A novel co-sputtering method that combined magnetron sputtering (MS) with ion beam sputtering (IBS) was used to fabricate CuCr alloy films without breaking vacuum after depositing diffusion barrier with IBS. Different...A novel co-sputtering method that combined magnetron sputtering (MS) with ion beam sputtering (IBS) was used to fabricate CuCr alloy films without breaking vacuum after depositing diffusion barrier with IBS. Different bombardment energies were used to improve the comprehensive properties of Cu alloy film. The results indicated that the effects of diffusion barriers and bombardment energy on adhesive strength could be evaluated by a rolling contact fatigue adhesion test. Diffusion barrier can enhance the adhesive strength, and the adhesion of CuCr/CrN was higher than that of CuCr/TiN. When bombarding energy was higher, the adhesive strength of CuCr/TiN films was higher due to the broader transition zone.展开更多
Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepared by DC pulsed magnetron sputtering. The Cu/Zr-Si-N systems were annealed in vacuum and N2/H2 ga...Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepared by DC pulsed magnetron sputtering. The Cu/Zr-Si-N systems were annealed in vacuum and N2/H2 gas mixture at 800°C, respectively. The structure of the films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and four-point probe method. The sheet resistances of the Cu/Zr-Si-N/Si contact systems annealed in N2/H2 gas mixture were lower than those of the specimens annealed in vacuum at 800°C. The residual oxygen contamination from vacuum annealing ambience influences the sheet resistances of the Cu/Zr-Si-N/Si contact systems due to residual oxygen contamination and/or voids in Cu films. Though thermal stabilities of the Cu/Zr-Si-N/Si systems were maintained up to 800°C when annealed in vacuum and N2/H2 gas mixture, the changes of thermal stability of specimens were noticeable. The vacuum can accelerate the oxidation and decomposition of Zr-Si-N barrier. On the contrary, N2/H2 gas mixture prevent from the Zr-Si-N barrier oxidation and decomposition.展开更多
基金the Natural Science Foundation of China for its financial support under the granted No.59931010.
文摘A novel co-sputtering method that combined magnetron sputtering (MS) with ion beam sputtering (IBS) was used to fabricate CuCr alloy films without breaking vacuum after depositing diffusion barrier with IBS. Different bombardment energies were used to improve the comprehensive properties of Cu alloy film. The results indicated that the effects of diffusion barriers and bombardment energy on adhesive strength could be evaluated by a rolling contact fatigue adhesion test. Diffusion barrier can enhance the adhesive strength, and the adhesion of CuCr/CrN was higher than that of CuCr/TiN. When bombarding energy was higher, the adhesive strength of CuCr/TiN films was higher due to the broader transition zone.
基金the Natural Science Foundation of China for its financial support under the granted No.59931010
文摘Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepared by DC pulsed magnetron sputtering. The Cu/Zr-Si-N systems were annealed in vacuum and N2/H2 gas mixture at 800°C, respectively. The structure of the films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and four-point probe method. The sheet resistances of the Cu/Zr-Si-N/Si contact systems annealed in N2/H2 gas mixture were lower than those of the specimens annealed in vacuum at 800°C. The residual oxygen contamination from vacuum annealing ambience influences the sheet resistances of the Cu/Zr-Si-N/Si contact systems due to residual oxygen contamination and/or voids in Cu films. Though thermal stabilities of the Cu/Zr-Si-N/Si systems were maintained up to 800°C when annealed in vacuum and N2/H2 gas mixture, the changes of thermal stability of specimens were noticeable. The vacuum can accelerate the oxidation and decomposition of Zr-Si-N barrier. On the contrary, N2/H2 gas mixture prevent from the Zr-Si-N barrier oxidation and decomposition.
