Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination...Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared(NIR)and its high absorption coefficient.In this study,we report the synthesis of Ru Se_(2)thin films by chemical vapor deposition(CVD)with a bandgap matching the NIR region at 0.52 e V.Further,we demonstrated Ru S_(2x)Se_(2-2x)alloy films using the post-sulfurization process after CVD Ru Se_(2)with a tunable bandgap from 0.52 to 1.39 e V depending on sulfur composition.Remarkably,Ru S_(2x)Se_(2-2x)alloy film metal–semiconductor–metal(MSM)photodetector sulfurized at 500°C,with a 0.75 e V bandgap,exhibits enhanced broad absorption across NIR spectral ranges,suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias.We believe the bandgaptunable Ru S_(2x)Se_(2-2x)thin film through an efficient deposition method could be suitable for various optoelectronic applications.展开更多
The chalcogenides of platinum-group metals(PGMs)have been known to be present in minerals and the intermediate products of refining.Over recent years,their applications in various fields,including catalysis,have been ...The chalcogenides of platinum-group metals(PGMs)have been known to be present in minerals and the intermediate products of refining.Over recent years,their applications in various fields,including catalysis,have been explored.Given that certain PGM chalcogenides behave as compound semiconductors,they can be used as materials for photodetectors.In this study,RuS_(2),featuring a bandgap suitable for near-infrared photodetectors,was prepared by forming Ru on a SiO_(2)/Si substrate via the atomic layer deposition method using[Ru(TMM)(CO)_(3)]as the precursor.Annealing was conducted at 800℃ for 1 h under H_(2)S flow.High-resolution transmission electron microscopy(HRTEM)and X-ray diffraction(XRD)analysis clearly confirmed that the as-deposited hexagonal close-packed(hcp)Ru transformed to cubic RuS_(2) after post-annealing.The surface morphologies,chemical states,and electrical and optical properties of RuS_(2) were investigated.The influence of the metallic Ru surface morphology prior to sulfurization on the reaction between Ru and H_(2)S was also discussed.To evaluate the potential of using RuS_(2) as a photodetector,a photodetector was fabricated by forming electrodes on RuS_(2) to measure its photocurrent under near-infrared light.Thus,RuS_(2) was proven to exhibit a short response time(59μs)and generate a photocurrent of 84 nA under near-infrared light at 940 nm.展开更多
基金supported by TANAKA KIKINZOKU KOGYO K.Kfinancially supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.NRF-2022R1A2C2006764)the Materials and Components Technology Development Program of MOTIE/KEIT(No.[20012460])。
文摘Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared(NIR)and its high absorption coefficient.In this study,we report the synthesis of Ru Se_(2)thin films by chemical vapor deposition(CVD)with a bandgap matching the NIR region at 0.52 e V.Further,we demonstrated Ru S_(2x)Se_(2-2x)alloy films using the post-sulfurization process after CVD Ru Se_(2)with a tunable bandgap from 0.52 to 1.39 e V depending on sulfur composition.Remarkably,Ru S_(2x)Se_(2-2x)alloy film metal–semiconductor–metal(MSM)photodetector sulfurized at 500°C,with a 0.75 e V bandgap,exhibits enhanced broad absorption across NIR spectral ranges,suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias.We believe the bandgaptunable Ru S_(2x)Se_(2-2x)thin film through an efficient deposition method could be suitable for various optoelectronic applications.
基金supported by TANAKA Kikinzoku Kogyo K.K.Also by the Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(No.NRF-2021R1I1A1A01057933)。
文摘The chalcogenides of platinum-group metals(PGMs)have been known to be present in minerals and the intermediate products of refining.Over recent years,their applications in various fields,including catalysis,have been explored.Given that certain PGM chalcogenides behave as compound semiconductors,they can be used as materials for photodetectors.In this study,RuS_(2),featuring a bandgap suitable for near-infrared photodetectors,was prepared by forming Ru on a SiO_(2)/Si substrate via the atomic layer deposition method using[Ru(TMM)(CO)_(3)]as the precursor.Annealing was conducted at 800℃ for 1 h under H_(2)S flow.High-resolution transmission electron microscopy(HRTEM)and X-ray diffraction(XRD)analysis clearly confirmed that the as-deposited hexagonal close-packed(hcp)Ru transformed to cubic RuS_(2) after post-annealing.The surface morphologies,chemical states,and electrical and optical properties of RuS_(2) were investigated.The influence of the metallic Ru surface morphology prior to sulfurization on the reaction between Ru and H_(2)S was also discussed.To evaluate the potential of using RuS_(2) as a photodetector,a photodetector was fabricated by forming electrodes on RuS_(2) to measure its photocurrent under near-infrared light.Thus,RuS_(2) was proven to exhibit a short response time(59μs)and generate a photocurrent of 84 nA under near-infrared light at 940 nm.
