Nanoscale lithographic technologies have been intensively studied for the development of the next generation of semiconductor manufacturing practices.While mask-less/direct-write electron beam(EB)lithography methods s...Nanoscale lithographic technologies have been intensively studied for the development of the next generation of semiconductor manufacturing practices.While mask-less/direct-write electron beam(EB)lithography methods serve as a candidate for the upcoming 10-nm node approaches and beyond,it remains difficult to achieve an appropriate level of throughput.Several innovative features of the multiple EB system that involve the use of a thermionic source have been proposed.However,a blanking array mechanism is required for the individual control of multiple beamlets whereby each beamlet is deflected onto a blanking object or passed through an array.This paper reviews the recent developments of our application studies on the development of a high-speed massively parallel electron beam direct write(MPEBDW)lithography.The emitter array used in our study includes nanocrystalline-Si(nc-Si)ballistic electron emitters.Electrons are drifted via multiple tunnelling cascade transport and are emitted as hot electrons.The transport mechanism allows one to quickly turn electron beamlets on or off.The emitter array is a micro-electro-mechanical system(MEMS)that is hetero-integrated with a separately fabricated active-matrix-driving complementary metal-oxide semiconductor(CMOS)large-scale integration(LSI)system that controls each emitter individually.The basic function of the LSI was confirmed to receive external writing bitmap data and generate driving signals for turning beamlets on or off.Each emitted beamlet(10×10μm^(2))is converged to 10×10 nm^(2) on a target via the reduction electron optic system under development.This paper presents an overview of the system and characteristic evaluations of the nc-Si emitter array.We examine beamlets and their electron emission characteristics via a 1:1 exposure test.展开更多
I have been developing MEMS(microelectromechanical systems)technology and supporting the industry through collaboration.A facility was built in house on a 20 mm square wafer for use in prototyping MEMS and ICs(integra...I have been developing MEMS(microelectromechanical systems)technology and supporting the industry through collaboration.A facility was built in house on a 20 mm square wafer for use in prototyping MEMS and ICs(integrated circuits).The constructed MEMS devices include commercialized integrated capacitive pressure sensors,electrostatically levitated rotational gyroscopes,and two-axis optical scanners.Heterogeneous integration,which is a MEMS on an LSI(large-scale integration),was developed for sophisticated systems using LSI made in a foundry.This technology was applied for tactile sensor networks for safe robots,multi FBAR filters on LSI,active-matrix multielectron emitter arrays,and so on.The facility used to produce MEMS on 4-and 6-inch wafers was developed based on an old semiconductor factory and has been used as an open hands-on access facility by many companies.Future directions of MEMS research are discussed.展开更多
文摘Nanoscale lithographic technologies have been intensively studied for the development of the next generation of semiconductor manufacturing practices.While mask-less/direct-write electron beam(EB)lithography methods serve as a candidate for the upcoming 10-nm node approaches and beyond,it remains difficult to achieve an appropriate level of throughput.Several innovative features of the multiple EB system that involve the use of a thermionic source have been proposed.However,a blanking array mechanism is required for the individual control of multiple beamlets whereby each beamlet is deflected onto a blanking object or passed through an array.This paper reviews the recent developments of our application studies on the development of a high-speed massively parallel electron beam direct write(MPEBDW)lithography.The emitter array used in our study includes nanocrystalline-Si(nc-Si)ballistic electron emitters.Electrons are drifted via multiple tunnelling cascade transport and are emitted as hot electrons.The transport mechanism allows one to quickly turn electron beamlets on or off.The emitter array is a micro-electro-mechanical system(MEMS)that is hetero-integrated with a separately fabricated active-matrix-driving complementary metal-oxide semiconductor(CMOS)large-scale integration(LSI)system that controls each emitter individually.The basic function of the LSI was confirmed to receive external writing bitmap data and generate driving signals for turning beamlets on or off.Each emitted beamlet(10×10μm^(2))is converged to 10×10 nm^(2) on a target via the reduction electron optic system under development.This paper presents an overview of the system and characteristic evaluations of the nc-Si emitter array.We examine beamlets and their electron emission characteristics via a 1:1 exposure test.
文摘I have been developing MEMS(microelectromechanical systems)technology and supporting the industry through collaboration.A facility was built in house on a 20 mm square wafer for use in prototyping MEMS and ICs(integrated circuits).The constructed MEMS devices include commercialized integrated capacitive pressure sensors,electrostatically levitated rotational gyroscopes,and two-axis optical scanners.Heterogeneous integration,which is a MEMS on an LSI(large-scale integration),was developed for sophisticated systems using LSI made in a foundry.This technology was applied for tactile sensor networks for safe robots,multi FBAR filters on LSI,active-matrix multielectron emitter arrays,and so on.The facility used to produce MEMS on 4-and 6-inch wafers was developed based on an old semiconductor factory and has been used as an open hands-on access facility by many companies.Future directions of MEMS research are discussed.
