The effect of different annealing temperatures on the structure, morphology,and optical properties of ZnO thin films prepared by the chelating sol-gel method was investigated.Zinc-oxide thin films were coated on quart...The effect of different annealing temperatures on the structure, morphology,and optical properties of ZnO thin films prepared by the chelating sol-gel method was investigated.Zinc-oxide thin films were coated on quartz glass substrates by dip coating. Zinc nitrate, absoluteethanol, and citric acid were used as precursor, solvent, and chelating agent, respectively. Theresults show that ZnO films derived from zinc-citrate have lower crystallization temperature (below400℃), and that the crystal structure is wurtzite. The films, treated over 500℃, consist ofnano-particles and show to be porous at 600℃. The particle size of the film increases with theincrease of the annealing temperature. The largest particle size is 60 nm at 600℃. The opticaltransmittances related to the annealing temperatures become 90% higher in the visible range. Thefilm shows a starting absorption at 380 nm, and the optical band-gap of the thin film (fired at500℃) is 3.25 eV and close to the intrinsic band-gap of ZnO (3.2 eV).展开更多
CdS thin films were deposited by the ion layer gas reaction (TLGAR) method.Structural, chemical, topographical development as well as optical and electrical properties ofas-deposited and annealed thin films were inves...CdS thin films were deposited by the ion layer gas reaction (TLGAR) method.Structural, chemical, topographical development as well as optical and electrical properties ofas-deposited and annealed thin films were investigated by XRD, SEM, XPS, AFM and UV-VIS. The resultsshowed that the thin films are uniform, compact and good in adhesion to the substrates, and thegrowth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structureto the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. Anamount of C, O and Cl impurities can be reduced by increasing the drying temperature or byannealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higherwavelength after annealing or increasing film thickness. The electrical resistivity decreases withincreasing annealing temperature and film thickness.展开更多
RuS_2 thin films were prepared by the cost-effective chemicalmethod―successive ionic layer adsorption and reaction (SILAR). The structural, optical, andelectrical properties were investigated using X-ray diffraction,...RuS_2 thin films were prepared by the cost-effective chemicalmethod―successive ionic layer adsorption and reaction (SILAR). The structural, optical, andelectrical properties were investigated using X-ray diffraction, scanning electron microscopy,optical transmittance, and electrical resistivity methods. The results indicate that the films arehomogeneous and dense; the structure of the as-deposited films is amorphous and they crystallizeafter annealed at 500℃ for 30 min. The band gap of the as-deposited films is found to be 1.85 eV,and the electrical resistivity of them is in the order of 10~5 Ω·cm.展开更多
The resistance-temperature properties of po- rous (Ba, Pb)TiO3 semiconductor ceramic were systemati- cally studied. It was found that the resistance of (Ba, Pb)TiO3 ceramic having been placed in the air for a long tim...The resistance-temperature properties of po- rous (Ba, Pb)TiO3 semiconductor ceramic were systemati- cally studied. It was found that the resistance of (Ba, Pb)TiO3 ceramic having been placed in the air for a long time was abnormally increased with the increase of the temperature from the room temperature to 70℃ prior to the Curie point. Further research showed that this abnormal resis- tance-temperature property was linked to its humidity sensi- tivity. When the relative humidity changed from 11% to 93%, the resistance of (Ba, Pb)TiO3 ceramic decreased three orders of magnitude. Furthermore, the humidity-resistance was approximately linear in single logarithm coordinate. According to the surface adsorption, grain-boundary poten- tial barrier and ferroelectric-paraelectric phase transforma- tion, the specific sensitive mechanism of (Ba, Pb)TiO3 ce- ramic was analyzed qualitatively.展开更多
基金This work was financially supported by the Natural Science Foundation of Tianjin (No. 33802311)
文摘The effect of different annealing temperatures on the structure, morphology,and optical properties of ZnO thin films prepared by the chelating sol-gel method was investigated.Zinc-oxide thin films were coated on quartz glass substrates by dip coating. Zinc nitrate, absoluteethanol, and citric acid were used as precursor, solvent, and chelating agent, respectively. Theresults show that ZnO films derived from zinc-citrate have lower crystallization temperature (below400℃), and that the crystal structure is wurtzite. The films, treated over 500℃, consist ofnano-particles and show to be porous at 600℃. The particle size of the film increases with theincrease of the annealing temperature. The largest particle size is 60 nm at 600℃. The opticaltransmittances related to the annealing temperatures become 90% higher in the visible range. Thefilm shows a starting absorption at 380 nm, and the optical band-gap of the thin film (fired at500℃) is 3.25 eV and close to the intrinsic band-gap of ZnO (3.2 eV).
文摘CdS thin films were deposited by the ion layer gas reaction (TLGAR) method.Structural, chemical, topographical development as well as optical and electrical properties ofas-deposited and annealed thin films were investigated by XRD, SEM, XPS, AFM and UV-VIS. The resultsshowed that the thin films are uniform, compact and good in adhesion to the substrates, and thegrowth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structureto the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. Anamount of C, O and Cl impurities can be reduced by increasing the drying temperature or byannealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higherwavelength after annealing or increasing film thickness. The electrical resistivity decreases withincreasing annealing temperature and film thickness.
基金This work is financially supported by the Tianjin Science and Technology Committee, China (No. F103004).
文摘RuS_2 thin films were prepared by the cost-effective chemicalmethod―successive ionic layer adsorption and reaction (SILAR). The structural, optical, andelectrical properties were investigated using X-ray diffraction, scanning electron microscopy,optical transmittance, and electrical resistivity methods. The results indicate that the films arehomogeneous and dense; the structure of the as-deposited films is amorphous and they crystallizeafter annealed at 500℃ for 30 min. The band gap of the as-deposited films is found to be 1.85 eV,and the electrical resistivity of them is in the order of 10~5 Ω·cm.
基金This work was supported by the Key Problems Foundation of Shanxi Province(Grant No.021121)Youth Founda-tion of Taiyuan University of Technology(Grant No.190-12901073).
文摘The resistance-temperature properties of po- rous (Ba, Pb)TiO3 semiconductor ceramic were systemati- cally studied. It was found that the resistance of (Ba, Pb)TiO3 ceramic having been placed in the air for a long time was abnormally increased with the increase of the temperature from the room temperature to 70℃ prior to the Curie point. Further research showed that this abnormal resis- tance-temperature property was linked to its humidity sensi- tivity. When the relative humidity changed from 11% to 93%, the resistance of (Ba, Pb)TiO3 ceramic decreased three orders of magnitude. Furthermore, the humidity-resistance was approximately linear in single logarithm coordinate. According to the surface adsorption, grain-boundary poten- tial barrier and ferroelectric-paraelectric phase transforma- tion, the specific sensitive mechanism of (Ba, Pb)TiO3 ce- ramic was analyzed qualitatively.
