This tutorial will cover the basic failure mechanisms of all semiconductor devices and the recent development in this field. Back to 1980,I was mentioned that from reliability point of view,'Any semiconductor devi...This tutorial will cover the basic failure mechanisms of all semiconductor devices and the recent development in this field. Back to 1980,I was mentioned that from reliability point of view,'Any semiconductor devices & ICs can be considered as a system'.Near 30 years passed,device size reduced from 1.0-3.0μm down to 10-30 nm,devices and ICs have became systems.Today,I like to propose that any devices & ICs can be considered as a semiconductor building.展开更多
文摘为了在兼顾特征频率(fT)和电流增益(β)的情况下有效提高器件的击穿电压(BVCBO/BVCEO),利用SILVACO TCAD建立了npn型超结集电区Si Ge异质结双极晶体管(heterojunction bipolar transistor,HBT)的器件模型.研究表明:通过在集电结空间电荷区(collector-base space charge region,CB SCR)内引入p型超结层可有效降低"死区"内的电场强度,使较高的电场强度转移至"死区"外较深的CB SCR内,进而在几乎不增加CB SCR宽度的情况下抑制碰撞电离,达到提高击穿电压、改善fT和β的目的.随着p型超结层厚度(dp)的增加,击穿电压BVCBO和BVCEO的改善也越明显.但dp值需优化,较大的dp值将引发Kirk效应,大幅降低器件的fT和β.进一步通过优化p型超结层的dp值,设计出一款dp为0.2μm且具有高频高压大电流优值(fT×BVCEO×β)的新型超结集电区Si Ge HBT.结果表明:与传统Si Ge HBT相比,新器件的fT×BVCEO×β优值改善高达35.5%,有效拓展了功率Si Ge HBT的高压大电流工作范围.
文摘This tutorial will cover the basic failure mechanisms of all semiconductor devices and the recent development in this field. Back to 1980,I was mentioned that from reliability point of view,'Any semiconductor devices & ICs can be considered as a system'.Near 30 years passed,device size reduced from 1.0-3.0μm down to 10-30 nm,devices and ICs have became systems.Today,I like to propose that any devices & ICs can be considered as a semiconductor building.
