Graphene-based resistive random access memory （GRRAM） has grasped researchers＇ attention due to its merits com- pared with ordinary RRAM. In this paper, we briefly review different types of GRRAMs. These GRRAMs can...Graphene-based resistive random access memory （GRRAM） has grasped researchers＇ attention due to its merits com- pared with ordinary RRAM. In this paper, we briefly review different types of GRRAMs. These GRRAMs can be divided into two categories： graphene RRAM and graphene oxide （GO）/reduced graphene oxide （rGO） RRAM. Using graphene as the electrode, GRRAM can own many good characteristics, such as low power consumption, higher density, transparency, SET voltage modulation, high uniformity, and so on. Graphene flakes sandwiched between two dielectric layers can lower the SET voltage and achieve multilevel switching. Moreover, the GRRAM with rGO and GO as the dielectric or electrode can be simply fabricated. Flexible and high performance RRAM and GO film can be modified by adding other materials layer or making a composite with polymer, nanoparticle, and 2D materials to further improve the performance. Above all, GRRAM shows huge potential to become the next generation memory.展开更多
A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demo...A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of I nA and the extremely high rectification ratio of 107. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots （GQDs） greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe2/Si heterojunction exhibits a high responsivity of -707 mA·W^-1, short response time of 0.2 ms, and good specific detectivity of -4.51×10^9 Jones. These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high- performance photodetectors.展开更多
A 32-bit pipeline accumulator with carry ripple topology is implemented for direct digital frequency synthesizer.To increase the throughout while hold down the area and power consumption,a method to reduce the number ...A 32-bit pipeline accumulator with carry ripple topology is implemented for direct digital frequency synthesizer.To increase the throughout while hold down the area and power consumption,a method to reduce the number of the pre-skewing registers is proposed.The number is reduced to 29% of a conventional pipeline accumulator.The propagation delay versus bias current of the adder circuit with different size transistors is investigated.We analyze the delay by employing the open circuit time constant method.Compared to the simulation results,the maximum error is less than 8%.A method to optimum the design of the adder based on the propagation delay is discussed.The clock traces for the 32-bit adder are heavily loaded,as there are 40 registers being connected to them.Moreover,the differential clock traces,which are much longer than the critical length,should be treated as transmission lines.Thus a clock distribution method and a termination scheme are proposed to get high quality and low skew clock signals.A multiple-type termination scheme is proposed to match the transmission line impedance.The 32-bit accumulator was measured to work functionally at 5.3 GHz.展开更多
This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm C...This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm CMOS process.The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/℃at a 0.8 V supply voltage over the temperature range of-35 to 85℃and a 0.1%variation in supply voltage from 0.8 to 3 V.Furthermore,the supply current is only 1.5μA at 0.8 V supply voltage.展开更多
We theoretically study the transparency and amplification of a weak probe field applied to the cavity in hybrid systems formed by a driven superconducting circuit QED system and a mechanical resonator,or a driven opto...We theoretically study the transparency and amplification of a weak probe field applied to the cavity in hybrid systems formed by a driven superconducting circuit QED system and a mechanical resonator,or a driven optomechanical system and a superconducting qubit.We find that both the mechanical resonator and the superconducting qubit can result in the transparency to a weak probe field in such hybrid systems when a strong driving field is applied to the cavity.We also find that the weak probe field can be amplified in some parameter regimes.We further study the statistical properties of the output field via the degrees of second-order coherence.We find that the nonclassicality of the output field strongly depends on the system parameters.Our studies show that one can control single-photon transmission in the optomechanical system via a tunable artificial atom or in the circuit QED system via a mechanical resonator.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574083 and 61434001)the National Basic Research Program of China(Grant No.2015CB352101)+4 种基金the National Key Research and Development Program of China(Grant No.2016YFA0200404)the National Key Project of Science and Technology of China(Grant No.2011ZX02403-002)Special Fund for Agroscientic Research in the Public Interest of China(Grant No.201303107)the Independent Research Program of Tsinghua University,China(Grant No.2014Z01006)Advanced Sensor and Integrated System Lab of Tsinghua University Graduate School at Shenzhen,China(Grant No.ZDSYS20140509172959969)
文摘Graphene-based resistive random access memory （GRRAM） has grasped researchers＇ attention due to its merits com- pared with ordinary RRAM. In this paper, we briefly review different types of GRRAMs. These GRRAMs can be divided into two categories： graphene RRAM and graphene oxide （GO）/reduced graphene oxide （rGO） RRAM. Using graphene as the electrode, GRRAM can own many good characteristics, such as low power consumption, higher density, transparency, SET voltage modulation, high uniformity, and so on. Graphene flakes sandwiched between two dielectric layers can lower the SET voltage and achieve multilevel switching. Moreover, the GRRAM with rGO and GO as the dielectric or electrode can be simply fabricated. Flexible and high performance RRAM and GO film can be modified by adding other materials layer or making a composite with polymer, nanoparticle, and 2D materials to further improve the performance. Above all, GRRAM shows huge potential to become the next generation memory.
文摘A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of I nA and the extremely high rectification ratio of 107. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots （GQDs） greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe2/Si heterojunction exhibits a high responsivity of -707 mA·W^-1, short response time of 0.2 ms, and good specific detectivity of -4.51×10^9 Jones. These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high- performance photodetectors.
基金supported by the National Basic Research Program of China (2010CB327505)
文摘A 32-bit pipeline accumulator with carry ripple topology is implemented for direct digital frequency synthesizer.To increase the throughout while hold down the area and power consumption,a method to reduce the number of the pre-skewing registers is proposed.The number is reduced to 29% of a conventional pipeline accumulator.The propagation delay versus bias current of the adder circuit with different size transistors is investigated.We analyze the delay by employing the open circuit time constant method.Compared to the simulation results,the maximum error is less than 8%.A method to optimum the design of the adder based on the propagation delay is discussed.The clock traces for the 32-bit adder are heavily loaded,as there are 40 registers being connected to them.Moreover,the differential clock traces,which are much longer than the critical length,should be treated as transmission lines.Thus a clock distribution method and a termination scheme are proposed to get high quality and low skew clock signals.A multiple-type termination scheme is proposed to match the transmission line impedance.The 32-bit accumulator was measured to work functionally at 5.3 GHz.
文摘This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm CMOS process.The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/℃at a 0.8 V supply voltage over the temperature range of-35 to 85℃and a 0.1%variation in supply voltage from 0.8 to 3 V.Furthermore,the supply current is only 1.5μA at 0.8 V supply voltage.
基金supported by the National Natural Science Foundation of China (Grant Nos. 10975080,61025022,61174084 and 61134008)
文摘We theoretically study the transparency and amplification of a weak probe field applied to the cavity in hybrid systems formed by a driven superconducting circuit QED system and a mechanical resonator,or a driven optomechanical system and a superconducting qubit.We find that both the mechanical resonator and the superconducting qubit can result in the transparency to a weak probe field in such hybrid systems when a strong driving field is applied to the cavity.We also find that the weak probe field can be amplified in some parameter regimes.We further study the statistical properties of the output field via the degrees of second-order coherence.We find that the nonclassicality of the output field strongly depends on the system parameters.Our studies show that one can control single-photon transmission in the optomechanical system via a tunable artificial atom or in the circuit QED system via a mechanical resonator.
