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Effects of bismuth on growth of intermetallic compounds in Sn-Ag-Cu Pb-free solder joints 被引量:16
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作者 LI Guo-yuan SHI Xun-qing 《中国有色金属学会会刊:英文版》 CSCD 2006年第B02期739-743,共5页
The effects of Bi addition on the growth of intermetallic compound (IMC) formation in Sn-3.8Ag-0.7Cu solder joints were investigated. The test samples were prepared by conventional surface mounting technology. To inve... The effects of Bi addition on the growth of intermetallic compound (IMC) formation in Sn-3.8Ag-0.7Cu solder joints were investigated. The test samples were prepared by conventional surface mounting technology. To investigate the element diffusion and the growth kinetics of intermetallics formation in solder joint, isothermal aging test was performed at temperatures of 100, 150, and 190℃, respectively. The optical microscope (OM) and scanning electron microscope (SEM) were used to observe microstructure evolution of solder joint and to estimate the thickness and the grain size of the intermetallic layers. The IMC phases were identified by energy dispersive X-ray (EDX) and X-ray diffractometer (XRD). The results clearly show that adding about 1.0% Bi in Sn-Ag-Cu solder alloy system can refine the grain size of the IMC and inhibit the excessive IMC growth in solder joints, and therefore improve the reliability of the Pb-free solder joints. Through observation of the microstructural evolution of the solder joints, the mechanism of inhibition of IMC growth due to Bi addition was proposed. 展开更多
关键词 Sn-Ag-Cu合金 无铅焊料 焊接接头 金属间化合物
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Temperature self-adaptive program algorithm on 65nm MLC NOR flash memory
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作者 史维华 洪志良 +1 位作者 胡潮红 亢勇 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第8期160-163,共4页
This paper presents an implementation for improving muti-level cell NOR flash memory program through-put based on the channel hot electron (CHE) temperature characteristic. The CHE Ig temperature characteristic is a... This paper presents an implementation for improving muti-level cell NOR flash memory program through-put based on the channel hot electron (CHE) temperature characteristic. The CHE Ig temperature characteristic is analyzed theoretically with the Lucky electron model, and a temperature self-adaptive programming algorithm is proposed to increase Ig according to the on-die temperature. Experimental results show that the program throughput increases significantly from 1.1 MByte/s without temperature self-adaptive programming to 1.4 MByte/s with the proposed method at room temperature. This represents a 30% improvement and is 70 times faster than the program throughput in Ref. [1]. 展开更多
关键词 temperature self-adaptive programming 65 nm multi-level cell flash memory program throughput
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