Hot carriers injection （HCI） tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices （75-90 nm）, which does not fit formal degradation power law well, will bring...Hot carriers injection （HCI） tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices （75-90 nm）, which does not fit formal degradation power law well, will bring severe error in lifetime prediction. This phenomenon usually happens under high drain voltage （Vd） stress condition. A new model was presented to fit the degradation curve better. It was observed that the peak of the substrate current under low drain voltage stress cannot be found in ultra-short channel device. Devices with different channel lengths were studied under different Vd stresses in order to understand the relations between peak of substrate current （/sub） and channel length/stress voltage.展开更多
During the past decade,significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel.In this paper,we review exampl...During the past decade,significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel.In this paper,we review examples of applications involving a complex set of material modeling tools and methodologies and share our perspective of the future of the area.Examples are given illustrating the landscape of useful physical models and approaches along with commentary addressing tool relevance and simulation efficiency issues.While the scope of this paper precludes providing in-depth details,references to more focused publications are shared.Finally,we outline how to approach constructing a general infrastructure for supporting TCAD material modeling applications.展开更多
In the past studies have shown that the addition of Ge and Sn into Si lattice to form SiGeSn enhances its carrier mobility and band-gap properties. Conventionally SiGeSn epitaxial films are grown using Ultra-High Vacu...In the past studies have shown that the addition of Ge and Sn into Si lattice to form SiGeSn enhances its carrier mobility and band-gap properties. Conventionally SiGeSn epitaxial films are grown using Ultra-High Vacuum (UHV) conditions with pressures ranging from 10<sup>-8</sup> torr to 10<sup>-10</sup> torr which makes high volume manufacturing very expensive. On the contrary, the use of low-pressure CVD processes (vacuum levels of 10<sup>-2</sup> torr to 10<sup>-4</sup> torr) is economically more viable and yields faster deposition of SiGeSn films. This study outlines the use of a cost-effective Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor to study the impact of substrate temperature and substrate type on the growth and properties of polycrystalline SiGeSn films. The onset of polycrystallinity in the films is attributed to the oxygen-rich PECVD chamber conditions explained using the Volmer-Weber (3D island) mechanism. The properties of the films were characterized using varied techniques to understand the impact of the substrate on film composition, thickness, crystallinity, and strain.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant No 60376024）.
文摘Hot carriers injection （HCI） tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices （75-90 nm）, which does not fit formal degradation power law well, will bring severe error in lifetime prediction. This phenomenon usually happens under high drain voltage （Vd） stress condition. A new model was presented to fit the degradation curve better. It was observed that the peak of the substrate current under low drain voltage stress cannot be found in ultra-short channel device. Devices with different channel lengths were studied under different Vd stresses in order to understand the relations between peak of substrate current （/sub） and channel length/stress voltage.
文摘During the past decade,significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel.In this paper,we review examples of applications involving a complex set of material modeling tools and methodologies and share our perspective of the future of the area.Examples are given illustrating the landscape of useful physical models and approaches along with commentary addressing tool relevance and simulation efficiency issues.While the scope of this paper precludes providing in-depth details,references to more focused publications are shared.Finally,we outline how to approach constructing a general infrastructure for supporting TCAD material modeling applications.
文摘In the past studies have shown that the addition of Ge and Sn into Si lattice to form SiGeSn enhances its carrier mobility and band-gap properties. Conventionally SiGeSn epitaxial films are grown using Ultra-High Vacuum (UHV) conditions with pressures ranging from 10<sup>-8</sup> torr to 10<sup>-10</sup> torr which makes high volume manufacturing very expensive. On the contrary, the use of low-pressure CVD processes (vacuum levels of 10<sup>-2</sup> torr to 10<sup>-4</sup> torr) is economically more viable and yields faster deposition of SiGeSn films. This study outlines the use of a cost-effective Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor to study the impact of substrate temperature and substrate type on the growth and properties of polycrystalline SiGeSn films. The onset of polycrystallinity in the films is attributed to the oxygen-rich PECVD chamber conditions explained using the Volmer-Weber (3D island) mechanism. The properties of the films were characterized using varied techniques to understand the impact of the substrate on film composition, thickness, crystallinity, and strain.
