CdS films prepared with chemical pyrolysis deposition (CPD) at differ- ent temperature during film growth were characterized by XRD. Hexagon-like struc- ture appeared at the temperature of 350-500℃, while wurtzite ph...CdS films prepared with chemical pyrolysis deposition (CPD) at differ- ent temperature during film growth were characterized by XRD. Hexagon-like struc- ture appeared at the temperature of 350-500℃, while wurtzite phase was observed at temperature of 540℃ during film growth. Also CdS films prepared by CPD at 400℃ were undergone post annealing at different temperature of 200-600℃ or post Ar+ ion irradiation. It is found that wurtzite phase happened when the annealing temperature rose to 600℃. And hexagon-like structure existed at the annealing temperature from 25℃ to near 500℃. Ar+ ion irradiation could not cause phase transformation. but induce some preferred orientations and an increase in grain size for the CdS films.展开更多
基金Partly supported by the Visiting Scholar Funds of The Key Laboratory in University of China
文摘CdS films prepared with chemical pyrolysis deposition (CPD) at differ- ent temperature during film growth were characterized by XRD. Hexagon-like struc- ture appeared at the temperature of 350-500℃, while wurtzite phase was observed at temperature of 540℃ during film growth. Also CdS films prepared by CPD at 400℃ were undergone post annealing at different temperature of 200-600℃ or post Ar+ ion irradiation. It is found that wurtzite phase happened when the annealing temperature rose to 600℃. And hexagon-like structure existed at the annealing temperature from 25℃ to near 500℃. Ar+ ion irradiation could not cause phase transformation. but induce some preferred orientations and an increase in grain size for the CdS films.
