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Physical behaviors of impure atoms during relaxation of impure NiAl-based alloy grain boundary
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作者 ZHENG Li-Ping +2 位作者 JIANG Bing-Yao 《Nuclear Science and Techniques》 SCIE CAS CSCD 2003年第1期60-63,共4页
The Monte Carlo simulation with the energetics described by the embedded atom method has been employed to mainly study physical behaviors of boron atoms during relaxation of the Ni3Al-x at.% B grain boundary.During re... The Monte Carlo simulation with the energetics described by the embedded atom method has been employed to mainly study physical behaviors of boron atoms during relaxation of the Ni3Al-x at.% B grain boundary.During relaxation of impure Ni3Al grain boundaries,we suggest that for different types of impure atoms(Mg,B,Cr and Zr atoms etc.),as the segregating species,they have the different behaviors,but as the inducing species,they have the same behaviors,i.e.they all induce Ni atoms to substitute Al atoms.Calculations show that at the equilibrium.when x(the B bulk concentration) increases from 0.1 to 0.9,the peak concentration of B increases,correspondently,the peak concentration of Ni maximizes but the valley concentration of Al minimizes,at x=0.5,The calculations also show the approximate saturation of Ni at the grain boundary at x=0.5. 展开更多
关键词 镍铝基合金 硼原子 镁原子 物理行为 蒙特卡罗模拟 物理性能
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Effect of Hydrogen Implantation on SIMOX SOI Materials
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作者 易万兵 陈静 +2 位作者 陈猛 王曦 邹世昌 《Chinese Physics Letters》 SCIE CAS CSCD 2004年第1期149-152,共4页
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Effects of Heat Treatment on Luminescence of Er-Doped Silicon-Rich SiO2 Prepared by rf Co-sputtering
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作者 ZHANGChang-Shen XIAOHai-Bo CHENZhi-Jun CHENGXin-Li ZHANGFeng 《Chinese Physics Letters》 SCIE CAS CSCD 2004年第7期1333-1336,共4页
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Computer Simulation for the Formation of the Insulator Layer of Silicon—on—Insulator Devices by N^+ and O^+ Co—implantation
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作者 林青 刘相华 《Chinese Physics Letters》 SCIE CAS CSCD 2002年第12期1782-1784,共3页
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Silicon-on-Insulating Multi-Layers for Total-Dose Irradiation Hardness
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作者 张恩霞 易万兵 +3 位作者 刘相华 陈猛 刘忠立 王曦 《Chinese Physics Letters》 SCIE CAS CSCD 2004年第8期1600-1603,共4页
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