MXene nanomaterials are one of the most promising electrode material candidates for supercapacitors owing to their high conductivity,abundant surface functional groups and large surface area.However,electrodes based o...MXene nanomaterials are one of the most promising electrode material candidates for supercapacitors owing to their high conductivity,abundant surface functional groups and large surface area.However,electrodes based on MXene may result in low ion-accessible surface area and blocked ion transport pathways because of the self-restacking of MXene nanosheets.It is essential to suppress the self-res tacking of nanosheets and increase the electrochemical active sites in order to optimize the electrode.In this work,bidirectionally aligned MXene hybrid aerogel(A-MHA)assembled with MXene nanosheets and microgels is prepared using a facile bidirectional freeze casting and freeze-drying method.The bidirectionally aligned structure together with the three-dimensional structured microgels in the A-MHAs,can improve the ionaccessible surface area and provide more barrier-free channels by exposing more active sites and ensuring electrolyte transport freely.The A-MHA with MXene microgels content of 40 wt%exhibits a high specific capacitance of 760 F·g^(-1)at 1 A·g^(-1)and a remarkable cyclic performance of 97%after 10,000 cycles at100 mV·s^(-1)in 1 mol·L^(-1)H_(2)SO_(4)electrolyte.A-MHAs show remarkable electrochemical properties and are of potential application in energy storage.展开更多
Inverse method was used in single crystal superalloy DD6 processing simulation during solidification. Numerical modeling coupled with experiments has been used to estimate the interface heat transfer coefficient （IHT...Inverse method was used in single crystal superalloy DD6 processing simulation during solidification. Numerical modeling coupled with experiments has been used to estimate the interface heat transfer coefficient （IHTC） between the surface of slab casting and inner mold. Calculated temperature dependent values of IHTC were obtained from a numerical solution. The calculated temperatures agreed well with the measurement of cooling profile.展开更多
The AgCuInGa alloy precursors with different Ag concentrations are fabricated by sputtering an Ag target and a CuInGa target.The precursors are selenized in the H_(2)Se-containing atmosphere to prepare(Ag,Cu)(In,Ga)Se...The AgCuInGa alloy precursors with different Ag concentrations are fabricated by sputtering an Ag target and a CuInGa target.The precursors are selenized in the H_(2)Se-containing atmosphere to prepare(Ag,Cu)(In,Ga)Se_(2)(ACIGS)absorbers.The beneficial effects of Ag doping are demonstrated and their mechanism is explained.It is found that Ag doping significantly improves the films crystallinity.This is believed to be due to the lower melting point of chalcopyrite phase obtained by the Ag doping.This leads to a higher migration ability of the atoms that in turn promotes grain boundary migration and improves the film crystallinity.The Ga enrichment at the interface between the absorber and the back electrode is also alleviated during the selenization annealing.It is found that Ag doping within a specific range can passivate the band tail and improve the quality of the films.Therefore,carrier recombination is reduced and carrier transport is improved.The negative effects of excessive Ag are also demonstrated and their origin is revealed.Because the atomic size of Ag is different from that of Cu,for the Ag/(Ag+Cu)ratio(AAC)≥0.030,lattice distortion is aggravated,and significant micro-strain appears.The atomic radius of Ag is close to those of In and Ga,so that the continued increase in AAC will give rise to the Ag;or Ag;defects.Both the structural and compositional defects degrade the quality of the absorbers and the device performance.An excellent absorber can be obtained at AAC of 0.015.展开更多
Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride （h-BN） can be used as bendable dielectric due to its wide band gap. He...Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride （h-BN） can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of -9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 F/cm^2, which is one order of magnitude higher than the calculated value.展开更多
Enhancing the mechanical strength of highly conductive pure metals usually causes significant reduction in their electrical conductivity.For example,introducing phase/matrix interfaces or more grain boundaries,are com...Enhancing the mechanical strength of highly conductive pure metals usually causes significant reduction in their electrical conductivity.For example,introducing phase/matrix interfaces or more grain boundaries,are common and effective methods to strengthen metals.But it simultaneously increases the electron scattering at the interface,thus reducing the electrical conductivity.In this study,we demonstrate that pure aluminum(Al)/carbon nanotubes(CNTs)nanocomposites prepared by friction stir processing have successfully broken through these limitations.The yield strength and tensile strength of Al/CNTs nanocomposites have improved by 104.7%and 51.8%compared to pure Al,while the electrical conductivity remained comparable to that of pure Al.To explore the potential mechanisms,the interface between CNTs and Al was examined and characterized by transmission electron microscopy(TEM)and Raman spectroscopy.Little interfacial reaction compounds were present and no visible physical gaps were observed at CNTs and Al interfaces.We defined it as a clean and tightly bonded interface.Although the quantity of phase interface has increased,the electrical conductivity of the nanocomposite remains approximately unchanged.We attribute the preserved electrical conductivity to the clean and tightly bonded CNTs/Al interface in the nanocomposite.展开更多
基金financially supported by the National Natural Science Foundation of China(No.52002354)China Postdoctoral Science Foundation(No.2020M672256)。
文摘MXene nanomaterials are one of the most promising electrode material candidates for supercapacitors owing to their high conductivity,abundant surface functional groups and large surface area.However,electrodes based on MXene may result in low ion-accessible surface area and blocked ion transport pathways because of the self-restacking of MXene nanosheets.It is essential to suppress the self-res tacking of nanosheets and increase the electrochemical active sites in order to optimize the electrode.In this work,bidirectionally aligned MXene hybrid aerogel(A-MHA)assembled with MXene nanosheets and microgels is prepared using a facile bidirectional freeze casting and freeze-drying method.The bidirectionally aligned structure together with the three-dimensional structured microgels in the A-MHAs,can improve the ionaccessible surface area and provide more barrier-free channels by exposing more active sites and ensuring electrolyte transport freely.The A-MHA with MXene microgels content of 40 wt%exhibits a high specific capacitance of 760 F·g^(-1)at 1 A·g^(-1)and a remarkable cyclic performance of 97%after 10,000 cycles at100 mV·s^(-1)in 1 mol·L^(-1)H_(2)SO_(4)electrolyte.A-MHAs show remarkable electrochemical properties and are of potential application in energy storage.
基金supported by National Basic Research Program of China(No.2005CB724105)National Natural Science Foundation of China (No.10477010)National High Technical Research and Development Program of China(No.2007AA04Z141)
文摘Inverse method was used in single crystal superalloy DD6 processing simulation during solidification. Numerical modeling coupled with experiments has been used to estimate the interface heat transfer coefficient （IHTC） between the surface of slab casting and inner mold. Calculated temperature dependent values of IHTC were obtained from a numerical solution. The calculated temperatures agreed well with the measurement of cooling profile.
基金supported by the analysis support of the State Key Laboratory of New Ceramics and Fine Processing。
文摘The AgCuInGa alloy precursors with different Ag concentrations are fabricated by sputtering an Ag target and a CuInGa target.The precursors are selenized in the H_(2)Se-containing atmosphere to prepare(Ag,Cu)(In,Ga)Se_(2)(ACIGS)absorbers.The beneficial effects of Ag doping are demonstrated and their mechanism is explained.It is found that Ag doping significantly improves the films crystallinity.This is believed to be due to the lower melting point of chalcopyrite phase obtained by the Ag doping.This leads to a higher migration ability of the atoms that in turn promotes grain boundary migration and improves the film crystallinity.The Ga enrichment at the interface between the absorber and the back electrode is also alleviated during the selenization annealing.It is found that Ag doping within a specific range can passivate the band tail and improve the quality of the films.Therefore,carrier recombination is reduced and carrier transport is improved.The negative effects of excessive Ag are also demonstrated and their origin is revealed.Because the atomic size of Ag is different from that of Cu,for the Ag/(Ag+Cu)ratio(AAC)≥0.030,lattice distortion is aggravated,and significant micro-strain appears.The atomic radius of Ag is close to those of In and Ga,so that the continued increase in AAC will give rise to the Ag;or Ag;defects.Both the structural and compositional defects degrade the quality of the absorbers and the device performance.An excellent absorber can be obtained at AAC of 0.015.
基金This work was supported by the National Natural Science Foundation of China （No. 51172122）, the Foundation for the Author of National Excellent Doctoral Dissertation （No. 2007B37） and the Program for New Century Excellent Talents in University, the Tsinghua University Initiative Scientific Research Pro-gram （No. 20111080939）, and the China Postdoctoral Science Foundation （No. 2011M500310）. We thank Prof. Yonggang Zhao and Dr. Xingli Jiang for their help in testing the capacitors.
文摘Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride （h-BN） can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of -9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 F/cm^2, which is one order of magnitude higher than the calculated value.
文摘Enhancing the mechanical strength of highly conductive pure metals usually causes significant reduction in their electrical conductivity.For example,introducing phase/matrix interfaces or more grain boundaries,are common and effective methods to strengthen metals.But it simultaneously increases the electron scattering at the interface,thus reducing the electrical conductivity.In this study,we demonstrate that pure aluminum(Al)/carbon nanotubes(CNTs)nanocomposites prepared by friction stir processing have successfully broken through these limitations.The yield strength and tensile strength of Al/CNTs nanocomposites have improved by 104.7%and 51.8%compared to pure Al,while the electrical conductivity remained comparable to that of pure Al.To explore the potential mechanisms,the interface between CNTs and Al was examined and characterized by transmission electron microscopy(TEM)and Raman spectroscopy.Little interfacial reaction compounds were present and no visible physical gaps were observed at CNTs and Al interfaces.We defined it as a clean and tightly bonded interface.Although the quantity of phase interface has increased,the electrical conductivity of the nanocomposite remains approximately unchanged.We attribute the preserved electrical conductivity to the clean and tightly bonded CNTs/Al interface in the nanocomposite.
