The radiation-sensitive field effect transistors(RADFET)radiation dosimeter is a type of radiation detector based on the total dose effects of the p-channel metal-oxide-semiconductor(PMOS)transistor.The RADFET chip wa...The radiation-sensitive field effect transistors(RADFET)radiation dosimeter is a type of radiation detector based on the total dose effects of the p-channel metal-oxide-semiconductor(PMOS)transistor.The RADFET chip was fabricated in United Microelectronics Center 8-inch process with a six-layer photomask.The chip including two identical PMOS transistors,occupies a size of 610μm×610μm.Each PMOS has a W/L ratio of 300μm/50μm,and a 400 nm thick gate oxide,which is formed by a dry-wet-dry oxygen process.The wet oxygen-formed gate oxide with more traps can capture more holes during irradiation,thus significantly changing the PMOS threshold voltage.Pre-irradiation measurement results from ten test chips show that the initial average voltage of the PMOS is 1.961 V with a dispersion of 5.7%.The irradiation experiment is conducted in a cobalt source facility with a dose rate of 50 rad(Si)/s.During irradiation,a constant current source circuit of 10μA was connected to monitoring the shift in threshold voltage under different total dose.When the total dose is 100 krad(Si),the shift in threshold voltage was approximately 1.37 V,which demonstrates that an excellent radiation function was achieved.展开更多
Heavy ion-induced single event upsets(SEUs)of static random access memory(SRAM), integrated with three-dimensional integrated circuit technology, are evaluated using a Monte Carlo simulation method based on the Geant4...Heavy ion-induced single event upsets(SEUs)of static random access memory(SRAM), integrated with three-dimensional integrated circuit technology, are evaluated using a Monte Carlo simulation method based on the Geant4 simulation toolkit. The SEU cross sections and multiple cell upset(MCU) susceptibility of 3D SRAM are explored using different types and energies of heavy ions.In the simulations, the sensitivities of different dies of 3D SRAM show noticeable discrepancies for low linear energy transfers(LETs). The average percentage of MCUs of 3D SRAM increases from 17.2 to 32.95%, followed by the energy of ^(209)Bi decreasing from 71.77 to 38.28 MeV/u. For a specific LET, the percentage of MCUs presents a notable difference between the face-to-face and back-toface structures. In the back-to-face structure, the percentage of MCUs increases with a deeper die, compared with the face-to-face structure. The simulation method and process are verified by comparing the SEU cross sections of planar SRAM with experimental data. The upset cross sections of the planar process and 3D integrated SRAM are analyzed. The results demonstrate that the 3D SRAM sensitivity is not greater than that of the planar SRAM. The 3D process technology has the potential to be applied to the aerospace and military fields.展开更多
As Moore’s law approaching its end,electronics is hitting its power,bandwidth,and capacity limits.Photonics is able to overcome the performance limits of electronics but lacks practical photonic register and flexible...As Moore’s law approaching its end,electronics is hitting its power,bandwidth,and capacity limits.Photonics is able to overcome the performance limits of electronics but lacks practical photonic register and flexible control.Combining electronics and photonics provides the best of both worlds and is widely regarded as an important post-Moore’s direction.For stability and dynamic operations considerations,feedback tuning of photonic devices is required.For silicon photonics,the thermooptic effect is the most frequently used tuning mechanism due to the advantages of high efficiency and low loss.However,it brings new design requirements,creating new design challenges.Emerging applications,such as optical phased array,optical switches,and optical neural networks,employ a large number of photonic devices,making PCB tuning solutions no longer suitable.Electronic-photonic-converged solutions with compact footprints will play an important role in system scalability.In this paper,we present a unified model for thermo-optic feedback tuning that can be specialized to different applications,review its recent advances,and discuss its future trends.展开更多
In this paper,ZnZnFe_(2)O_(4) nanorods were prepared using Zn/Fe metal organic framework(MOF)as precursors,and ZnZnFe_(2)O_(4)/reduced graphene oxide(rGO)was prepared by hydrothermal method.The morphology and composit...In this paper,ZnZnFe_(2)O_(4) nanorods were prepared using Zn/Fe metal organic framework(MOF)as precursors,and ZnZnFe_(2)O_(4)/reduced graphene oxide(rGO)was prepared by hydrothermal method.The morphology and composition of the ZnZnFe_(2)O_(4)/rGO nanocomposite were characterized,and the results showed that the MOF-derived ZnZnFe_(2)O_(4) nanorods are uniformly modified on the surface of rGO.The ZnZnFe_(2)O_(4)/rGO nanocomposite exhibits better SO_(2) gas sensing performance than the single ZnZnFe_(2)O_(4) nanorods at room temperature.The sensing characteristics of single ZnZnFe_(2)O_(4) film sensor,single rGO film sensor and ZnZnFe_(2)O_(4)/rGO composite film sensor at SO_(2)gas concentration(1×10^(-6)-100×10^(-6))were tested.The response of ZnZnFe_(2)O_(4)/rGO composite sensor can reach 18.32%at room temperature.Compared with single ZnZnFe_(2)O_(4) and rGO film sensors,the ZnZnFe_(2)O_(4)/rGO composite sensor has better transient response,good sensitivity and selectivity.In this work,the improvement of the sensor performance is not only due to the p-n heterostructure between ZnZnFe_(2)O_(4) nanorods and rGO nanosheets,but also to the excellent electrical properties of rGO.It provides a new idea for the detection of SO_(2) at room temperature.展开更多
We present a new substrate-free bimaterial cantilever array made of SiNx and Au for an uncooled microoptomechanical infrared imaging device. Each cantilever element has an optimized deformation magnification structure...We present a new substrate-free bimaterial cantilever array made of SiNx and Au for an uncooled microoptomechanical infrared imaging device. Each cantilever element has an optimized deformation magnification structure. A 160×160 array with a 120 μm×120μm pitch is fabricated and an optical readout is used to collectively measure deflections of all microcantilevers in the array. Thermal images of room-temperature objects with higher spatial resolution have been obtained and the noise-equivalent temperature difference of the fabricated focal plane arrays is given statistically and is measured to be about 270mK.展开更多
We demonstrate a type of 2 × 2 multimode interference 3 dB coupler based on silicon-on-insulator.The fabrication tolerance was investigated by the effective index method and the guide mode method.The devices with...We demonstrate a type of 2 × 2 multimode interference 3 dB coupler based on silicon-on-insulator.The fabrication tolerance was investigated by the effective index method and the guide mode method.The devices with different lengths were fabricated and near-field output images were obtained.Tolerances to width,length and etch depth are 2,200 and 2μm,respectively.The devices show a uniform power distribution.展开更多
Blue-green electroluminescence has been observed in free-standing diamond films which were deposited by microwave plasma assisted CVD on silicon substrates.The electroluminescence device is driven by a 60 Hz power sup...Blue-green electroluminescence has been observed in free-standing diamond films which were deposited by microwave plasma assisted CVD on silicon substrates.The electroluminescence device is driven by a 60 Hz power supply.The threshold voltage was about 112 V peak-to-peak.The electroluminescence spectrum at room temperature,showed a blue-green band with the peak centered at 485nm suggesting band A type emission.Electroluminescence was also observed at 77K.展开更多
This paper combines improved Hamming codes and parity codes to assure the reliability of memory in presence of multiple bit upsets with low cost overhead.The redundancy bits of improved Hamming codes will be appended ...This paper combines improved Hamming codes and parity codes to assure the reliability of memory in presence of multiple bit upsets with low cost overhead.The redundancy bits of improved Hamming codes will be appended at the end of data bits,which eliminates the overhead of interspersing the redundancy bits at the encoder and decoder.The reliability of memory is further enhanced by the layout architecture of redundancy bits and data bits.The proposed scheme has been implemented in Verilog and synthesized using the Synopsys tools.The results reveal that the proposed method has about 19% less area penalties and 13% less power consumption comparing with the current two-dimensional error codes,and its latency of encoder and decoder is 63% less than that of Hamming codes.展开更多
Blue electroluminescence of boron doped diamond thin film is reported.The boron doped diamond thin films were deposited by microwave plasma assisted chemical vapor deposition on silicon substrate.The electroluminescen...Blue electroluminescence of boron doped diamond thin film is reported.The boron doped diamond thin films were deposited by microwave plasma assisted chemical vapor deposition on silicon substrate.The electroluminescence device was driven by a frequency-modulated power supply.The optimum frequency is near 3 kHz.The dependence of electroluminescence intensity on boron impurity has been investigated.The intensity increases with increasing boron impurity.This is expected result according to“Band A”electroluminescence mechanism of donor-accepter pairs recombination.展开更多
This paper presents a study on thickness dependent physical properties of cadmium selenide thin films. The films of thickness 445, 631 and 810 nm were deposited employing thermal evaporation technique on glass and ITO...This paper presents a study on thickness dependent physical properties of cadmium selenide thin films. The films of thickness 445, 631 and 810 nm were deposited employing thermal evaporation technique on glass and ITO-coated glass substrates followed by thermal annealing in air atmosphere at 200 °C. These films were subjected to X-ray diffractometer, UV-Vis spectrophotometer, scanning electron microscopy（SEM） and electrometer for structural, optical,surface morphological and electrical analysis respectively. The structural analysis reveals that the films are nanocrystalline in nature with cubic phase and preferred orientation（111）. The crystallographic parameters such as lattice constant, interplanar spacing, grain size, internal strain, dislocation density, number of crystallites per unit area and texture coefficient are calculated and discussed. The optical band gap is found in the range 1.75-1.92 e V and observed to increase with thickness.The SEM study shows that the annealed films are uniform, fully covered and well defined. The electrical analysis shows that the conductivity is varied with film thickness and found within the order of semiconductor behavior.展开更多
A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed,...A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm ×100 μm device showed very high-dynamic range with decent gain and noise figure.展开更多
Analyzing the influence on Q factor, which was caused by the parasitic effect in a CMOS RF on chip integrated inductor, a concise method to increase the Q factor has been obtained when optimizing the layout parameter....Analyzing the influence on Q factor, which was caused by the parasitic effect in a CMOS RF on chip integrated inductor, a concise method to increase the Q factor has been obtained when optimizing the layout parameter. Using this method, the Q factor of 7.9 can be achieved in a 5nH inductor (operating frequency is 2GHz) while the errors in inductance are less than 0.5% compared with the aimed values. It is proved by experiments that this method can guarantee the sufficient accuracy but require less computation time. Therefore, it is of great use for the design of the inductor in CMOS RF IC’s.展开更多
The trend in the radio frequency IC toward further miniaturization and improved performance drives ongoing technology innovation of new substrate and packaging technologies.In this paper,Hardware technology of RF syst...The trend in the radio frequency IC toward further miniaturization and improved performance drives ongoing technology innovation of new substrate and packaging technologies.In this paper,Hardware technology of RF system was reviewed,and the low temperature cofired ceramics(LTCC) technology was stated to be the best choice.Material development and measurement of Dielectric properties of LTCC technology are introduced.The application of passive embedded component was stated for RFIC design.Design of LTCC library will be the next step for RF system design and simulation.展开更多
This paper introduces a video application-aware cross-layer framework for joint performance-energy optimization,considering the scenario of multiple users upstreaming real-time Motion JPEG2000 video streams to the acc...This paper introduces a video application-aware cross-layer framework for joint performance-energy optimization,considering the scenario of multiple users upstreaming real-time Motion JPEG2000 video streams to the access point of a WiFi wireless local area network and extends the PHY-MAC run-time cross-layer scheduling strategy that we introduced in (Mangharam et al., 2005; Pollin et al., 2005) to also consider congested network situations where video packets have to be dropped. We show that an optimal solution at PHY-MAC level can be highly suboptimal at application level, and then show that making the cross-layer framework application-aware through a prioritized dropping policy capitalizing on the inherent scalability of Motion JPEG2000 video streams leads to drastic average video quality improvements and inter-user quality variation reductions of as much as 10 dB PSNR, without affecting the overall energy consumption requirements.展开更多
The origin of the piezoelectric effect of GaAs is discussed in some detail.TheGa atoms are negatively charged and As atoms positively charged.The piezoelectric con-stant tensors for arbitrarily oriented GaAs have been...The origin of the piezoelectric effect of GaAs is discussed in some detail.TheGa atoms are negatively charged and As atoms positively charged.The piezoelectric con-stant tensors for arbitrarily oriented GaAs have been obtained.It is verified that for nor-mal stress when the GaAs samples are oriented in the 〈111〉 direction the maximumpiezoelectric effect occurs.As far as the piezoelectric properties and fabrication technologyare concerned,〈100〉 oriented GaAs substratcs are fit for the force sensors.展开更多
Low energy consumption is one of the main challenges for wireless video transmission on battery limited devices. The energy invested at the lower layers of the protocol stack involved in data communication, such as li...Low energy consumption is one of the main challenges for wireless video transmission on battery limited devices. The energy invested at the lower layers of the protocol stack involved in data communication, such as link and physical layer, represent an important part of the total energy consumption. This communication energy highly depends on the channel conditions and on the transmission data rate. Traditionally, video coding is unaware of varying channel conditions. In this paper, we propose a cross-layer approach in which the rate control mechanism of the video codec becomes channel-aware and steers the instantaneous output rate according to the channel conditions to reduce the communication energy. Our results show that energy savings of up to30% can be obtained with a reduction of barely 0.1 dB on the average video quality. The impact of feedback delays is shown to be small. In addition, this adaptive mechanism has low complexity, which makes it suitable for real-time applications.展开更多
Scheduling algorithm always plays an important role in the spatial architecture for the contradiction between the finite network bandwidth and the abundant execution resources. This article provides a simple method to...Scheduling algorithm always plays an important role in the spatial architecture for the contradiction between the finite network bandwidth and the abundant execution resources. This article provides a simple method to solve the contention for network resource in one of the spatial architecture, i.e. the tera-op, reliable, intelligently adaptive processing system(TRIPS) processor. The method improves the performance of network by increasing the bypass bandwidth which can transmit the data in the internal of every execution unit, and converting the proportion of remote communication by the deep scheduling algorithm. The deeply optimized algorithm is realized to verify the validity of the method, and the performance increase 9% for floating point spec2000 benchmark is got.展开更多
The influence of silicon slice flatness on bonding technology and the relation between a foreign particle and resulting bubble are quantitatively presented by the elastic theory. It is demonstrated experimentally by X...The influence of silicon slice flatness on bonding technology and the relation between a foreign particle and resulting bubble are quantitatively presented by the elastic theory. It is demonstrated experimentally by X-ray double crystal diffractometry and infrared imager.展开更多
文摘The radiation-sensitive field effect transistors(RADFET)radiation dosimeter is a type of radiation detector based on the total dose effects of the p-channel metal-oxide-semiconductor(PMOS)transistor.The RADFET chip was fabricated in United Microelectronics Center 8-inch process with a six-layer photomask.The chip including two identical PMOS transistors,occupies a size of 610μm×610μm.Each PMOS has a W/L ratio of 300μm/50μm,and a 400 nm thick gate oxide,which is formed by a dry-wet-dry oxygen process.The wet oxygen-formed gate oxide with more traps can capture more holes during irradiation,thus significantly changing the PMOS threshold voltage.Pre-irradiation measurement results from ten test chips show that the initial average voltage of the PMOS is 1.961 V with a dispersion of 5.7%.The irradiation experiment is conducted in a cobalt source facility with a dose rate of 50 rad(Si)/s.During irradiation,a constant current source circuit of 10μA was connected to monitoring the shift in threshold voltage under different total dose.When the total dose is 100 krad(Si),the shift in threshold voltage was approximately 1.37 V,which demonstrates that an excellent radiation function was achieved.
基金supported by the Fundamental Research Funds for the Central Universities(No.HIT.KISTP.201404)Harbin science and innovation research special fund(No.2015RAXXJ003)Special fund for development of Shenzhen strategic emerging industries(No.JCYJ20150625142543456)
文摘Heavy ion-induced single event upsets(SEUs)of static random access memory(SRAM), integrated with three-dimensional integrated circuit technology, are evaluated using a Monte Carlo simulation method based on the Geant4 simulation toolkit. The SEU cross sections and multiple cell upset(MCU) susceptibility of 3D SRAM are explored using different types and energies of heavy ions.In the simulations, the sensitivities of different dies of 3D SRAM show noticeable discrepancies for low linear energy transfers(LETs). The average percentage of MCUs of 3D SRAM increases from 17.2 to 32.95%, followed by the energy of ^(209)Bi decreasing from 71.77 to 38.28 MeV/u. For a specific LET, the percentage of MCUs presents a notable difference between the face-to-face and back-toface structures. In the back-to-face structure, the percentage of MCUs increases with a deeper die, compared with the face-to-face structure. The simulation method and process are verified by comparing the SEU cross sections of planar SRAM with experimental data. The upset cross sections of the planar process and 3D integrated SRAM are analyzed. The results demonstrate that the 3D SRAM sensitivity is not greater than that of the planar SRAM. The 3D process technology has the potential to be applied to the aerospace and military fields.
基金This work was supported by the National Key Research and Development Program of China(No.2018YFA0704400).
文摘As Moore’s law approaching its end,electronics is hitting its power,bandwidth,and capacity limits.Photonics is able to overcome the performance limits of electronics but lacks practical photonic register and flexible control.Combining electronics and photonics provides the best of both worlds and is widely regarded as an important post-Moore’s direction.For stability and dynamic operations considerations,feedback tuning of photonic devices is required.For silicon photonics,the thermooptic effect is the most frequently used tuning mechanism due to the advantages of high efficiency and low loss.However,it brings new design requirements,creating new design challenges.Emerging applications,such as optical phased array,optical switches,and optical neural networks,employ a large number of photonic devices,making PCB tuning solutions no longer suitable.Electronic-photonic-converged solutions with compact footprints will play an important role in system scalability.In this paper,we present a unified model for thermo-optic feedback tuning that can be specialized to different applications,review its recent advances,and discuss its future trends.
文摘In this paper,ZnZnFe_(2)O_(4) nanorods were prepared using Zn/Fe metal organic framework(MOF)as precursors,and ZnZnFe_(2)O_(4)/reduced graphene oxide(rGO)was prepared by hydrothermal method.The morphology and composition of the ZnZnFe_(2)O_(4)/rGO nanocomposite were characterized,and the results showed that the MOF-derived ZnZnFe_(2)O_(4) nanorods are uniformly modified on the surface of rGO.The ZnZnFe_(2)O_(4)/rGO nanocomposite exhibits better SO_(2) gas sensing performance than the single ZnZnFe_(2)O_(4) nanorods at room temperature.The sensing characteristics of single ZnZnFe_(2)O_(4) film sensor,single rGO film sensor and ZnZnFe_(2)O_(4)/rGO composite film sensor at SO_(2)gas concentration(1×10^(-6)-100×10^(-6))were tested.The response of ZnZnFe_(2)O_(4)/rGO composite sensor can reach 18.32%at room temperature.Compared with single ZnZnFe_(2)O_(4) and rGO film sensors,the ZnZnFe_(2)O_(4)/rGO composite sensor has better transient response,good sensitivity and selectivity.In this work,the improvement of the sensor performance is not only due to the p-n heterostructure between ZnZnFe_(2)O_(4) nanorods and rGO nanosheets,but also to the excellent electrical properties of rGO.It provides a new idea for the detection of SO_(2) at room temperature.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10472111, 10732080 and 10627201, and the National Basic Research Programme of China under Grant No 2006CB300404.
文摘We present a new substrate-free bimaterial cantilever array made of SiNx and Au for an uncooled microoptomechanical infrared imaging device. Each cantilever element has an optimized deformation magnification structure. A 160×160 array with a 120 μm×120μm pitch is fabricated and an optical readout is used to collectively measure deflections of all microcantilevers in the array. Thermal images of room-temperature objects with higher spatial resolution have been obtained and the noise-equivalent temperature difference of the fabricated focal plane arrays is given statistically and is measured to be about 270mK.
基金Supported by the National Natural Science Foundation of China under Grant Nos.69896260 and 69990540。
文摘We demonstrate a type of 2 × 2 multimode interference 3 dB coupler based on silicon-on-insulator.The fabrication tolerance was investigated by the effective index method and the guide mode method.The devices with different lengths were fabricated and near-field output images were obtained.Tolerances to width,length and etch depth are 2,200 and 2μm,respectively.The devices show a uniform power distribution.
基金the National Natural Science Foundation of China,and the Natural Science Foundation of He'nan province.
文摘Blue-green electroluminescence has been observed in free-standing diamond films which were deposited by microwave plasma assisted CVD on silicon substrates.The electroluminescence device is driven by a 60 Hz power supply.The threshold voltage was about 112 V peak-to-peak.The electroluminescence spectrum at room temperature,showed a blue-green band with the peak centered at 485nm suggesting band A type emission.Electroluminescence was also observed at 77K.
基金Sponsored by the Opening Project of National Key Laboratory of Science and Technology on Reliability PhysicsApplication Technology of Electrical Component(Grant No.ZHD200903)
文摘This paper combines improved Hamming codes and parity codes to assure the reliability of memory in presence of multiple bit upsets with low cost overhead.The redundancy bits of improved Hamming codes will be appended at the end of data bits,which eliminates the overhead of interspersing the redundancy bits at the encoder and decoder.The reliability of memory is further enhanced by the layout architecture of redundancy bits and data bits.The proposed scheme has been implemented in Verilog and synthesized using the Synopsys tools.The results reveal that the proposed method has about 19% less area penalties and 13% less power consumption comparing with the current two-dimensional error codes,and its latency of encoder and decoder is 63% less than that of Hamming codes.
基金Supported by the National Natural Science Foundation of Chinathe Natural Science。
文摘Blue electroluminescence of boron doped diamond thin film is reported.The boron doped diamond thin films were deposited by microwave plasma assisted chemical vapor deposition on silicon substrate.The electroluminescence device was driven by a frequency-modulated power supply.The optimum frequency is near 3 kHz.The dependence of electroluminescence intensity on boron impurity has been investigated.The intensity increases with increasing boron impurity.This is expected result according to“Band A”electroluminescence mechanism of donor-accepter pairs recombination.
基金financial support under UGC-BSR fellowship No.F.25-1/2013-14(BSR)/7-123/2007(BSR)
文摘This paper presents a study on thickness dependent physical properties of cadmium selenide thin films. The films of thickness 445, 631 and 810 nm were deposited employing thermal evaporation technique on glass and ITO-coated glass substrates followed by thermal annealing in air atmosphere at 200 °C. These films were subjected to X-ray diffractometer, UV-Vis spectrophotometer, scanning electron microscopy（SEM） and electrometer for structural, optical,surface morphological and electrical analysis respectively. The structural analysis reveals that the films are nanocrystalline in nature with cubic phase and preferred orientation（111）. The crystallographic parameters such as lattice constant, interplanar spacing, grain size, internal strain, dislocation density, number of crystallites per unit area and texture coefficient are calculated and discussed. The optical band gap is found in the range 1.75-1.92 e V and observed to increase with thickness.The SEM study shows that the annealed films are uniform, fully covered and well defined. The electrical analysis shows that the conductivity is varied with film thickness and found within the order of semiconductor behavior.
基金Project supported by the National Natural Science Foundation of China （Grant No 60476035）.
文摘A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm ×100 μm device showed very high-dynamic range with decent gain and noise figure.
文摘Analyzing the influence on Q factor, which was caused by the parasitic effect in a CMOS RF on chip integrated inductor, a concise method to increase the Q factor has been obtained when optimizing the layout parameter. Using this method, the Q factor of 7.9 can be achieved in a 5nH inductor (operating frequency is 2GHz) while the errors in inductance are less than 0.5% compared with the aimed values. It is proved by experiments that this method can guarantee the sufficient accuracy but require less computation time. Therefore, it is of great use for the design of the inductor in CMOS RF IC’s.
基金Acknowledgments This work is supported by the open research fund of Key Laboratory of MEMS of Ministry of Education, Southeast University, Natural Science Foundation of China （No.60876078）.
文摘The trend in the radio frequency IC toward further miniaturization and improved performance drives ongoing technology innovation of new substrate and packaging technologies.In this paper,Hardware technology of RF system was reviewed,and the low temperature cofired ceramics(LTCC) technology was stated to be the best choice.Material development and measurement of Dielectric properties of LTCC technology are introduced.The application of passive embedded component was stated for RFIC design.Design of LTCC library will be the next step for RF system design and simulation.
文摘This paper introduces a video application-aware cross-layer framework for joint performance-energy optimization,considering the scenario of multiple users upstreaming real-time Motion JPEG2000 video streams to the access point of a WiFi wireless local area network and extends the PHY-MAC run-time cross-layer scheduling strategy that we introduced in (Mangharam et al., 2005; Pollin et al., 2005) to also consider congested network situations where video packets have to be dropped. We show that an optimal solution at PHY-MAC level can be highly suboptimal at application level, and then show that making the cross-layer framework application-aware through a prioritized dropping policy capitalizing on the inherent scalability of Motion JPEG2000 video streams leads to drastic average video quality improvements and inter-user quality variation reductions of as much as 10 dB PSNR, without affecting the overall energy consumption requirements.
文摘The origin of the piezoelectric effect of GaAs is discussed in some detail.TheGa atoms are negatively charged and As atoms positively charged.The piezoelectric con-stant tensors for arbitrarily oriented GaAs have been obtained.It is verified that for nor-mal stress when the GaAs samples are oriented in the 〈111〉 direction the maximumpiezoelectric effect occurs.As far as the piezoelectric properties and fabrication technologyare concerned,〈100〉 oriented GaAs substratcs are fit for the force sensors.
基金Project (No. IST-2004-004042) supported by European Project BETSY (BEing on Time Saves energY)
文摘Low energy consumption is one of the main challenges for wireless video transmission on battery limited devices. The energy invested at the lower layers of the protocol stack involved in data communication, such as link and physical layer, represent an important part of the total energy consumption. This communication energy highly depends on the channel conditions and on the transmission data rate. Traditionally, video coding is unaware of varying channel conditions. In this paper, we propose a cross-layer approach in which the rate control mechanism of the video codec becomes channel-aware and steers the instantaneous output rate according to the channel conditions to reduce the communication energy. Our results show that energy savings of up to30% can be obtained with a reduction of barely 0.1 dB on the average video quality. The impact of feedback delays is shown to be small. In addition, this adaptive mechanism has low complexity, which makes it suitable for real-time applications.
文摘Scheduling algorithm always plays an important role in the spatial architecture for the contradiction between the finite network bandwidth and the abundant execution resources. This article provides a simple method to solve the contention for network resource in one of the spatial architecture, i.e. the tera-op, reliable, intelligently adaptive processing system(TRIPS) processor. The method improves the performance of network by increasing the bypass bandwidth which can transmit the data in the internal of every execution unit, and converting the proportion of remote communication by the deep scheduling algorithm. The deeply optimized algorithm is realized to verify the validity of the method, and the performance increase 9% for floating point spec2000 benchmark is got.
文摘The influence of silicon slice flatness on bonding technology and the relation between a foreign particle and resulting bubble are quantitatively presented by the elastic theory. It is demonstrated experimentally by X-ray double crystal diffractometry and infrared imager.
