This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the t...This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.展开更多
The influence of silicon slice flatness on bonding technology and the relation between a foreign particle and resulting bubble are quantitatively presented by the elastic theory. It is demonstrated experimentally by X...The influence of silicon slice flatness on bonding technology and the relation between a foreign particle and resulting bubble are quantitatively presented by the elastic theory. It is demonstrated experimentally by X-ray double crystal diffractometry and infrared imager.展开更多
A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of hol...A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of holes through polysilicon/silicon interface oxide layer and reduced mobility mechanism in polysilicon. The modeling results based on this model are in good agreement with experimental data.展开更多
The residual mechanical stress in SiO<sub>2</sub> films results in the degradation of mobilitiesin MOSFETs. Based on the edge force approximation in SiO<sub>2</sub> films, the stress field in M...The residual mechanical stress in SiO<sub>2</sub> films results in the degradation of mobilitiesin MOSFETs. Based on the edge force approximation in SiO<sub>2</sub> films, the stress field in MOS devicesis calculated. The results here are in agreement with those measured by the Raman spectrummethod.展开更多
Fractal regions appearing in BSCCO films after annealing have been investigated by atomic force microscopy and transmission electron microscope.The fractal dimensions and fractal density(number of fractals per unit ar...Fractal regions appearing in BSCCO films after annealing have been investigated by atomic force microscopy and transmission electron microscope.The fractal dimensions and fractal density(number of fractals per unit area)are temperature dependent.At lower annealing temperature(450℃)both the morphologies and fractal dimensions closely resemble those arising in two dimensional diffusion-limited-aggregation(DLA)simulations.The observation results show that after annealing at 600℃ or higher temperature,the fractal regions changed,even disappeared,which means the growth mechanism is very different from that of traditional DLA.A random diffusion and successive nucleation model has been proposed to explain the results.展开更多
In bandpass sigma delta modulator, resonator is the key block, This papcr proposed a new resonator which can simplify the circuit implementation when designing bandpass modulator with Iowpass prototype. The effect of ...In bandpass sigma delta modulator, resonator is the key block, This papcr proposed a new resonator which can simplify the circuit implementation when designing bandpass modulator with Iowpass prototype. The effect of finite gain, finite bandwidth, and path mismatch on the resonator is analyzed. The function of the proposed resonator and the devired equations about path mismatch have been verified by switched capacitor software SWITCAR.展开更多
This paper advances the concept of piezoelectric modulation in GaAs resistors for the first time. The piezoelectric modulation effect of GaAs resistors is investigated both theoretically and experimentally using the c...This paper advances the concept of piezoelectric modulation in GaAs resistors for the first time. The piezoelectric modulation effect of GaAs resistors is investigated both theoretically and experimentally using the cantilever as an example. The results obtained show that the effect is related to the stress gradient.展开更多
1 Introduction The recent development of vacuum microelectronics has received much attention. Vacuum microelectronic devices combine the vacuum transport of electrons with the microfabrication in the IC industry, and ...1 Introduction The recent development of vacuum microelectronics has received much attention. Vacuum microelectronic devices combine the vacuum transport of electrons with the microfabrication in the IC industry, and show a prospect of wide applications. If the devices can operate at moderate voltages, the electric field of about 1×10~7 V/cm is required. Sharp cathodes have to be fabricated so as to intensify the electric field near cathodes under a voltage. It is obvious that the fabrication of sharp cathodes is one of the展开更多
基金Supported by the National Native Science Foundation of China
文摘This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.
文摘The influence of silicon slice flatness on bonding technology and the relation between a foreign particle and resulting bubble are quantitatively presented by the elastic theory. It is demonstrated experimentally by X-ray double crystal diffractometry and infrared imager.
基金Supported by National Natural Science Foundation of China
文摘A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of holes through polysilicon/silicon interface oxide layer and reduced mobility mechanism in polysilicon. The modeling results based on this model are in good agreement with experimental data.
文摘The residual mechanical stress in SiO<sub>2</sub> films results in the degradation of mobilitiesin MOSFETs. Based on the edge force approximation in SiO<sub>2</sub> films, the stress field in MOS devicesis calculated. The results here are in agreement with those measured by the Raman spectrummethod.
基金Supported by the National Natural Science Foundation of China under Grant No.6923010.
文摘Fractal regions appearing in BSCCO films after annealing have been investigated by atomic force microscopy and transmission electron microscope.The fractal dimensions and fractal density(number of fractals per unit area)are temperature dependent.At lower annealing temperature(450℃)both the morphologies and fractal dimensions closely resemble those arising in two dimensional diffusion-limited-aggregation(DLA)simulations.The observation results show that after annealing at 600℃ or higher temperature,the fractal regions changed,even disappeared,which means the growth mechanism is very different from that of traditional DLA.A random diffusion and successive nucleation model has been proposed to explain the results.
文摘In bandpass sigma delta modulator, resonator is the key block, This papcr proposed a new resonator which can simplify the circuit implementation when designing bandpass modulator with Iowpass prototype. The effect of finite gain, finite bandwidth, and path mismatch on the resonator is analyzed. The function of the proposed resonator and the devired equations about path mismatch have been verified by switched capacitor software SWITCAR.
文摘This paper advances the concept of piezoelectric modulation in GaAs resistors for the first time. The piezoelectric modulation effect of GaAs resistors is investigated both theoretically and experimentally using the cantilever as an example. The results obtained show that the effect is related to the stress gradient.
基金Project supported by the Youth Science Foundation of Southeast University.
文摘1 Introduction The recent development of vacuum microelectronics has received much attention. Vacuum microelectronic devices combine the vacuum transport of electrons with the microfabrication in the IC industry, and show a prospect of wide applications. If the devices can operate at moderate voltages, the electric field of about 1×10~7 V/cm is required. Sharp cathodes have to be fabricated so as to intensify the electric field near cathodes under a voltage. It is obvious that the fabrication of sharp cathodes is one of the
