An integrated photonics platform that offers high-speed modulators in addition to low-loss and versatile passive components is highly sought after for different applications ranging from AI to next-generation Tbit/s l...An integrated photonics platform that offers high-speed modulators in addition to low-loss and versatile passive components is highly sought after for different applications ranging from AI to next-generation Tbit/s links in optical fiber communication. For this purpose, we introduce the plasmonic BTO-on-SiN platform for high-speed electro-optic modulators. This platform combines the advantages provided by low-loss silicon nitride (SiN) photonics with the highly nonlinear barium titanate (BTO) as the active material. Nanoscale plasmonics enables high-speed modulators operating at electro-optical bandwidths up to 110 GHz with active lengths as short as 5 µm. Here, we demonstrate three different modulators: a 256 GBd C-band Mach-Zehnder (MZ) modulator, a 224 GBd C-band IQ modulator – being both the first BTO IQ and the first IQ modulator on SiN for data communication – and finally, a 200 GBd O-band racetrack (RT) modulator. With this approach we show record data rates of 448 Gbit/s with the IQ modulator and 340 Gbit/s with the MZ modulator. Furthermore, we demonstrate the first plasmonic RT modulator with BTO and how it is ideally suited for low complexity communication in the O-band with low device loss of 2 dB. This work leverages the SiN platform and shows the potential of this technology to serve as a solution to combat the ever-increasing demand for fast modulators.展开更多
High-power tunable lasers are intensely pursued due to their vast application potential such as in telecom,ranging,and molecular sensing.Integrated photonics,however,is usually considered not suitable for high-power a...High-power tunable lasers are intensely pursued due to their vast application potential such as in telecom,ranging,and molecular sensing.Integrated photonics,however,is usually considered not suitable for high-power applications mainly due to its small size which limits the energy storage capacity and,therefore,the output power.In the late 90s,to improve the beam quality and increase the stored energy,large-mode-area(LMA)fibers were introduced in which the optical mode area is substantially large.Such LMA fibers have transformed the high-power capability of fiber systems ever since.Introducing such an LMA technology at the chip-scale can play an equally disruptive role with high power signal generation from an integrated photonics system.To this end,in this work we demonstrate such a technology,and show a very high-power tunable laser with the help of a silicon photonics based LMA power amplifier.We show output power reaching 1.8 W over a tunability range of 60 nm,spanning from 1.83μm to 1.89μm,limited only by the seed laser.Such an integrated LMA device can be used to substantially increase the power of the existing integrated tunable lasers currently limited to a few tens of milliwatts.The power levels demonstrated here reach and surpass that of many benchtop systems which truly makes the silicon photonics based integrated LMA device poised towards mass deployment for high power applications without relying on benchtop systems.展开更多
Optical parametric amplification(OPA)represents a powerful solution to achieve broadband amplification in wavelength ranges beyond the scope of conventional gain media,for generating high-power optical pulses,optical ...Optical parametric amplification(OPA)represents a powerful solution to achieve broadband amplification in wavelength ranges beyond the scope of conventional gain media,for generating high-power optical pulses,optical microcombs,entangled photon pairs and a wide range of other applications.Here,we demonstrate optical parametric amplifiers based on silicon nitride(Si3N4)waveguides integrated with two-dimensional(2D)layered graphene oxide(GO)films.We achieve precise control over the thickness,length,and position of the GO films using a transfer-free,layer-by-layer coating method combined with accurate window opening in the chip cladding using photolithography.Detailed OPA measurements with a pulsed pump for the fabricated devices with different GO film thicknesses and lengths show a maximum parametric gain of~24.0 dB,representing a~12.2 dB improvement relative to the device without GO.We perform a theoretical analysis of the device performance,achieving good agreement with experiment and showing that there is substantial room for further improvement.This work represents the first demonstration of integrating 2D materials on chips to enhance the OPA performance,providing a new way of achieving high performance photonic integrated OPA by incorporating 2D materials.展开更多
基金funded by the EC H2020 projects NEBULA(871658)PlasmoniAC(871391).
文摘An integrated photonics platform that offers high-speed modulators in addition to low-loss and versatile passive components is highly sought after for different applications ranging from AI to next-generation Tbit/s links in optical fiber communication. For this purpose, we introduce the plasmonic BTO-on-SiN platform for high-speed electro-optic modulators. This platform combines the advantages provided by low-loss silicon nitride (SiN) photonics with the highly nonlinear barium titanate (BTO) as the active material. Nanoscale plasmonics enables high-speed modulators operating at electro-optical bandwidths up to 110 GHz with active lengths as short as 5 µm. Here, we demonstrate three different modulators: a 256 GBd C-band Mach-Zehnder (MZ) modulator, a 224 GBd C-band IQ modulator – being both the first BTO IQ and the first IQ modulator on SiN for data communication – and finally, a 200 GBd O-band racetrack (RT) modulator. With this approach we show record data rates of 448 Gbit/s with the IQ modulator and 340 Gbit/s with the MZ modulator. Furthermore, we demonstrate the first plasmonic RT modulator with BTO and how it is ideally suited for low complexity communication in the O-band with low device loss of 2 dB. This work leverages the SiN platform and shows the potential of this technology to serve as a solution to combat the ever-increasing demand for fast modulators.
基金supported by EU Horizon 2020 Framework Programme—Grant Agreement No.:965124(FEMTOCHIP)Deutsche Forschungsgemeinschaft(SP2111)contract number PACE:Ka908/10-1Open Access funding enabled and organized by Projekt DEAL.
文摘High-power tunable lasers are intensely pursued due to their vast application potential such as in telecom,ranging,and molecular sensing.Integrated photonics,however,is usually considered not suitable for high-power applications mainly due to its small size which limits the energy storage capacity and,therefore,the output power.In the late 90s,to improve the beam quality and increase the stored energy,large-mode-area(LMA)fibers were introduced in which the optical mode area is substantially large.Such LMA fibers have transformed the high-power capability of fiber systems ever since.Introducing such an LMA technology at the chip-scale can play an equally disruptive role with high power signal generation from an integrated photonics system.To this end,in this work we demonstrate such a technology,and show a very high-power tunable laser with the help of a silicon photonics based LMA power amplifier.We show output power reaching 1.8 W over a tunability range of 60 nm,spanning from 1.83μm to 1.89μm,limited only by the seed laser.Such an integrated LMA device can be used to substantially increase the power of the existing integrated tunable lasers currently limited to a few tens of milliwatts.The power levels demonstrated here reach and surpass that of many benchtop systems which truly makes the silicon photonics based integrated LMA device poised towards mass deployment for high power applications without relying on benchtop systems.
基金supported by the Australian Research Council Centre of Excellence Project in Optical Microcombs for Breakthrough Science(No.CE230100006)the Australian Research Council Discovery Projects Programs(DP190103186,FT210100806)+5 种基金Linkage Program(LP210200345)the Swinburne ECR-SUPRA program,the Industrial Transformation Training Centers scheme(Grant No.IC180100005)the Beijing Natural Science Foundation(No.Z180007)the Agence Nationale de la Recherche(ANR)(Grant No.MIRSiCOMB,ANR-17-CE24-0028)the H2020 European Research Council(ERC)(Grant No.GRAPHICS,648546)supported by the International Associated Laboratory in Photonics between France and Australia(LIA ALPhFA).
文摘Optical parametric amplification(OPA)represents a powerful solution to achieve broadband amplification in wavelength ranges beyond the scope of conventional gain media,for generating high-power optical pulses,optical microcombs,entangled photon pairs and a wide range of other applications.Here,we demonstrate optical parametric amplifiers based on silicon nitride(Si3N4)waveguides integrated with two-dimensional(2D)layered graphene oxide(GO)films.We achieve precise control over the thickness,length,and position of the GO films using a transfer-free,layer-by-layer coating method combined with accurate window opening in the chip cladding using photolithography.Detailed OPA measurements with a pulsed pump for the fabricated devices with different GO film thicknesses and lengths show a maximum parametric gain of~24.0 dB,representing a~12.2 dB improvement relative to the device without GO.We perform a theoretical analysis of the device performance,achieving good agreement with experiment and showing that there is substantial room for further improvement.This work represents the first demonstration of integrating 2D materials on chips to enhance the OPA performance,providing a new way of achieving high performance photonic integrated OPA by incorporating 2D materials.
