented first and then, based on this model, a novel interconnecting bus optimization method is proposed. Wire spacing is a process for spacing wires for minimum dynamic power, while wire ordering is a process that searches for wire orders that maximally enhance it. The method, i.e., combining wire spacing with wire ordering, focuses on bus dynamic power optimization with a consideration of bus performance requirements. The optimization method is verified based on various nanometer technology parameters, showing that with 50% slack of routing space, 25.71% and 32.65% of power can be saved on average by the proposed optimization method for a global bus and an intermediate bus, respectively, under a 65-nm technology node, compared with 21.78% and 27.68% of power saved on average by uniform spacing technology. The proposed method is especially suitable for computer-aided design of nanometer scale on-chip buses.
