Tin sulphide （SnS） thin films have been recognized as a potential candidate for solar cells. Many fab- rication techniques have been used to grow SnS thin films. The band-gap, Eg of SnS films as reported in litera t...Tin sulphide （SnS） thin films have been recognized as a potential candidate for solar cells. Many fab- rication techniques have been used to grow SnS thin films. The band-gap, Eg of SnS films as reported in litera ture, were found to vary from 1.2-2.5 eV depending on the film fabrication technique. The present work reports the structural, compositional, morphological and optical characterization of SnS thin films fabricated by thermal evaporation at room temperature. Results show that for the given fabrication technique/condition, the band-gap functionally depends on the lattice parameter and grain size. The well-defined variation allows for tailoring SnS film as per requirements.展开更多
The present paper discusses the performance of ITO/PEDOT：PSS/n-SnS/A1 structured solar cells fab- ricated by thermal evaporation. The performance characterizing parameters such as the open circuit voltage, short circ...The present paper discusses the performance of ITO/PEDOT：PSS/n-SnS/A1 structured solar cells fab- ricated by thermal evaporation. The performance characterizing parameters such as the open circuit voltage, short circuit current density, series resistance, parallel resistance, ideality factor and the overall efficiency were found to be dependent on the SnS grain size in the nano-meter regime and incident light intensity. The experimental work directly reconfirms the theoretical results and ideas raised in the literature by early researchers.展开更多
This work presents a comparative study of n-SnS and p-SnS active layers for increased solar cell efficiency. Tin sulphide thin films of various thicknesses having p-type and n-type conductivity were fabricated by ther...This work presents a comparative study of n-SnS and p-SnS active layers for increased solar cell efficiency. Tin sulphide thin films of various thicknesses having p-type and n-type conductivity were fabricated by thermal evaporation. Both type of films had the same（113） orientation of the crystal planes with a constant tensile strain of ~ 0.003 and ~ 0.011, respectively. The persistent photocurrent was observed in all n-SnS and p-SnS samples with the current＇s time decay constant decreasing with increasing film thickness. Hole mobility of thicker p-SnS films was found to be greater than the electron mobility in n-SnS samples, with mobility（both hole and electron） showing an increasing trend with film thickness. The optimum absorber layer thickness for both p-and n-SnS layers should have a high value of diffusion length for a given absorption coefficient and band-gap.展开更多
基金the Department of Science and Technology for funding this work under research project SR/NM/NS-28/2010
文摘Tin sulphide （SnS） thin films have been recognized as a potential candidate for solar cells. Many fab- rication techniques have been used to grow SnS thin films. The band-gap, Eg of SnS films as reported in litera ture, were found to vary from 1.2-2.5 eV depending on the film fabrication technique. The present work reports the structural, compositional, morphological and optical characterization of SnS thin films fabricated by thermal evaporation at room temperature. Results show that for the given fabrication technique/condition, the band-gap functionally depends on the lattice parameter and grain size. The well-defined variation allows for tailoring SnS film as per requirements.
基金the Department of Science and Technology for funding this work under research project SR/NM/NS-28/2010
文摘The present paper discusses the performance of ITO/PEDOT：PSS/n-SnS/A1 structured solar cells fab- ricated by thermal evaporation. The performance characterizing parameters such as the open circuit voltage, short circuit current density, series resistance, parallel resistance, ideality factor and the overall efficiency were found to be dependent on the SnS grain size in the nano-meter regime and incident light intensity. The experimental work directly reconfirms the theoretical results and ideas raised in the literature by early researchers.
基金DST(India) for the financial assistance in terms of fellowship under the INSPIRE program(Fellowship No.IF131164)
文摘This work presents a comparative study of n-SnS and p-SnS active layers for increased solar cell efficiency. Tin sulphide thin films of various thicknesses having p-type and n-type conductivity were fabricated by thermal evaporation. Both type of films had the same（113） orientation of the crystal planes with a constant tensile strain of ~ 0.003 and ~ 0.011, respectively. The persistent photocurrent was observed in all n-SnS and p-SnS samples with the current＇s time decay constant decreasing with increasing film thickness. Hole mobility of thicker p-SnS films was found to be greater than the electron mobility in n-SnS samples, with mobility（both hole and electron） showing an increasing trend with film thickness. The optimum absorber layer thickness for both p-and n-SnS layers should have a high value of diffusion length for a given absorption coefficient and band-gap.
