Cr-doped V_(2)O_(3) thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain.This novel piezoresistive t...Cr-doped V_(2)O_(3) thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain.This novel piezoresistive transduction principle makes Cr-doped V_(2)O_(3) thin film an appealing piezoresistive material.To investigate the piezoresistivity of Cr-doped V_(2)O_(3) thin film for implementation in MEMS sensor applications,the resistance change of differently orientated Cr-doped V_(2)O_(3) thin film piezoresistors with external strain change was measured.With a longitudinal gauge factor of 222 and a transversal gauge factor of 217 at room temperature,isotropic piezoresistivity coefficients were discovered.This results in a significant orientation-independent resistance change with stress for Cr-doped V_(2)O_(3) thin film piezoresistors,potentially useful for new sensor applications.To demonstrate the integration of this new piezoresistive material in sensor applications,a micromachined pressure sensor with Cr-doped V_(2)O_(3) thin film piezoresistors was designed,fabricated and characterized.At 20℃,a sensitivity,offset,temperature coefficient of sensitivity and temperature coefficient of offset of 21.81 mV/V/bar,-25.73 mV/V,-0.076 mV/V/bar/℃ and 0.182 mV/V/℃,respectively,were measured.This work paves the way for further research on this promising piezoresistive transduction principle for use in MEMS sensor applications.展开更多
文摘Cr-doped V_(2)O_(3) thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain.This novel piezoresistive transduction principle makes Cr-doped V_(2)O_(3) thin film an appealing piezoresistive material.To investigate the piezoresistivity of Cr-doped V_(2)O_(3) thin film for implementation in MEMS sensor applications,the resistance change of differently orientated Cr-doped V_(2)O_(3) thin film piezoresistors with external strain change was measured.With a longitudinal gauge factor of 222 and a transversal gauge factor of 217 at room temperature,isotropic piezoresistivity coefficients were discovered.This results in a significant orientation-independent resistance change with stress for Cr-doped V_(2)O_(3) thin film piezoresistors,potentially useful for new sensor applications.To demonstrate the integration of this new piezoresistive material in sensor applications,a micromachined pressure sensor with Cr-doped V_(2)O_(3) thin film piezoresistors was designed,fabricated and characterized.At 20℃,a sensitivity,offset,temperature coefficient of sensitivity and temperature coefficient of offset of 21.81 mV/V/bar,-25.73 mV/V,-0.076 mV/V/bar/℃ and 0.182 mV/V/℃,respectively,were measured.This work paves the way for further research on this promising piezoresistive transduction principle for use in MEMS sensor applications.
