Over 70 years have passed since the first transistor was invented at Bell Labs,New Jersey,USA on 16 December 1947 by William Shockley,John Bardeen and Walter Brattain,which was perhaps the most important electronics e...Over 70 years have passed since the first transistor was invented at Bell Labs,New Jersey,USA on 16 December 1947 by William Shockley,John Bardeen and Walter Brattain,which was perhaps the most important electronics event of the 20th century as it later made possible the integrated circuit(IC)and microprocessor that are the basis of modern electronics.The first electronic products were made from individual transistors but before long engineers learnt how to integrate several simultaneously,giving birth to the first IC in 1957.Industry development thereafter followed a predominantly evolutionary process with the number of transistors on an IC increasing exponentially each year,a process known as Moore’s Law after one of the semiconductor industry’s key founding fathers.展开更多
The single-event susceptibility of three silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET)power devices structures(planar,trench and double trench)is researched by the technology computer-a...The single-event susceptibility of three silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET)power devices structures(planar,trench and double trench)is researched by the technology computer-aided design(TCAD)simulation.Comparative analysis of the heavy-ion irradiation effects on three device structures reveals distinct susceptibility characteristics.The gate oxide region is identified as the most sensitive position in planar devices,while trench and doubletrench structures exhibit no localized sensitive regions.Furthermore,the single-event susceptibility demonstrates strong depth dependence across all three structures,with enhanced vulnerability observed at greater ion penetration depths.展开更多
In this paper,we present a circuit model of single-quantum-well InGaN/GaN light-emitting diodes based on the standard rate equations.Two rate equations describe carrier transport processes occurring in sep-arate confi...In this paper,we present a circuit model of single-quantum-well InGaN/GaN light-emitting diodes based on the standard rate equations.Two rate equations describe carrier transport processes occurring in sep-arate confinement heterostructure and quantum well respectively,and the third equation describes the varied photons in quantum well.By using the presented model,impacts of quantum well thickness on the static and dynamic performances are investigated.Simulated results show that LED with 4 nm well exhibits better lightcurrent(L-I)performance,but LED with 3 nm well presents wider 3 dB modulation bandwidth.It reveals that high carrier density in quantum well is detrimental to the static performance,but beneficial to the dynamic performance.展开更多
Metal halides have attracted worldwide attention as exceptional optoelectronic materials.Over the past decade,research on metal halides has yielded remarkable progress,and their color-conversion applications have show...Metal halides have attracted worldwide attention as exceptional optoelectronic materials.Over the past decade,research on metal halides has yielded remarkable progress,and their color-conversion applications have shown considerable promise for commercialization.With the reporting of self-trapped exciton(STE)emission in perovskites,the application of metal halides as broadband emitting materials in the lighting field has gained increas-ing interest.Herein,we provide a comprehensive review of metal halide STE emitters,especially for lighting applications.We begin with highlighting the ideal spectral characteristics and corresponding performance metrics for lighting.This is followed by a systematic summary of the mechanisms,optimization strategies,and recent advances of STE emission in metal halides.Finally,we outline the major challenges and prospective trends for metal halide STE emitters.This review aims to offer valuable insights into metal halide STE emitters and their lighting applications for facilitating the future commercialization.展开更多
In this paper,we present a broadband,high-extinction-ratio,nonvolatile 2×2 Mach-Zehnder interfer⁃ometer(MZI)optical switch based on the phase change material Sb_(2)Se_(3).The insertion loss(IL)is 0.84 dB and the ...In this paper,we present a broadband,high-extinction-ratio,nonvolatile 2×2 Mach-Zehnder interfer⁃ometer(MZI)optical switch based on the phase change material Sb_(2)Se_(3).The insertion loss(IL)is 0.84 dB and the extinction ratio(ER)reaches 28.8 dB at the wavelength of 1550 nm.The 3 dB bandwidth is greater than 150 nm.Within the 3 dB bandwidth,the ER is greater than 20.3 dB and 16.3 dB at bar and cross states,respectively.The power consumption for crystallization and amorphization of Sb_(2)Se_(3) is 105.86 nJ and 49 nJ,respectively.The switch holds significant promise for optical interconnects and optical computing applications.展开更多
Vision Transformers(ViTs)have achieved remarkable success across various artificial intelligence-based computer vision applications.However,their demanding computational and memory requirements pose significant challe...Vision Transformers(ViTs)have achieved remarkable success across various artificial intelligence-based computer vision applications.However,their demanding computational and memory requirements pose significant challenges for de-ployment on resource-constrained edge devices.Although post-training quantization(PTQ)provides a promising solution by reducing model precision with minimal calibration data,aggressive low-bit quantization typically leads to substantial perfor-mance degradation.To address this challenge,we present the truncated uniform-log2 quantizer and progressive bit-decline reconstruction method for vision Transformer quantization(TP-ViT).It is an innovative PTQ framework specifically designed for ViTs,featuring two key technical contributions:(1)truncated uniform-log2 quantizer,a novel quantization approach which effectively handles outlier values in post-Softmax activations,significantly reducing quantization errors;(2)bit-decline optimiza-tion strategy,which employs transition weights to gradually reduce bit precision while maintaining model performance under extreme quantization conditions.Comprehensive experiments on image classification,object detection,and instance segmenta-tion tasks demonstrate TP-ViT’s superior performance compared to state-of-the-art PTQ methods,particularly in challenging 3-bit quantization scenarios.Our framework achieves a notable 6.18 percentage points improvement in top-1 accuracy for ViT-small under 3-bit quantization.These results validate TP-ViT’s robustness and general applicability,paving the way for more efficient deployment of ViT models in computer vision applications on edge hardware.展开更多
Memristors have emerged as a transformative technology in the realm of electronic devices,offering unique advantages such as fast switching speeds,low power consumption,and the ability to sensor-memory-compute.The app...Memristors have emerged as a transformative technology in the realm of electronic devices,offering unique advantages such as fast switching speeds,low power consumption,and the ability to sensor-memory-compute.The applications span across non-volatile memory,neuromorphic computing,hardware security,and beyond,prompting memristors to become a versatile solution for next-generation computing and data storage systems.Despite enormous potential of memristors,the transition from laboratory prototypes to large-scale applications is challenging in terms of material stability,device reproducibility,and array scalability.This review systematically explores recent advancements in high-performance memristor technologies,focusing on performance enhancement strategies through material engineering,structural design,pulse protocol optimization,and algorithm control.We provide an in-depth analysis of key performance metrics tailored to specific applications,including non-volatile memory,neuromorphic computing,and hardware security.Furthermore,we propose a co-design framework that integrates device-level optimizations with operational-level improvements,aiming to bridge the gap between theoretical models and practical implementations.展开更多
Solar-blind ultraviolet photodetectors(UV PDs),capable of detecting UV radiation without interference from sun-light,have attracted significant interest.Herein,we propose a 0D/1D heterostructure for UV PDs,which was f...Solar-blind ultraviolet photodetectors(UV PDs),capable of detecting UV radiation without interference from sun-light,have attracted significant interest.Herein,we propose a 0D/1D heterostructure for UV PDs,which was fabricated by spin-coating MoS_(2)quantum dots onto p-AlGaN nanowires.The device achieves a high responsivity of 175.5 mA/W and a fast response speed of 83 ms at 250 nm illumination under self-powered mode,which improved nearly 1235%and 521%after MoS_(2)decoration,respectively.These improvements can be attributed to the type-Ⅱheterostructure formed between p-AlGaN and MoS_(2),which facilitates enhanced charge separation and carrier transport.Later,we demonstrate the implementation of this device in optical communication,achieving high-accuracy transmission of"GaN"ASCII code signals.Such a 0D/1D het-erostructure provides an effective strategy for high-performance solar-blind UV PD.展开更多
In this article,a graphic design method for broadband Doherty power amplifier(DPA) is proposed based on the basic principle of impedance matching with the help of Smith chart.The proposed graphic method avoids the com...In this article,a graphic design method for broadband Doherty power amplifier(DPA) is proposed based on the basic principle of impedance matching with the help of Smith chart.The proposed graphic method avoids the complex formula derivation in the traditional amplifier circuit design process,and the design process is more simple and intuitive.Besides,it only takes three steps to build the load modulation network(LMN) of two power amplifiers(PA) of the DPA.Besides,a capacitor is used to replace the parasitic parameters of the transistor,and the LMN designed in the two modes is used for exploration and comparison.Further more,the output impedance of the peaking PA is introduced to make the reflection coefficient trajectory on Smith chart lowfrequency dispersion so as to expand the bandwidth of the DPA at the output power back-off(OBO) level.It would not affect the performance of DPA in the saturation(SAT) state.In this way,a broadband DPA can be implemented easily.To validate the proposed design method,a broadband DPA operating from 1.9to 2.6 GHz is designed and measured based on the proposed method.Under the continuous-wave excitation,the fabricated DPA has a 6 dB OBO efficiency of 48%-56% and a SAT efficiency of 64%-73% from 1.75 to 2.45 GHz,and the peak output power is 48.9-49.8 dBm.展开更多
Soft X-ray detectors play a vital role in materials science,high-energy physics and medical imaging.Cs_(2)AgBiBr_(6),a lead-free double perovskite,has gained attention for its excellent optoelectronic properties,stabi...Soft X-ray detectors play a vital role in materials science,high-energy physics and medical imaging.Cs_(2)AgBiBr_(6),a lead-free double perovskite,has gained attention for its excellent optoelectronic properties,stability,and nontoxicity.However,its fast crystallization and requirement for high-temperature annealing(>250℃)often lead to inferior film quality,limiting its application in flexible devices.This study introduces an alloying strategy that significantly improves the quality of Cs_(2)AgBiBr_(6)thin films annealed at a reduced temperature of 150℃.Devices based on the alloyed thin films exhibit an ultra-low dark current of 0.32 nA·cm^(-2)and a quantum efficiency of 725%.Furthermore,the first successful integration of Cs_(2)AgBiBr_(6)with a thinfilm transistor backplane demonstrates its superior imaging performance,indicating that Cs_(2)AgBiBr_(6)is a promising material for next-generation soft X-ray sensors.展开更多
Recommendation systems are key to boosting user engagement,satisfaction,and retention,particularly on media platforms where personalized content is vital.Sequential recommendation systems learn from user-item interact...Recommendation systems are key to boosting user engagement,satisfaction,and retention,particularly on media platforms where personalized content is vital.Sequential recommendation systems learn from user-item interactions to predict future items of interest.However,many current methods rely on unique user and item IDs,limiting their ability to represent users and items effectively,especially in zero-shot learning scenarios where training data is scarce.With the rapid development of Large Language Models(LLMs),researchers are exploring their potential to enhance recommendation systems.However,there is a semantic gap between the linguistic semantics of LLMs and the collaborative semantics of recommendation systems,where items are typically indexed by IDs.Moreover,most research focuses on item representations,neglecting personalized user modeling.To address these issues,we propose a sequential recommendation framework using LLMs,called CIT-Rec,a model that integrates Collaborative semantics for user representation and Image and Text information for item representation to enhance Recommendations.Specifically,by aligning intuitive image information with text containing semantic features,we can more accurately represent items,improving item representation quality.We focus not only on item representations but also on user representations.To more precisely capture users’personalized preferences,we use traditional sequential recommendation models to train on users’historical interaction data,effectively capturing behavioral patterns.Finally,by combining LLMs and traditional sequential recommendation models,we allow the LLM to understand linguistic semantics while capturing collaborative semantics.Extensive evaluations on real-world datasets show that our model outperforms baseline methods,effectively combining user interaction history with item visual and textual modalities to provide personalized recommendations.展开更多
To address the challenges of complexity,power consumption,and cost constraints in traditional display driver integrated circuits(DDICs)caused by external NOR Flash and SRAM,this work proposes an embedded resistive ran...To address the challenges of complexity,power consumption,and cost constraints in traditional display driver integrated circuits(DDICs)caused by external NOR Flash and SRAM,this work proposes an embedded resistive random-access memory(RRAM)integration solution based on a 40 nm high-voltage CMOS logic platform.Targeting the yield fluctuations and stability challenges during RRAM mass production,systematic process optimizations are implemented to achieve synergistic improvements in RRAM performance and yield.Through modifications to the film sputtering and pre-deposition treatment,the withinwafer resistance uniformity(RSU)of the oxygen-deficient layer(ODL)thin film is improved from 11%to 8%,while inter-wafer process stability variation reduces from 23%to below 6%.Consequently,the yield of 8 Mb RRAM embedded mass production products increases from 87%to 98.5%.In terms of device performance,the RRAM demonstrates a fast 4.8 ns read speed,exceptional read disturb immunity of 3×10^(8) cycles at 95℃,10^(3) write/erase endurance cycles for the 1 Mb cells,and data retention of 12.5 years at 125℃.Post high-temperature operating life(HTOL)testing exhibits stable high/low resistance window.This study provides process optimization strategies and a reliability assurance framework for the mass production of highly integrated,low-power embedded RRAM display driver IC.展开更多
Surface electromyogram(sEMG)signals are valuable in healthcare and human-machine interaction.However,s EMG signals are inherently weak and unstable bioelectrical signals,rendering them highly susceptible to perturbati...Surface electromyogram(sEMG)signals are valuable in healthcare and human-machine interaction.However,s EMG signals are inherently weak and unstable bioelectrical signals,rendering them highly susceptible to perturbations from various external factors.In this work,we firstly proposed utilizing the industrially producible Gen-4.5 heterogeneous integration technology to design an active 16-channel microelectrode array(MEA)based on amorphous indium-gallium-zinc oxide thin-film transistors(a-IGZO TFTs)capable of capturing and decoding sEMG signals.The a-IGZO TFTs demonstrate exceptional stability under bias(±20 V),temperature(200℃),and bending(6 mm,30000 cycles),with a threshold voltage shift of less than 0.1 V and a standard deviation under 0.07 V for 100 randomly selected devices.Our state-of-the-art 16-channel active MEAs can collect sEMG signals from various hand gestures and analysis of motor unit action potential trains,expanding possibilities for human-machine interaction and electronic healthcare applications.The signal-to-noise ratio of sEMG signals reaches 85 dB,enabling a high average hand gesture recognition accuracy of 96.2%.This work highlights the potential of the scalable sEMG arrays with exceptional stability for multi-channel sEMG signal acquisition,representing a significant advancement in wearable health monitoring and interactive systems.展开更多
All-optically controlled artificial synapses for neuromorphic vision offer unique advantages in simplifying circuit design and minimizing power consumption,meeting the application demands of the current artificial int...All-optically controlled artificial synapses for neuromorphic vision offer unique advantages in simplifying circuit design and minimizing power consumption,meeting the application demands of the current artificial intelligence era.However,developing all-optically controlled devices that combine high performance and high reproducibility remains a significant challenge.In this work,we demonstrate an all-optically controlled artificial synapse based on ZnO and Cs_(2)CoCl_(4)single crystal connected structure,which integrates light information sensing and processing capabilities.Relying on the simple series-connected structure,as well as the positive photoconductance of ZnO and the negative photoconductance of Cs_(2)CoCl_(4),the optically controlled bidirectional synaptic plasticity is realized under ultraviolet and visible light stimulation without additional voltage modulation in the all-optically controlled synapse.In addition,leveraging its ultraviolet-enhanced feature extraction and visible-suppression capabilities,the all-optically controlled synapse can act as denoising units in bioinformation preprocessing and weight-updating units in feature recognition.The proposed all-optically controlled synapses exhibit excellent information perception,low-level noise reduction,and high-level cognition functions for bioinformation recognition under complex light conditions.We believe that this work can provide structural-level insights and inspirations in the design and fabrication of all-optically controlled synapses to promote the application for efficient neuromorphic vision in the future.展开更多
Owing to superior breakdown voltage and excellent robustness,the betagallium oxide(β-Ga_(2)O_(3))power device has emerged as a pivotal research frontier in power electronics.Although advanced packaging strategies,inc...Owing to superior breakdown voltage and excellent robustness,the betagallium oxide(β-Ga_(2)O_(3))power device has emerged as a pivotal research frontier in power electronics.Although advanced packaging strategies,including nanosilver paste sintering,alumina direct bond copper(DBC)substrates,and flipchip structures,have been adopted to mitigate the intrinsic low thermal conductivity ofβ-Ga_(2)O_(3).However,a further reduction in the thermal resistance while maintaining high reliability remains a challenge.This study introduces a novel packaging methodology that synergistically integrates nano-silver films with aluminum nitride active metal brazing(AMB-AlN)substrates,achieving an ultra-low junction-to-case thermal resistance.By comprehensive reliability assessments onβ-Ga_(2)O_(3) Schottky barrier diodes(SBDs)and hetero-junction diodes(HJDs),the results demonstrate that the SBDs and HJDs exhibit surge current densities of 0.876 kA/cm^(2) and 0.778 kA/cm^(2),respectively,which represents a significant advancement in device performance benchmarks.These advancements provide critical insights into packaging design for highreliability ultrawide bandgap semiconductor systems.展开更多
High-entropy materials(HEMs)have attracted considerable research attention in battery applications due to exceptional properties such as remarkable structural stability,enhanced ionic conductivity,superior mechanical ...High-entropy materials(HEMs)have attracted considerable research attention in battery applications due to exceptional properties such as remarkable structural stability,enhanced ionic conductivity,superior mechanical strength,and outstanding catalytic activity.These distinctive characteristics render HEMs highly suitable for various battery components,such as electrodes,electrolytes,and catalysts.This review systematically examines recent advances in the application of HEMs for energy storage,beginning with fundamental concepts,historical development,and key definitions.Three principal categories of HEMs,namely high-entropy alloys,high-entropy oxides,and highentropy MXenes,are analyzed with a focus on electrochemical performance metrics such as specific capacity,energy density,cycling stability,and rate capability.The underlying mechanisms by which these materials enhance battery performance are elucidated in the discussion.Furthermore,the pivotal role of machine learning in accelerating the discovery and optimization of novel high-entropy battery materials is highlighted.The review concludes by outlining future research directions and potential breakthroughs in HEM-based battery technologies.展开更多
The output voltages for the capacitive elements of a neural circuit model can be mapped into dimensionless capacitive variables,which present firing patterns similar to the membrane potentials detected in biological n...The output voltages for the capacitive elements of a neural circuit model can be mapped into dimensionless capacitive variables,which present firing patterns similar to the membrane potentials detected in biological neurons.The inclusion of a memcapacitor also en‐ables consideration of membrane deformation effects,enhancing the model’s capacity to simulate neuronal behavior across varying physio‐logical and environmental conditions.In this study,a capacitor and a memcapacitor are connected through a linear resistor in parallel with other electric components in different branch circuits composed of an inductor and a nonlinear resistor.The electrical activities in a neuron with a double-layer membrane and two capacitive variables are discussed in detail after converting the nonlinear equations for the neural circuit into a theoretical neuron model.A dimensionless neuron model and its corresponding energy function are derived.The field energy function for the neural circuit is converted into an equivalent Hamilton energy function and further validated via the Helmholtz theorem.Furthermore,the average value of energy serves as an indicator for predicting stochastic resonance,as supported by analyzing the distribu‐tion of the coefficient of variation.The neuronal firing patterns are shown to be energy-dependent.An adaptive control strategy is proposed to regulate mode transitions in electrical activities of the neuron.An analog equivalent circuit is constructed to experimentally verify the nu‐merical results,thereby supporting the reliability of the proposed neuron model.展开更多
Two-dimensional(2D)multilayer kagome materials hold significant research value for regulating kagome-related physical properties and exploring quantum effects.However,their development is hindered by the scarcity of a...Two-dimensional(2D)multilayer kagome materials hold significant research value for regulating kagome-related physical properties and exploring quantum effects.However,their development is hindered by the scarcity of available material systems,making the identification of novel 2D multilayer kagome candidates particularly important.In this work,three types of 2D materials with trilayer kagome lattices,namely Sc_(6)S_(5)X_(6)(X=Cl,Br,I),are predicted based on first-principles calculations.These 2D materials feature two kagome lattices composed of Sc atoms and one kagome lattice composed of S atoms.Stability analysis indicates that these materials can exist as free-standing 2D materials.Electronic structure calculations reveal that Sc_(6)S_(5)X_(6)are narrow-bandgap semiconductors(0.76–0.95 e V),with their band structures exhibiting flat bands contributed by Sc-based kagome lattices and Dirac band gaps resulting from symmetry breaking.The sulfur-based kagome lattice in the central layer contributes an independent flat band below the Fermi level.Additionally,Sc_(6)S_(5)X_(6)exhibit high carrier mobility,with hole and electron mobilities reaching up to 10^(3)cm^(2)·V^(-1)·s^(-1),indicating potential applications in low-dimensional electronic devices.This work provides an excellent example for the development of novel multilayer 2D kagome materials.展开更多
Human action recognition(HAR)is crucial for the development of efficient computer vision,where bioinspired neuromorphic perception visual systems have emerged as a vital solution to address transmission bottlenecks ac...Human action recognition(HAR)is crucial for the development of efficient computer vision,where bioinspired neuromorphic perception visual systems have emerged as a vital solution to address transmission bottlenecks across sensor-processor interfaces.However,the absence of interactions among versatile biomimicking functionalities within a single device,which was developed for specific vision tasks,restricts the computational capacity,practicality,and scalability of in-sensor vision computing.Here,we propose a bioinspired vision sensor composed of a Ga N/Al N-based ultrathin quantum-disks-in-nanowires(QD-NWs)array to mimic not only Parvo cells for high-contrast vision and Magno cells for dynamic vision in the human retina but also the synergistic activity between the two cells for in-sensor vision computing.By simply tuning the applied bias voltage on each QD-NW-array-based pixel,we achieve two biosimilar photoresponse characteristics with slow and fast reactions to light stimuli that enhance the in-sensor image quality and HAR efficiency,respectively.Strikingly,the interplay and synergistic interaction of the two photoresponse modes within a single device markedly increased the HAR recognition accuracy from 51.4%to 81.4%owing to the integrated artificial vision system.The demonstration of an intelligent vision sensor offers a promising device platform for the development of highly efficient HAR systems and future smart optoelectronics.展开更多
This study presents aβ-Ga_(2)O_(3)diode featuring a Fin-channel structure and an anode ohmic contact.The device turnoff is facilitated by the depletion effect induced by the work function difference between the sidew...This study presents aβ-Ga_(2)O_(3)diode featuring a Fin-channel structure and an anode ohmic contact.The device turnoff is facilitated by the depletion effect induced by the work function difference between the sidewall metal andβ-Ga_(2)O_(3).As the forward bias increases,electron accumulation occurs on the Fin-channel sidewalls,reducing the on-resistance and improving the forward characteristics.Moreover,the device exhibits the reduced surface field(RESURF)effect,similar to trench schottky barrier diodes(SBDs),which shifts the electric field at the fin corners and enhances the breakdown voltage.For a device with a 100 nm fin width(W_(fin)),we achieved a breakdown voltage(BV)of 1137 V,a specific on-resistance(R_(on,sp))of 1.8 mΩ·cm^(2),and a power figure of merit(PFOM)of 0.72 GW/cm^(2).This work expands the fabrication approach forβ-Ga_(2)O_(3)-based devices,advancing their potential for high-performance applications.展开更多
文摘Over 70 years have passed since the first transistor was invented at Bell Labs,New Jersey,USA on 16 December 1947 by William Shockley,John Bardeen and Walter Brattain,which was perhaps the most important electronics event of the 20th century as it later made possible the integrated circuit(IC)and microprocessor that are the basis of modern electronics.The first electronic products were made from individual transistors but before long engineers learnt how to integrate several simultaneously,giving birth to the first IC in 1957.Industry development thereafter followed a predominantly evolutionary process with the number of transistors on an IC increasing exponentially each year,a process known as Moore’s Law after one of the semiconductor industry’s key founding fathers.
基金National Key Research and Development Program of China(2023YFA1609000)National Natural Science Foundation of China(62474190,U22B2043,U2267210)。
文摘The single-event susceptibility of three silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET)power devices structures(planar,trench and double trench)is researched by the technology computer-aided design(TCAD)simulation.Comparative analysis of the heavy-ion irradiation effects on three device structures reveals distinct susceptibility characteristics.The gate oxide region is identified as the most sensitive position in planar devices,while trench and doubletrench structures exhibit no localized sensitive regions.Furthermore,the single-event susceptibility demonstrates strong depth dependence across all three structures,with enhanced vulnerability observed at greater ion penetration depths.
文摘In this paper,we present a circuit model of single-quantum-well InGaN/GaN light-emitting diodes based on the standard rate equations.Two rate equations describe carrier transport processes occurring in sep-arate confinement heterostructure and quantum well respectively,and the third equation describes the varied photons in quantum well.By using the presented model,impacts of quantum well thickness on the static and dynamic performances are investigated.Simulated results show that LED with 4 nm well exhibits better lightcurrent(L-I)performance,but LED with 3 nm well presents wider 3 dB modulation bandwidth.It reveals that high carrier density in quantum well is detrimental to the static performance,but beneficial to the dynamic performance.
文摘Metal halides have attracted worldwide attention as exceptional optoelectronic materials.Over the past decade,research on metal halides has yielded remarkable progress,and their color-conversion applications have shown considerable promise for commercialization.With the reporting of self-trapped exciton(STE)emission in perovskites,the application of metal halides as broadband emitting materials in the lighting field has gained increas-ing interest.Herein,we provide a comprehensive review of metal halide STE emitters,especially for lighting applications.We begin with highlighting the ideal spectral characteristics and corresponding performance metrics for lighting.This is followed by a systematic summary of the mechanisms,optimization strategies,and recent advances of STE emission in metal halides.Finally,we outline the major challenges and prospective trends for metal halide STE emitters.This review aims to offer valuable insights into metal halide STE emitters and their lighting applications for facilitating the future commercialization.
基金Supported by the National Natural Science Foundation of China(62204250)Autonomous deployment project of State Key Laboratory of Materials for Integrated Circuits(SKLJC-Z2024-A05).
文摘In this paper,we present a broadband,high-extinction-ratio,nonvolatile 2×2 Mach-Zehnder interfer⁃ometer(MZI)optical switch based on the phase change material Sb_(2)Se_(3).The insertion loss(IL)is 0.84 dB and the extinction ratio(ER)reaches 28.8 dB at the wavelength of 1550 nm.The 3 dB bandwidth is greater than 150 nm.Within the 3 dB bandwidth,the ER is greater than 20.3 dB and 16.3 dB at bar and cross states,respectively.The power consumption for crystallization and amorphization of Sb_(2)Se_(3) is 105.86 nJ and 49 nJ,respectively.The switch holds significant promise for optical interconnects and optical computing applications.
基金supported by the National Natural Science Foundation of China(Nos.62301092 and 62301093).
文摘Vision Transformers(ViTs)have achieved remarkable success across various artificial intelligence-based computer vision applications.However,their demanding computational and memory requirements pose significant challenges for de-ployment on resource-constrained edge devices.Although post-training quantization(PTQ)provides a promising solution by reducing model precision with minimal calibration data,aggressive low-bit quantization typically leads to substantial perfor-mance degradation.To address this challenge,we present the truncated uniform-log2 quantizer and progressive bit-decline reconstruction method for vision Transformer quantization(TP-ViT).It is an innovative PTQ framework specifically designed for ViTs,featuring two key technical contributions:(1)truncated uniform-log2 quantizer,a novel quantization approach which effectively handles outlier values in post-Softmax activations,significantly reducing quantization errors;(2)bit-decline optimiza-tion strategy,which employs transition weights to gradually reduce bit precision while maintaining model performance under extreme quantization conditions.Comprehensive experiments on image classification,object detection,and instance segmenta-tion tasks demonstrate TP-ViT’s superior performance compared to state-of-the-art PTQ methods,particularly in challenging 3-bit quantization scenarios.Our framework achieves a notable 6.18 percentage points improvement in top-1 accuracy for ViT-small under 3-bit quantization.These results validate TP-ViT’s robustness and general applicability,paving the way for more efficient deployment of ViT models in computer vision applications on edge hardware.
基金supported by the National Key R&D Project from the Minister of Science and Technology(2024YFA1211500)the National Natural Science Foundation of China(Grant Nos.62304130,62405158 and 62574123)+1 种基金the Shanghai youth science and technology star project(24QA2702800)Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle。
文摘Memristors have emerged as a transformative technology in the realm of electronic devices,offering unique advantages such as fast switching speeds,low power consumption,and the ability to sensor-memory-compute.The applications span across non-volatile memory,neuromorphic computing,hardware security,and beyond,prompting memristors to become a versatile solution for next-generation computing and data storage systems.Despite enormous potential of memristors,the transition from laboratory prototypes to large-scale applications is challenging in terms of material stability,device reproducibility,and array scalability.This review systematically explores recent advancements in high-performance memristor technologies,focusing on performance enhancement strategies through material engineering,structural design,pulse protocol optimization,and algorithm control.We provide an in-depth analysis of key performance metrics tailored to specific applications,including non-volatile memory,neuromorphic computing,and hardware security.Furthermore,we propose a co-design framework that integrates device-level optimizations with operational-level improvements,aiming to bridge the gap between theoretical models and practical implementations.
基金supported in part by the National Natural Science Foundation of China(Grant Nos.52272168 and 62322410)the Anhui Provincial Natural Science Foundation(Grant No.2308085J08)USTC Bihe Youth Program for Interdisciplinary Innovation(Grant No.BH-202514).
文摘Solar-blind ultraviolet photodetectors(UV PDs),capable of detecting UV radiation without interference from sun-light,have attracted significant interest.Herein,we propose a 0D/1D heterostructure for UV PDs,which was fabricated by spin-coating MoS_(2)quantum dots onto p-AlGaN nanowires.The device achieves a high responsivity of 175.5 mA/W and a fast response speed of 83 ms at 250 nm illumination under self-powered mode,which improved nearly 1235%and 521%after MoS_(2)decoration,respectively.These improvements can be attributed to the type-Ⅱheterostructure formed between p-AlGaN and MoS_(2),which facilitates enhanced charge separation and carrier transport.Later,we demonstrate the implementation of this device in optical communication,achieving high-accuracy transmission of"GaN"ASCII code signals.Such a 0D/1D het-erostructure provides an effective strategy for high-performance solar-blind UV PD.
基金National Natural Science Foundation of China (No. 62001061)。
文摘In this article,a graphic design method for broadband Doherty power amplifier(DPA) is proposed based on the basic principle of impedance matching with the help of Smith chart.The proposed graphic method avoids the complex formula derivation in the traditional amplifier circuit design process,and the design process is more simple and intuitive.Besides,it only takes three steps to build the load modulation network(LMN) of two power amplifiers(PA) of the DPA.Besides,a capacitor is used to replace the parasitic parameters of the transistor,and the LMN designed in the two modes is used for exploration and comparison.Further more,the output impedance of the peaking PA is introduced to make the reflection coefficient trajectory on Smith chart lowfrequency dispersion so as to expand the bandwidth of the DPA at the output power back-off(OBO) level.It would not affect the performance of DPA in the saturation(SAT) state.In this way,a broadband DPA can be implemented easily.To validate the proposed design method,a broadband DPA operating from 1.9to 2.6 GHz is designed and measured based on the proposed method.Under the continuous-wave excitation,the fabricated DPA has a 6 dB OBO efficiency of 48%-56% and a SAT efficiency of 64%-73% from 1.75 to 2.45 GHz,and the peak output power is 48.9-49.8 dBm.
基金supported by the NSFC under Grant No.62474169the National Key Research and Development Program of China under Grant No.2024YFB3212200the funding from USTC under Grant Nos.WK2100000025,KY2190000003,and KY2190000006。
文摘Soft X-ray detectors play a vital role in materials science,high-energy physics and medical imaging.Cs_(2)AgBiBr_(6),a lead-free double perovskite,has gained attention for its excellent optoelectronic properties,stability,and nontoxicity.However,its fast crystallization and requirement for high-temperature annealing(>250℃)often lead to inferior film quality,limiting its application in flexible devices.This study introduces an alloying strategy that significantly improves the quality of Cs_(2)AgBiBr_(6)thin films annealed at a reduced temperature of 150℃.Devices based on the alloyed thin films exhibit an ultra-low dark current of 0.32 nA·cm^(-2)and a quantum efficiency of 725%.Furthermore,the first successful integration of Cs_(2)AgBiBr_(6)with a thinfilm transistor backplane demonstrates its superior imaging performance,indicating that Cs_(2)AgBiBr_(6)is a promising material for next-generation soft X-ray sensors.
基金supported by the National Key R&D Program of China[2022YFF0902703]the State Administration for Market Regulation Science and Technology Plan Project(2024MK033).
文摘Recommendation systems are key to boosting user engagement,satisfaction,and retention,particularly on media platforms where personalized content is vital.Sequential recommendation systems learn from user-item interactions to predict future items of interest.However,many current methods rely on unique user and item IDs,limiting their ability to represent users and items effectively,especially in zero-shot learning scenarios where training data is scarce.With the rapid development of Large Language Models(LLMs),researchers are exploring their potential to enhance recommendation systems.However,there is a semantic gap between the linguistic semantics of LLMs and the collaborative semantics of recommendation systems,where items are typically indexed by IDs.Moreover,most research focuses on item representations,neglecting personalized user modeling.To address these issues,we propose a sequential recommendation framework using LLMs,called CIT-Rec,a model that integrates Collaborative semantics for user representation and Image and Text information for item representation to enhance Recommendations.Specifically,by aligning intuitive image information with text containing semantic features,we can more accurately represent items,improving item representation quality.We focus not only on item representations but also on user representations.To more precisely capture users’personalized preferences,we use traditional sequential recommendation models to train on users’historical interaction data,effectively capturing behavioral patterns.Finally,by combining LLMs and traditional sequential recommendation models,we allow the LLM to understand linguistic semantics while capturing collaborative semantics.Extensive evaluations on real-world datasets show that our model outperforms baseline methods,effectively combining user interaction history with item visual and textual modalities to provide personalized recommendations.
文摘To address the challenges of complexity,power consumption,and cost constraints in traditional display driver integrated circuits(DDICs)caused by external NOR Flash and SRAM,this work proposes an embedded resistive random-access memory(RRAM)integration solution based on a 40 nm high-voltage CMOS logic platform.Targeting the yield fluctuations and stability challenges during RRAM mass production,systematic process optimizations are implemented to achieve synergistic improvements in RRAM performance and yield.Through modifications to the film sputtering and pre-deposition treatment,the withinwafer resistance uniformity(RSU)of the oxygen-deficient layer(ODL)thin film is improved from 11%to 8%,while inter-wafer process stability variation reduces from 23%to below 6%.Consequently,the yield of 8 Mb RRAM embedded mass production products increases from 87%to 98.5%.In terms of device performance,the RRAM demonstrates a fast 4.8 ns read speed,exceptional read disturb immunity of 3×10^(8) cycles at 95℃,10^(3) write/erase endurance cycles for the 1 Mb cells,and data retention of 12.5 years at 125℃.Post high-temperature operating life(HTOL)testing exhibits stable high/low resistance window.This study provides process optimization strategies and a reliability assurance framework for the mass production of highly integrated,low-power embedded RRAM display driver IC.
基金financial support given by the National Natural Science Foundation of China(52227808,62574124)Shanghai Science and Technology Commission(25ZR1401120)+2 种基金the National Science Foundation for Distinguished Young Scholars of China(51725505)the Development Fund for Shanghai Talents(2021003)Digital Medical Research Institute,Shanghai University(SHU-UM-JBGS-2025-14)。
文摘Surface electromyogram(sEMG)signals are valuable in healthcare and human-machine interaction.However,s EMG signals are inherently weak and unstable bioelectrical signals,rendering them highly susceptible to perturbations from various external factors.In this work,we firstly proposed utilizing the industrially producible Gen-4.5 heterogeneous integration technology to design an active 16-channel microelectrode array(MEA)based on amorphous indium-gallium-zinc oxide thin-film transistors(a-IGZO TFTs)capable of capturing and decoding sEMG signals.The a-IGZO TFTs demonstrate exceptional stability under bias(±20 V),temperature(200℃),and bending(6 mm,30000 cycles),with a threshold voltage shift of less than 0.1 V and a standard deviation under 0.07 V for 100 randomly selected devices.Our state-of-the-art 16-channel active MEAs can collect sEMG signals from various hand gestures and analysis of motor unit action potential trains,expanding possibilities for human-machine interaction and electronic healthcare applications.The signal-to-noise ratio of sEMG signals reaches 85 dB,enabling a high average hand gesture recognition accuracy of 96.2%.This work highlights the potential of the scalable sEMG arrays with exceptional stability for multi-channel sEMG signal acquisition,representing a significant advancement in wearable health monitoring and interactive systems.
基金supported by the National Natural Science Foundation of China(nos.62461160330,62304021,and 62404018)the Hebei Natural Science Foundation(F2024105006),the China Postdoctoral Science Foundation(2024T171120 and 2023M740232)the Postdoctoral Fellowship Program of China Postdoctoral Science Foundation(CPSF)(GZB20230932).
文摘All-optically controlled artificial synapses for neuromorphic vision offer unique advantages in simplifying circuit design and minimizing power consumption,meeting the application demands of the current artificial intelligence era.However,developing all-optically controlled devices that combine high performance and high reproducibility remains a significant challenge.In this work,we demonstrate an all-optically controlled artificial synapse based on ZnO and Cs_(2)CoCl_(4)single crystal connected structure,which integrates light information sensing and processing capabilities.Relying on the simple series-connected structure,as well as the positive photoconductance of ZnO and the negative photoconductance of Cs_(2)CoCl_(4),the optically controlled bidirectional synaptic plasticity is realized under ultraviolet and visible light stimulation without additional voltage modulation in the all-optically controlled synapse.In addition,leveraging its ultraviolet-enhanced feature extraction and visible-suppression capabilities,the all-optically controlled synapse can act as denoising units in bioinformation preprocessing and weight-updating units in feature recognition.The proposed all-optically controlled synapses exhibit excellent information perception,low-level noise reduction,and high-level cognition functions for bioinformation recognition under complex light conditions.We believe that this work can provide structural-level insights and inspirations in the design and fabrication of all-optically controlled synapses to promote the application for efficient neuromorphic vision in the future.
文摘Owing to superior breakdown voltage and excellent robustness,the betagallium oxide(β-Ga_(2)O_(3))power device has emerged as a pivotal research frontier in power electronics.Although advanced packaging strategies,including nanosilver paste sintering,alumina direct bond copper(DBC)substrates,and flipchip structures,have been adopted to mitigate the intrinsic low thermal conductivity ofβ-Ga_(2)O_(3).However,a further reduction in the thermal resistance while maintaining high reliability remains a challenge.This study introduces a novel packaging methodology that synergistically integrates nano-silver films with aluminum nitride active metal brazing(AMB-AlN)substrates,achieving an ultra-low junction-to-case thermal resistance.By comprehensive reliability assessments onβ-Ga_(2)O_(3) Schottky barrier diodes(SBDs)and hetero-junction diodes(HJDs),the results demonstrate that the SBDs and HJDs exhibit surge current densities of 0.876 kA/cm^(2) and 0.778 kA/cm^(2),respectively,which represents a significant advancement in device performance benchmarks.These advancements provide critical insights into packaging design for highreliability ultrawide bandgap semiconductor systems.
基金supported by the Fujian Provincial Science and Technology Planning Project(No.2022HZ027006,No.2024HZ021023)National Natural Science Foundation of China(No.U22A20118).
文摘High-entropy materials(HEMs)have attracted considerable research attention in battery applications due to exceptional properties such as remarkable structural stability,enhanced ionic conductivity,superior mechanical strength,and outstanding catalytic activity.These distinctive characteristics render HEMs highly suitable for various battery components,such as electrodes,electrolytes,and catalysts.This review systematically examines recent advances in the application of HEMs for energy storage,beginning with fundamental concepts,historical development,and key definitions.Three principal categories of HEMs,namely high-entropy alloys,high-entropy oxides,and highentropy MXenes,are analyzed with a focus on electrochemical performance metrics such as specific capacity,energy density,cycling stability,and rate capability.The underlying mechanisms by which these materials enhance battery performance are elucidated in the discussion.Furthermore,the pivotal role of machine learning in accelerating the discovery and optimization of novel high-entropy battery materials is highlighted.The review concludes by outlining future research directions and potential breakthroughs in HEM-based battery technologies.
基金supported by the National Natural Science Foundation of China(No.12072139).
文摘The output voltages for the capacitive elements of a neural circuit model can be mapped into dimensionless capacitive variables,which present firing patterns similar to the membrane potentials detected in biological neurons.The inclusion of a memcapacitor also en‐ables consideration of membrane deformation effects,enhancing the model’s capacity to simulate neuronal behavior across varying physio‐logical and environmental conditions.In this study,a capacitor and a memcapacitor are connected through a linear resistor in parallel with other electric components in different branch circuits composed of an inductor and a nonlinear resistor.The electrical activities in a neuron with a double-layer membrane and two capacitive variables are discussed in detail after converting the nonlinear equations for the neural circuit into a theoretical neuron model.A dimensionless neuron model and its corresponding energy function are derived.The field energy function for the neural circuit is converted into an equivalent Hamilton energy function and further validated via the Helmholtz theorem.Furthermore,the average value of energy serves as an indicator for predicting stochastic resonance,as supported by analyzing the distribu‐tion of the coefficient of variation.The neuronal firing patterns are shown to be energy-dependent.An adaptive control strategy is proposed to regulate mode transitions in electrical activities of the neuron.An analog equivalent circuit is constructed to experimentally verify the nu‐merical results,thereby supporting the reliability of the proposed neuron model.
基金supported by the Fundamental Research Funds for the Central Universities(WUT:2024IVA052 and Grant No.104972025KFYjc0089)。
文摘Two-dimensional(2D)multilayer kagome materials hold significant research value for regulating kagome-related physical properties and exploring quantum effects.However,their development is hindered by the scarcity of available material systems,making the identification of novel 2D multilayer kagome candidates particularly important.In this work,three types of 2D materials with trilayer kagome lattices,namely Sc_(6)S_(5)X_(6)(X=Cl,Br,I),are predicted based on first-principles calculations.These 2D materials feature two kagome lattices composed of Sc atoms and one kagome lattice composed of S atoms.Stability analysis indicates that these materials can exist as free-standing 2D materials.Electronic structure calculations reveal that Sc_(6)S_(5)X_(6)are narrow-bandgap semiconductors(0.76–0.95 e V),with their band structures exhibiting flat bands contributed by Sc-based kagome lattices and Dirac band gaps resulting from symmetry breaking.The sulfur-based kagome lattice in the central layer contributes an independent flat band below the Fermi level.Additionally,Sc_(6)S_(5)X_(6)exhibit high carrier mobility,with hole and electron mobilities reaching up to 10^(3)cm^(2)·V^(-1)·s^(-1),indicating potential applications in low-dimensional electronic devices.This work provides an excellent example for the development of novel multilayer 2D kagome materials.
基金funded by the National Natural Science Foundation of China(Grant Nos.62322410,52272168,624B2135,61804047)the Fundamental Research Funds for the Central Universities(No.WK2030000103)。
文摘Human action recognition(HAR)is crucial for the development of efficient computer vision,where bioinspired neuromorphic perception visual systems have emerged as a vital solution to address transmission bottlenecks across sensor-processor interfaces.However,the absence of interactions among versatile biomimicking functionalities within a single device,which was developed for specific vision tasks,restricts the computational capacity,practicality,and scalability of in-sensor vision computing.Here,we propose a bioinspired vision sensor composed of a Ga N/Al N-based ultrathin quantum-disks-in-nanowires(QD-NWs)array to mimic not only Parvo cells for high-contrast vision and Magno cells for dynamic vision in the human retina but also the synergistic activity between the two cells for in-sensor vision computing.By simply tuning the applied bias voltage on each QD-NW-array-based pixel,we achieve two biosimilar photoresponse characteristics with slow and fast reactions to light stimuli that enhance the in-sensor image quality and HAR efficiency,respectively.Strikingly,the interplay and synergistic interaction of the two photoresponse modes within a single device markedly increased the HAR recognition accuracy from 51.4%to 81.4%owing to the integrated artificial vision system.The demonstration of an intelligent vision sensor offers a promising device platform for the development of highly efficient HAR systems and future smart optoelectronics.
基金supported in part by the National Key Research and Development Program of China(Grant No.2021YFC2203400)Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008)+1 种基金Jiangxi Province Double Thousand Plan (Grant No. S2019CQKJ2638)in part the National Natural Science Foundation of China(Grant Nos.62074053).
文摘This study presents aβ-Ga_(2)O_(3)diode featuring a Fin-channel structure and an anode ohmic contact.The device turnoff is facilitated by the depletion effect induced by the work function difference between the sidewall metal andβ-Ga_(2)O_(3).As the forward bias increases,electron accumulation occurs on the Fin-channel sidewalls,reducing the on-resistance and improving the forward characteristics.Moreover,the device exhibits the reduced surface field(RESURF)effect,similar to trench schottky barrier diodes(SBDs),which shifts the electric field at the fin corners and enhances the breakdown voltage.For a device with a 100 nm fin width(W_(fin)),we achieved a breakdown voltage(BV)of 1137 V,a specific on-resistance(R_(on,sp))of 1.8 mΩ·cm^(2),and a power figure of merit(PFOM)of 0.72 GW/cm^(2).This work expands the fabrication approach forβ-Ga_(2)O_(3)-based devices,advancing their potential for high-performance applications.
