This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS,which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100mm^(2) chip.The reported image sensor ...This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS,which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100mm^(2) chip.The reported image sensor offers serial digital,analog,and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60μW,which are significant improvements over previous reports.UV optoelectronics have applications in flame detection,satellites,astronomy,UV photography,and healthcare.The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.展开更多
Silicon carbide(SiC)is recognized as an excellent material for microelectromechanical systems(MEMS),especially those operating in challenging environments,such as high temperature,high radiation,and corrosive environm...Silicon carbide(SiC)is recognized as an excellent material for microelectromechanical systems(MEMS),especially those operating in challenging environments,such as high temperature,high radiation,and corrosive environments.However,SiC bulk micromachining is still a challenge,which hinders the development of complex SiC MEMS.To address this problem,we present the use of a carbon nanotube(CNT)array coated with amorphous SiC(a-SiC)as an alternative composite material to enable high aspect ratio(HAR)surface micromachining.By using a prepatterned catalyst layer,a HAR CNT array can be grown as a structural template and then densified by uniformly filling the CNT bundle with LPCVD a-SiC.The electrical properties of the resulting SiC-CNT composite were characterized,and the results indicated that the electrical resistivity was dominated by the CNTs.To demonstrate the use of this composite in MEMS applications,a capacitive accelerometer was designed,fabricated,and measured.The fabrication results showed that the composite is fully compatible with the manufacturing of surface micromachining devices.The Young’s modulus of the composite was extracted from the measured spring constant,and the results show a great improvement in the mechanical properties of the CNTs after coating with a-SiC.The accelerometer was electrically characterized,and its functionality was confirmed using a mechanical shaker.展开更多
Since the performance of micro-electro-mechanical system(MEMS)-based microphones is approaching fundamental physical,design,and material limits,it has become challenging to improve them.Several works have demonstrated...Since the performance of micro-electro-mechanical system(MEMS)-based microphones is approaching fundamental physical,design,and material limits,it has become challenging to improve them.Several works have demonstrated graphene’s suitability as a microphone diaphragm.The potential for achieving smaller,more sensitive,and scalable onchip MEMS microphones is yet to be determined.To address large graphene sizes,graphene-polymer heterostructures have been proposed,but they compromise performance due to added polymer mass and stiffness.This work demonstrates the first wafer-scale integrated MEMS condenser microphones with diameters of 2R=220-320μm,thickness of 7 nm multi-layer graphene,that is suspended over a back-plate with a residual gap of 5μm.The microphones are manufactured with MEMS compatible wafer-scale technologies without any transfer steps or polymer layers that are more prone to contaminate and wrinkle the graphene.Different designs,all electrically integrated are fabricated and characterized allowing us to study the effects of the introduction of a back-plate for capacitive read-out.The devices show high mechanical compliances C_(m)=0.081-1.07μmPa^(−1)(10-100×higher than the silicon reported in the state-of-the-art diaphragms)and pull-in voltages in the range of 2-9.5 V.In addition,to validate the proof of concept,we have electrically characterized the graphene microphone when subjected to sound actuation.An estimated sensitivity of S_(1kHz)=24.3-321 mV Pa^(−1)for a V_(bias)=1.5 V was determined,which is 1.9-25.5×higher than of state-of-the-art microphone devices while having a~9×smaller area.展开更多
基金the Applied and Engineering Sciences(AES),which is part of The Netherlands Organization for Scientific Research(NWO),and which is partly funded by the Ministry of Economic Affairs,for financially supporting this work under project number 16247.
文摘This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS,which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100mm^(2) chip.The reported image sensor offers serial digital,analog,and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60μW,which are significant improvements over previous reports.UV optoelectronics have applications in flame detection,satellites,astronomy,UV photography,and healthcare.The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.
基金Projekt Financial support by the iRel40 Project is acknowledged gratefully.iRel40 is a European co-founded innovation project that has been granted by the ECSEL Joint Undertaking(JU)under grant agreement NO876659.The funding of the project comes from the Horizon 2020 research programme and participating countries.National funding is provided by Germany,including the Free States of Saxony and Thuringia,Austria,Belgium,Finland,France,Italy,the Netherlands,Slovakia,Spain,Sweden,and Turkey.
文摘Silicon carbide(SiC)is recognized as an excellent material for microelectromechanical systems(MEMS),especially those operating in challenging environments,such as high temperature,high radiation,and corrosive environments.However,SiC bulk micromachining is still a challenge,which hinders the development of complex SiC MEMS.To address this problem,we present the use of a carbon nanotube(CNT)array coated with amorphous SiC(a-SiC)as an alternative composite material to enable high aspect ratio(HAR)surface micromachining.By using a prepatterned catalyst layer,a HAR CNT array can be grown as a structural template and then densified by uniformly filling the CNT bundle with LPCVD a-SiC.The electrical properties of the resulting SiC-CNT composite were characterized,and the results indicated that the electrical resistivity was dominated by the CNTs.To demonstrate the use of this composite in MEMS applications,a capacitive accelerometer was designed,fabricated,and measured.The fabrication results showed that the composite is fully compatible with the manufacturing of surface micromachining devices.The Young’s modulus of the composite was extracted from the measured spring constant,and the results show a great improvement in the mechanical properties of the CNTs after coating with a-SiC.The accelerometer was electrically characterized,and its functionality was confirmed using a mechanical shaker.
基金funding from European Union’s Horizon 2020 research and innovation program under Grant Agreement No.881603(Graphene Flagship).
文摘Since the performance of micro-electro-mechanical system(MEMS)-based microphones is approaching fundamental physical,design,and material limits,it has become challenging to improve them.Several works have demonstrated graphene’s suitability as a microphone diaphragm.The potential for achieving smaller,more sensitive,and scalable onchip MEMS microphones is yet to be determined.To address large graphene sizes,graphene-polymer heterostructures have been proposed,but they compromise performance due to added polymer mass and stiffness.This work demonstrates the first wafer-scale integrated MEMS condenser microphones with diameters of 2R=220-320μm,thickness of 7 nm multi-layer graphene,that is suspended over a back-plate with a residual gap of 5μm.The microphones are manufactured with MEMS compatible wafer-scale technologies without any transfer steps or polymer layers that are more prone to contaminate and wrinkle the graphene.Different designs,all electrically integrated are fabricated and characterized allowing us to study the effects of the introduction of a back-plate for capacitive read-out.The devices show high mechanical compliances C_(m)=0.081-1.07μmPa^(−1)(10-100×higher than the silicon reported in the state-of-the-art diaphragms)and pull-in voltages in the range of 2-9.5 V.In addition,to validate the proof of concept,we have electrically characterized the graphene microphone when subjected to sound actuation.An estimated sensitivity of S_(1kHz)=24.3-321 mV Pa^(−1)for a V_(bias)=1.5 V was determined,which is 1.9-25.5×higher than of state-of-the-art microphone devices while having a~9×smaller area.
