Rapid diagnosis of Salmonella is crucial for the effective control of food safety incidents, especially in regions with poor hygiene conditions. Polymerase chain reaction(PCR), as a promising tool for Salmonella detec...Rapid diagnosis of Salmonella is crucial for the effective control of food safety incidents, especially in regions with poor hygiene conditions. Polymerase chain reaction(PCR), as a promising tool for Salmonella detection, is facing a lack of simple and fast sensing methods that are compatible with field applications in resource-limited areas. In this work, we developed a sensing approach to identify PCR-amplified Salmonella genomic DNA with the naked eye in a snapshot. Based on the ratiometric fiuorescence signals from SYBR Green Ⅰ and Hydroxyl naphthol blue, positive samples stood out from negative ones with a distinct color pattern under UV exposure. The proposed sensing scheme enabled highly specific identification of Salmonella with a detection limit at the single-copy level. Also, as a supplement to the intuitive naked-eye visualization results, numerical analysis of the colored images was available with a smartphone app to extract RGB values from colored images. This work provides a simple, rapid, and user-friendly solution for PCR identification, which promises great potential in molecular diagnosis of Salmonella and other pathogens in field.展开更多
To realize the application of electromagnetic wave absorption(EWA)devices in humid marine environments,bifunctional EWA materials with better EWA capacities and anticorrosion properties have great exploration signific...To realize the application of electromagnetic wave absorption(EWA)devices in humid marine environments,bifunctional EWA materials with better EWA capacities and anticorrosion properties have great exploration significance and systematic research re-quirements.By utilizing the low-cost and excellent magnetic and stable chemical characteristics of barium ferrite(BaFe_(12)O_(19))and using the high dielectric loss and excellent chemical inertia of nanocarbon clusters,a new type of nanocomposites with carbon nanoclusters en-capsulating BaFe_(12)O_(19)was designed and synthesized by combining an impregnation method and a high-temperature calcination strategy.Furthermore,Ce-Mn ions were introduced into the BaFe_(12)O_(19)lattice to improve the dielectric and magnetic properties of BaFe_(12)O_(19)cores significantly,and the energy band structure of the doped lattice and the orders of Ce replacing Fe sites were calculated.Benefiting from Ce-Mn ion doping and carbon nanocluster encapsulation,the composite material exhibited excellent dual functionality of corrosion resist-ance and EWA.When BaCe_(0.2)Mn_(0.3)Fe_(11.5)O_(19)-C(BCM-C)was calcined at 600°C,the minimum reflection loss of-20.1 dB was achieved at 14.43 GHz.The Ku band’s effective absorption bandwidth of 4.25 GHz was achieved at an absorber thickness of only 1.3 mm.The BCM-C/polydimethylsiloxane coating had excellent corrosion resistance in the simulated marine environment(3.5wt%NaCl solution).The|Z|0.01Hz value of BCM-C remained at 106Ω·cm^(2)after 12 soaking days.The successful preparation of the BaFe_(12)O_(19)composite en-capsulated with carbon nanoclusters provides new insights into the preparation of multifunctional absorbent materials and the fabrication of absorbent devices applied in humid marine environments in the future.展开更多
In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate proces...In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.展开更多
Fractional-N phase-locked loops(PLLs)are widely deployed in high-speed communication systems to generate local oscillator(LO)or clock signals with precise frequency.To support sophisticated modulations for increasing ...Fractional-N phase-locked loops(PLLs)are widely deployed in high-speed communication systems to generate local oscillator(LO)or clock signals with precise frequency.To support sophisticated modulations for increasing the data rate,the PLL needs to generate low-jitter output[1].展开更多
High-entropy materials(HEMs)have attracted considerable research attention in battery applications due to exceptional properties such as remarkable structural stability,enhanced ionic conductivity,superior mechanical ...High-entropy materials(HEMs)have attracted considerable research attention in battery applications due to exceptional properties such as remarkable structural stability,enhanced ionic conductivity,superior mechanical strength,and outstanding catalytic activity.These distinctive characteristics render HEMs highly suitable for various battery components,such as electrodes,electrolytes,and catalysts.This review systematically examines recent advances in the application of HEMs for energy storage,beginning with fundamental concepts,historical development,and key definitions.Three principal categories of HEMs,namely high-entropy alloys,high-entropy oxides,and highentropy MXenes,are analyzed with a focus on electrochemical performance metrics such as specific capacity,energy density,cycling stability,and rate capability.The underlying mechanisms by which these materials enhance battery performance are elucidated in the discussion.Furthermore,the pivotal role of machine learning in accelerating the discovery and optimization of novel high-entropy battery materials is highlighted.The review concludes by outlining future research directions and potential breakthroughs in HEM-based battery technologies.展开更多
In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and S...In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and SnO are determined to be 2.65and 0.75 eV,respectively,through X-ray photoelectron spectroscopy,showing a type-Ⅱband alignment.Compared to its Schottky barrier diode(SBD)counterpart,the HJD presents a comparable specific ON-resistances(R_(on,sp))of 2.8 mΩ·cm^(2) and lower reverse leakage current(I_R),leading to an enhanced reverse blocking characteristics with breakdown voltage(BV)of 1675 V and power figure of merit(PFOM)of 1.0 GW/cm~2.This demonstrates the high quality of the SnO/β-Ga_(2)O_(3) heterojunction interface.Silvaco TCAD simulation further reveals that electric field crowding at the edge of anode for the SBD was greatly depressed by the introduction of SnO film,revealing the potential application of SnO/β-Ga_(2)O_(3) heterojunction in the futureβ-Ga_(2)O_(3)-based power devices.data mining,AI training,and similar technologies,are reserved.展开更多
Strained germanium hole spin qubits are promising for quantum computing,but the devices hosting these qubits face challenges from high interface trap density,which originates from the naturally oxidized surface of the...Strained germanium hole spin qubits are promising for quantum computing,but the devices hosting these qubits face challenges from high interface trap density,which originates from the naturally oxidized surface of the wafer.These traps can degrade the device stability and cause an excessively high threshold voltage.Surface passivation is regarded as an effective method to mitigate these impacts.In this study,we perform low-thermal-budget chemical passivation using the nitric acid oxidation of silicon method on the surface of strained germanium devices and investigate the impact of passivation on the device stability.The results demonstrate that surface passivation effectively reduces the interface defect density.This not only improves the stability of the device's threshold voltage but also enhances its long-term static stability.Furthermore,we construct a band diagram of hole surface tunneling at the static operating point to gain a deeper understanding of the physical mechanism through which passivation affects the device stability.This study provides valuable insights for future optimization of strained Ge-based quantum devices and advances our understanding of how interface states affect device stability.展开更多
Correction to:Nano-Micro Letters(2025)17:191 https://doi.org/10.1007/s40820-025-01702-7 Following the publication of the original article[1],the authors reported an error in Fig.3(b),and the figure legend was reversed...Correction to:Nano-Micro Letters(2025)17:191 https://doi.org/10.1007/s40820-025-01702-7 Following the publication of the original article[1],the authors reported an error in Fig.3(b),and the figure legend was reversed.The correct Fig.3 has been provided in this orrection.展开更多
Alloy engineering,with its ability to tune the electronic band structure,is regarded as an effective method for adjusting the electronic and optoelectronic properties of two-dimensional(2D)semiconductors.However,synth...Alloy engineering,with its ability to tune the electronic band structure,is regarded as an effective method for adjusting the electronic and optoelectronic properties of two-dimensional(2D)semiconductors.However,synthesizing metal-site substitution alloys remains challenging due to the low reactivity of metal precursors and the tendency for spatial phase separation during high-temperature growth.Here,we report the preparation of a high-quality metal-site substitution alloy,Zn_(0.167)Sn_(0.833)S_(2),via the chemical vapor transport method,which exhibits excellent photoresponsivity and enhanced electrical transport properties.Comprehensive characterization techniques,including Raman spectroscopy,x-ray photoelectron spectroscopy(XPS),and electron microscopy,unambiguously confirm the uniform Zn substitution in the as-prepared Zn_(0.167)Sn_(0.833)S_(2) alloy.Furthermore,the photodetector based on the Zn_(0.167)Sn_(0.833)S_(2) alloy demonstrated a high on/off ratio of 51 under white light,a wide spectral response range from 350 nm to 900 nm,and a broad dynamic power range of 80 dB under 638-nm illumination.In terms of transport properties,field-effect transistors(FETs)based on Zn_(0.167)Sn_(0.833)S_(2) achieved a carrier mobility of 6.5 cm^(2)·V^(-1)·s^(-1),which is six times higher than that of SnS_(2).This alloy semiconductor showcases significantly enhanced electronic and optoelectronic properties,offering great potential for the development of high-resolution photodetection technologies.展开更多
The novel HfO2-based ferroelectric field effect transistor(FeFET)is considered a promising candidate for next-genera-tion nonvolatile memory(NVM).However,a series of reliability issues caused by the fatigue effect hin...The novel HfO2-based ferroelectric field effect transistor(FeFET)is considered a promising candidate for next-genera-tion nonvolatile memory(NVM).However,a series of reliability issues caused by the fatigue effect hinder its further develop-ment.Therefore,a comprehensive understanding of the fatigue mechanisms of the device and optimization strategies is essen-tial for its application.The fundamental mechanism of the fatigue effect is attributed to charge trapping and trap generation based on the current studies,and the underlying causes,occurrence locations and specific impacts are analyzed in this review.In particular,the asymmetric trapping/detrapping of electrons and holes,as well as the relationship between the ferroelectric(FE)polarization and charge trapping,are given particular attention.After categorizing and summarizing the current progress,we propose a series of optimization strategies derived based on the fatigue mechanisms.展开更多
Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circ...Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circuits.Although MRAM has achieved mass production,its manufacturing process still remains challenging,resulting in only a few semiconductor companies dominating its production.In this review,we delve into the materials,processes,and devices used in MRAM,focusing on both the widely adopted spin transfer torque MRAM and the next-generation spin-orbit torque MRAM.We provide an overview of their operational mechanisms and manufacturing technologies.Furthermore,we outline the major hurdles faced in MRAM manufacturing and propose potential solutions in detail.Then,the applications of MRAM in artificial intelligent hardware are introduced.Finally,we present an outlook on the future development and applications of MRAM.展开更多
Silicon nitride(Si_(3)N_(4))photonic platform has recently attracted increasing attention for Si_(3)N_(4) photonic integrated circuits(PIC).A diffraction grating with the only etched top-layer in tri-layer Si3N4 optic...Silicon nitride(Si_(3)N_(4))photonic platform has recently attracted increasing attention for Si_(3)N_(4) photonic integrated circuits(PIC).A diffraction grating with the only etched top-layer in tri-layer Si3N4 optical waveguides is proposed,which shows a simple fabrication process,high upward diffraction efficiency,and lower far-field divergence angle.The measured results of the diffraction grating at a wavelength of 905 nm show the average upward diffraction efficiency of 90.5% and average far-field divergence angle of 0.154°,which shows a good agreement with the design results with the upward diffraction efficiency of 91.6%and far-field divergence angle of 0.105°.展开更多
The extensive applications of cubic silicon in flexible transistors and infrared detectors are greatly hindered by its intrinsic properties.Metastable silicon phases,such as Si-Ⅲ,Ⅳ,andⅫ,prepared using extreme press...The extensive applications of cubic silicon in flexible transistors and infrared detectors are greatly hindered by its intrinsic properties.Metastable silicon phases,such as Si-Ⅲ,Ⅳ,andⅫ,prepared using extreme pressure methods,provide a unique“genetic bank”with diverse structures and exotic characteristics.However,exploration of their inherent physical properties remains underdeveloped.Herein,we demonstrate the phase engineering strategy to modulate the thermal conductivity and mechanical properties of metastable silicon.The thermal conductivity,obtained via the Raman optothermal approach,exhibits broad tunability across various Si-Ⅰ,Ⅲ,Ⅻ,andⅣphases.The hardness and Young's modulus of Si-Ⅳare significantly greater than those of the Si-Ⅲ/Ⅻmixture,as confirmed by the nanoindentation technique.Moreover,it was found that pressure-induced structural defects can substantially degrade the thermal and mechanical properties of silicon.This systematic investigation offers a feasible route for designing novel semiconductors and further advancing their desirable applications in advanced nanodevices and mechanical transducers.展开更多
Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of ...Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to rise.The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://irds.ieee.org/),but not publicly confirmed,indicating that more possibilities still exist.The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and speed.In this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and performances.And then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint.Under these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power consumption.This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”nodes.At the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power consumption.Further,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V CPUs.This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.展开更多
This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) unde...This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) under high linear energy transfer heavyion experimentation.The experimental findings demonstrate that applying a negative back-gate bias to NMOS and a positive back-gate bias to PMOS enhances the SEU resistance of SRAM.Specifically,as the back-gate bias for N-type transistors(V_(nsoi)) decreases from 0 to-10 V,the SEU cross section decreases by 93.23%,whereas an increase in the back-gate bias for P-type transistors (V_(psoi)) from 0 to 10 V correlates with an 83.7%reduction in SEU cross section.Furthermore,a significant increase in the SEU cross section was observed with increase in supply voltage,as evidenced by a 159%surge at V_(DD)=1.98 V compared with the nominal voltage of 1.8 V.To explore the physical mechanisms underlying these experimental data,we analyzed the dependence of the critical charge of the circuit and the collected charge on the bias voltage by simulating SEUs using technology computer-aided design.展开更多
In semiconductor quantum dot systems,pulse distortion is a significant source of coherent errors,which impedes qubit characterization and control.Here,we demonstrate two calibration methods using a two-qubit system as...In semiconductor quantum dot systems,pulse distortion is a significant source of coherent errors,which impedes qubit characterization and control.Here,we demonstrate two calibration methods using a two-qubit system as the detector to correct distortion and calibrate the transfer function of the control line.Both methods are straightforward to implement,robust against noise,and applicable to a wide range of qubit types.The two methods differ in correction accuracy and complexity.The first,coarse predistortion(CPD)method,partially mitigates distortion.The second,all predistortion(APD)method,measures the transfer function and significantly enhances exchange oscillation uniformity.Both methods use exchange oscillation homogeneity as the metric and are suitable for any qubit driven by a diabatic pulse.We believe these methods will enhance qubit characterization accuracy and operation quality in future applications.展开更多
Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s law.Two-dimensional(2D)materials have emerged as highly promising candidates for t...Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s law.Two-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation computing.Here,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given first.Then 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are discussed.Moreover,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are introduced.Finally,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.展开更多
The high-quality gate dielectric on silicon carbide(SiC)surface is critical to fabricate high-performance SiC metal-oxide-semiconductor field-effect transistors(MOSFETs).This research employs microwave plasma annealin...The high-quality gate dielectric on silicon carbide(SiC)surface is critical to fabricate high-performance SiC metal-oxide-semiconductor field-effect transistors(MOSFETs).This research employs microwave plasma annealing(MPA)to obtain high-quality Al_(2)O_(3)/SiC gate stacks.By designing MPA atmosphere and optimizing the plasma power,the SiC MOS capacitor with a Al_(2)O_(3)dielectric film shows the enhanced performance.The interface state density is reduced by 1 order of magnitude to 6×10^(11)cm^(-2)·eV^(-1),the breakdown electric field is increased,and the voltage shift is effectively suppressed Besides,the mechanism of MPA process is discussed in terms of the thermal effect and reactant species.X-ray photoelectron spectroscopy(XPS)results unveil oxygen plasma plays the main role.Optimal plasma power during the MPA process results in defect repairs of the firstneighbor Al-O bonding and partial removal of Al-O-H bond from the interface region.This study demonstrates that MPA process is an effective option to realize highquality dielectric and interface on SiC.展开更多
Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry.To compete with wire-sawing and mechanical grinding technology,a promis-ing approach...Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry.To compete with wire-sawing and mechanical grinding technology,a promis-ing approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC.Significant material utiliza-tion has been achieved in the hybrid laser processes,where material loss is reduced by 75%compared to that of conventional machining technologies.Without any special process control or additional treat-ment,an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about∼3.6 MPa.The modified layer has been characterized using a micro-Raman method to determine residual stress.The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology,with an average surface roughness of over S_(a) 0.89μm.An amorphous phase surrounds the SiC substrate,with two dimensions of lattice spacing,d=0.261 nm and d=0.265 nm,confirmed by high-resolution transmission electron microscopy(HRTEM).The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than S_(a) 0.22μm.Due to the extreme cooling rates and multiple thermal cy-cles,dissociation of Si-C bonding,and phase separation are identified on the laser-polished surface,which is much better than that of the machining surface.We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.展开更多
The Chinese express delivery industry processes nearly 110 billion items in 2022,averaging an annual growth rate of 200%.Among the various types of sorting systems used for handling express items,cross-belt sorting sy...The Chinese express delivery industry processes nearly 110 billion items in 2022,averaging an annual growth rate of 200%.Among the various types of sorting systems used for handling express items,cross-belt sorting systems stand out as the most crucial.However,despite their high degree of automation,the workload for operators has intensified owing to the surging volume of express items.In the era of Industry 5.0,it is imperative to adopt new technologies that not only enhance worker welfare but also improve the efficiency of cross-belt systems.Striking a balance between efficiency in handling express items and operator well-being is challenging.Digital twin technology offers a promising solution in this respect.A realization method of a human-machine integrated digital twin is proposed in this study,enabling the interaction of biological human bodies,virtual human bodies,virtual equipment,and logistics equipment in a closed loop,thus setting an operating framework.Key technologies in the proposed framework include a collection of heterogeneous data from multiple sources,construction of the relationship between operator fatigue and operation efficiency based on physiological measurements,virtual model construction,and an online optimization module based on real-time simulation.The feasibility of the proposed method was verified in an express distribution center.展开更多
基金supported by the Macao Science and Technology Development Fund(FDCT)(Nos.FDCT 0029/2021/A1,FDCT0002/2021/AKP,004/2023/SKL,0036/2021/APD)University of Macao(No.MYRG-GRG2023-00034-IME,SRG2024-00057IME)+2 种基金Dr.Stanley Ho Medical Development Foundation(No.SHMDF-OIRFS/2024/001)Zhuhai Huafa Group(No.HF-006-2021)Guangdong Science and Technology Department(No.2022A0505030022)。
文摘Rapid diagnosis of Salmonella is crucial for the effective control of food safety incidents, especially in regions with poor hygiene conditions. Polymerase chain reaction(PCR), as a promising tool for Salmonella detection, is facing a lack of simple and fast sensing methods that are compatible with field applications in resource-limited areas. In this work, we developed a sensing approach to identify PCR-amplified Salmonella genomic DNA with the naked eye in a snapshot. Based on the ratiometric fiuorescence signals from SYBR Green Ⅰ and Hydroxyl naphthol blue, positive samples stood out from negative ones with a distinct color pattern under UV exposure. The proposed sensing scheme enabled highly specific identification of Salmonella with a detection limit at the single-copy level. Also, as a supplement to the intuitive naked-eye visualization results, numerical analysis of the colored images was available with a smartphone app to extract RGB values from colored images. This work provides a simple, rapid, and user-friendly solution for PCR identification, which promises great potential in molecular diagnosis of Salmonella and other pathogens in field.
基金supported by the National Key R&D Program of China(Nos.2022YFB3504804 and 2023YFF0718303)the National Natural Science Foundation of China(Nos.51871219,52071324,52031014,and 52401255)+1 种基金Science and Technology Project of Shenyang City(No.22-101-0-27)Liaoning Institute of Science and Technology Doctoral Initiation Fund Project(No.2307B19).
文摘To realize the application of electromagnetic wave absorption(EWA)devices in humid marine environments,bifunctional EWA materials with better EWA capacities and anticorrosion properties have great exploration significance and systematic research re-quirements.By utilizing the low-cost and excellent magnetic and stable chemical characteristics of barium ferrite(BaFe_(12)O_(19))and using the high dielectric loss and excellent chemical inertia of nanocarbon clusters,a new type of nanocomposites with carbon nanoclusters en-capsulating BaFe_(12)O_(19)was designed and synthesized by combining an impregnation method and a high-temperature calcination strategy.Furthermore,Ce-Mn ions were introduced into the BaFe_(12)O_(19)lattice to improve the dielectric and magnetic properties of BaFe_(12)O_(19)cores significantly,and the energy band structure of the doped lattice and the orders of Ce replacing Fe sites were calculated.Benefiting from Ce-Mn ion doping and carbon nanocluster encapsulation,the composite material exhibited excellent dual functionality of corrosion resist-ance and EWA.When BaCe_(0.2)Mn_(0.3)Fe_(11.5)O_(19)-C(BCM-C)was calcined at 600°C,the minimum reflection loss of-20.1 dB was achieved at 14.43 GHz.The Ku band’s effective absorption bandwidth of 4.25 GHz was achieved at an absorber thickness of only 1.3 mm.The BCM-C/polydimethylsiloxane coating had excellent corrosion resistance in the simulated marine environment(3.5wt%NaCl solution).The|Z|0.01Hz value of BCM-C remained at 106Ω·cm^(2)after 12 soaking days.The successful preparation of the BaFe_(12)O_(19)composite en-capsulated with carbon nanoclusters provides new insights into the preparation of multifunctional absorbent materials and the fabrication of absorbent devices applied in humid marine environments in the future.
基金Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012).
文摘In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.
基金supported by the University of Macao Research Fund under Grant MYRG-GRG2024-00298-IMEby the Macao Science and Technology Development Fund(FDCT)under Grant 0103/2022/AFJ.
文摘Fractional-N phase-locked loops(PLLs)are widely deployed in high-speed communication systems to generate local oscillator(LO)or clock signals with precise frequency.To support sophisticated modulations for increasing the data rate,the PLL needs to generate low-jitter output[1].
基金supported by the Fujian Provincial Science and Technology Planning Project(No.2022HZ027006,No.2024HZ021023)National Natural Science Foundation of China(No.U22A20118).
文摘High-entropy materials(HEMs)have attracted considerable research attention in battery applications due to exceptional properties such as remarkable structural stability,enhanced ionic conductivity,superior mechanical strength,and outstanding catalytic activity.These distinctive characteristics render HEMs highly suitable for various battery components,such as electrodes,electrolytes,and catalysts.This review systematically examines recent advances in the application of HEMs for energy storage,beginning with fundamental concepts,historical development,and key definitions.Three principal categories of HEMs,namely high-entropy alloys,high-entropy oxides,and highentropy MXenes,are analyzed with a focus on electrochemical performance metrics such as specific capacity,energy density,cycling stability,and rate capability.The underlying mechanisms by which these materials enhance battery performance are elucidated in the discussion.Furthermore,the pivotal role of machine learning in accelerating the discovery and optimization of novel high-entropy battery materials is highlighted.The review concludes by outlining future research directions and potential breakthroughs in HEM-based battery technologies.
基金supported by the National Natural Science Foundation of China(NSFC,No.62074048)the Key Research and Development Plan of Anhui Province(No.2022f04020007)the Natural Science Foundation of Anhui Province(No.2208085MF177)。
文摘In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and SnO are determined to be 2.65and 0.75 eV,respectively,through X-ray photoelectron spectroscopy,showing a type-Ⅱband alignment.Compared to its Schottky barrier diode(SBD)counterpart,the HJD presents a comparable specific ON-resistances(R_(on,sp))of 2.8 mΩ·cm^(2) and lower reverse leakage current(I_R),leading to an enhanced reverse blocking characteristics with breakdown voltage(BV)of 1675 V and power figure of merit(PFOM)of 1.0 GW/cm~2.This demonstrates the high quality of the SnO/β-Ga_(2)O_(3) heterojunction interface.Silvaco TCAD simulation further reveals that electric field crowding at the edge of anode for the SBD was greatly depressed by the introduction of SnO film,revealing the potential application of SnO/β-Ga_(2)O_(3) heterojunction in the futureβ-Ga_(2)O_(3)-based power devices.data mining,AI training,and similar technologies,are reserved.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.92265113,12034018,12474490,and 62404248)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302300)。
文摘Strained germanium hole spin qubits are promising for quantum computing,but the devices hosting these qubits face challenges from high interface trap density,which originates from the naturally oxidized surface of the wafer.These traps can degrade the device stability and cause an excessively high threshold voltage.Surface passivation is regarded as an effective method to mitigate these impacts.In this study,we perform low-thermal-budget chemical passivation using the nitric acid oxidation of silicon method on the surface of strained germanium devices and investigate the impact of passivation on the device stability.The results demonstrate that surface passivation effectively reduces the interface defect density.This not only improves the stability of the device's threshold voltage but also enhances its long-term static stability.Furthermore,we construct a band diagram of hole surface tunneling at the static operating point to gain a deeper understanding of the physical mechanism through which passivation affects the device stability.This study provides valuable insights for future optimization of strained Ge-based quantum devices and advances our understanding of how interface states affect device stability.
基金supported in part by STI 2030-Major Projects under Grant 2022ZD0209200in part by Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund (L233009)+4 种基金in part by National Natural Science Foundation of China under Grant No. 62374099in part by the Tsinghua-Toyota Joint Research Fundin part by the Daikin Tsinghua Union Programin part by Independent Research Program of School of Integrated Circuits,Tsinghua Universitysponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Program
文摘Correction to:Nano-Micro Letters(2025)17:191 https://doi.org/10.1007/s40820-025-01702-7 Following the publication of the original article[1],the authors reported an error in Fig.3(b),and the figure legend was reversed.The correct Fig.3 has been provided in this orrection.
基金supported by the Beijing Natural Science Foundation(Grant No.Z220005)the National Key Research and Development Program of China(Grant Nos.2022YFB3606902 and 2022YFA1405600)+1 种基金the National Natural Science Foundation of China(Grant No.12274456)the Opening Project of the Laboratory of Microelectronic Devices&Integrated Technology,Chinese Academy of Sciences(CAS),Institute of Microelectronics,Chinese Academy of Sciences.
文摘Alloy engineering,with its ability to tune the electronic band structure,is regarded as an effective method for adjusting the electronic and optoelectronic properties of two-dimensional(2D)semiconductors.However,synthesizing metal-site substitution alloys remains challenging due to the low reactivity of metal precursors and the tendency for spatial phase separation during high-temperature growth.Here,we report the preparation of a high-quality metal-site substitution alloy,Zn_(0.167)Sn_(0.833)S_(2),via the chemical vapor transport method,which exhibits excellent photoresponsivity and enhanced electrical transport properties.Comprehensive characterization techniques,including Raman spectroscopy,x-ray photoelectron spectroscopy(XPS),and electron microscopy,unambiguously confirm the uniform Zn substitution in the as-prepared Zn_(0.167)Sn_(0.833)S_(2) alloy.Furthermore,the photodetector based on the Zn_(0.167)Sn_(0.833)S_(2) alloy demonstrated a high on/off ratio of 51 under white light,a wide spectral response range from 350 nm to 900 nm,and a broad dynamic power range of 80 dB under 638-nm illumination.In terms of transport properties,field-effect transistors(FETs)based on Zn_(0.167)Sn_(0.833)S_(2) achieved a carrier mobility of 6.5 cm^(2)·V^(-1)·s^(-1),which is six times higher than that of SnS_(2).This alloy semiconductor showcases significantly enhanced electronic and optoelectronic properties,offering great potential for the development of high-resolution photodetection technologies.
基金supported in part by the National Natural Science Foundation of China(NSFC)under Grant 62304246,62404246,62425407the Ministry of Science and Technology(MOST)of China under Grant 2022YFB3608400+1 种基金the Young Elite Scientists Sponsorship Program by the China Association for Science and Technology(CAST)under Grant 2022QNRC001the Youth Innovation Promotion Association of Chinese Academy of Sciences under Grant 2020120,2023127.
文摘The novel HfO2-based ferroelectric field effect transistor(FeFET)is considered a promising candidate for next-genera-tion nonvolatile memory(NVM).However,a series of reliability issues caused by the fatigue effect hinder its further develop-ment.Therefore,a comprehensive understanding of the fatigue mechanisms of the device and optimization strategies is essen-tial for its application.The fundamental mechanism of the fatigue effect is attributed to charge trapping and trap generation based on the current studies,and the underlying causes,occurrence locations and specific impacts are analyzed in this review.In particular,the asymmetric trapping/detrapping of electrons and holes,as well as the relationship between the ferroelectric(FE)polarization and charge trapping,are given particular attention.After categorizing and summarizing the current progress,we propose a series of optimization strategies derived based on the fatigue mechanisms.
基金supported in part by the Youth Innovation Promotion Association of Chinese Academy of Sciences(CAS)under Grant 2020118Beijing Nova Program under Grant 20230484358Beijing Superstring Academy of Memory Technology:under Grant No.E2DF06X003。
文摘Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circuits.Although MRAM has achieved mass production,its manufacturing process still remains challenging,resulting in only a few semiconductor companies dominating its production.In this review,we delve into the materials,processes,and devices used in MRAM,focusing on both the widely adopted spin transfer torque MRAM and the next-generation spin-orbit torque MRAM.We provide an overview of their operational mechanisms and manufacturing technologies.Furthermore,we outline the major hurdles faced in MRAM manufacturing and propose potential solutions in detail.Then,the applications of MRAM in artificial intelligent hardware are introduced.Finally,we present an outlook on the future development and applications of MRAM.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFB2802401)the Beijing Municipal Natural Science Foundation(Grant No.Z221100006722002).
文摘Silicon nitride(Si_(3)N_(4))photonic platform has recently attracted increasing attention for Si_(3)N_(4) photonic integrated circuits(PIC).A diffraction grating with the only etched top-layer in tri-layer Si3N4 optical waveguides is proposed,which shows a simple fabrication process,high upward diffraction efficiency,and lower far-field divergence angle.The measured results of the diffraction grating at a wavelength of 905 nm show the average upward diffraction efficiency of 90.5% and average far-field divergence angle of 0.154°,which shows a good agreement with the design results with the upward diffraction efficiency of 91.6%and far-field divergence angle of 0.105°.
基金supported by the National Natural Science Foundation of China(Grant Nos.52472040,52072032,and 12090031)the 173 JCJQ program(Grant No.2021JCJQ-JJ-0159)。
文摘The extensive applications of cubic silicon in flexible transistors and infrared detectors are greatly hindered by its intrinsic properties.Metastable silicon phases,such as Si-Ⅲ,Ⅳ,andⅫ,prepared using extreme pressure methods,provide a unique“genetic bank”with diverse structures and exotic characteristics.However,exploration of their inherent physical properties remains underdeveloped.Herein,we demonstrate the phase engineering strategy to modulate the thermal conductivity and mechanical properties of metastable silicon.The thermal conductivity,obtained via the Raman optothermal approach,exhibits broad tunability across various Si-Ⅰ,Ⅲ,Ⅻ,andⅣphases.The hardness and Young's modulus of Si-Ⅳare significantly greater than those of the Si-Ⅲ/Ⅻmixture,as confirmed by the nanoindentation technique.Moreover,it was found that pressure-induced structural defects can substantially degrade the thermal and mechanical properties of silicon.This systematic investigation offers a feasible route for designing novel semiconductors and further advancing their desirable applications in advanced nanodevices and mechanical transducers.
基金supported in part by STI 2030-Major Projects under Grant 2022ZD0209200in part by Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(L233009)+4 种基金in part by National Natural Science Foundation of China under Grant No.62374099in part by the Tsinghua-Toyota Joint Research Fundin part by the Daikin Tsinghua Union Programin part by Independent Research Program of School of Integrated Circuits,Tsinghua UniversityThis work was also sponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Program.
文摘Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to rise.The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://irds.ieee.org/),but not publicly confirmed,indicating that more possibilities still exist.The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and speed.In this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and performances.And then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint.Under these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power consumption.This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”nodes.At the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power consumption.Further,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V CPUs.This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.
基金supported by the National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment(No.6142910220208)National Natural Science Foundation of China(Nos.12105341 and 12035019)the opening fund of Key Laboratory of Silicon Device and Technology,Chinese Academy of Sciences(No.KLSDTJJ2022-3).
文摘This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) under high linear energy transfer heavyion experimentation.The experimental findings demonstrate that applying a negative back-gate bias to NMOS and a positive back-gate bias to PMOS enhances the SEU resistance of SRAM.Specifically,as the back-gate bias for N-type transistors(V_(nsoi)) decreases from 0 to-10 V,the SEU cross section decreases by 93.23%,whereas an increase in the back-gate bias for P-type transistors (V_(psoi)) from 0 to 10 V correlates with an 83.7%reduction in SEU cross section.Furthermore,a significant increase in the SEU cross section was observed with increase in supply voltage,as evidenced by a 159%surge at V_(DD)=1.98 V compared with the nominal voltage of 1.8 V.To explore the physical mechanisms underlying these experimental data,we analyzed the dependence of the critical charge of the circuit and the collected charge on the bias voltage by simulating SEUs using technology computer-aided design.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12074368,92165207,12474490,12034018,and 92265113)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302300)+1 种基金the USTC Tang Scholarshippartially carried out at the USTC Center for Micro and Nanoscale Research and Fabrication。
文摘In semiconductor quantum dot systems,pulse distortion is a significant source of coherent errors,which impedes qubit characterization and control.Here,we demonstrate two calibration methods using a two-qubit system as the detector to correct distortion and calibrate the transfer function of the control line.Both methods are straightforward to implement,robust against noise,and applicable to a wide range of qubit types.The two methods differ in correction accuracy and complexity.The first,coarse predistortion(CPD)method,partially mitigates distortion.The second,all predistortion(APD)method,measures the transfer function and significantly enhances exchange oscillation uniformity.Both methods use exchange oscillation homogeneity as the metric and are suitable for any qubit driven by a diabatic pulse.We believe these methods will enhance qubit characterization accuracy and operation quality in future applications.
基金supported in part by STI 2030-Major Projects under Grant 2022ZD0209200sponsored by Tsinghua-Toyota Joint Research Fund+12 种基金in part by National Natural Science Foundation of China under Grant 62374099, Grant 62022047, Grant U20A20168, Grant 51861145202, Grant 51821003, and Grant 62175219in part by the National Key R&D Program under Grant 2016YFA0200400in part by Beijing Natural Science-Xiaomi Innovation Joint Fund Grant L233009in part supported by Tsinghua University-Zhuhai Huafa Industrial Share Company Joint Institute for Architecture Optoelectronic Technologies (JIAOT KF202204)in part by the Daikin-Tsinghua Union Programin part sponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Programin part by the Guoqiang Institute, Tsinghua Universityin part by the Research Fund from Beijing Innovation Center for Future Chipin part by Shanxi “1331 Project” Key Subjects Constructionin part by the Youth Innovation Promotion Association of Chinese Academy of Sciences (2019120)the opening fund of Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciencesin part by the project of MOE Innovation Platformin part by the State Key Laboratory of Integrated Chips and Systems
文摘Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s law.Two-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation computing.Here,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given first.Then 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are discussed.Moreover,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are introduced.Finally,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.
基金financially supported by Beijing Municipal Natural Science Foundation(No.4234091)the National Natural Science Foundation of China(Nos.62304245,61974159,62174176,62174122 and U2241244)+1 种基金the Scientific Instrument Developing Project of the Chinese Academy of Sciences(No.YJKYYQ20200039)the Out-standing Member Project of the Youth Innovation Promotion Association of CAS(No.Y2021046)。
文摘The high-quality gate dielectric on silicon carbide(SiC)surface is critical to fabricate high-performance SiC metal-oxide-semiconductor field-effect transistors(MOSFETs).This research employs microwave plasma annealing(MPA)to obtain high-quality Al_(2)O_(3)/SiC gate stacks.By designing MPA atmosphere and optimizing the plasma power,the SiC MOS capacitor with a Al_(2)O_(3)dielectric film shows the enhanced performance.The interface state density is reduced by 1 order of magnitude to 6×10^(11)cm^(-2)·eV^(-1),the breakdown electric field is increased,and the voltage shift is effectively suppressed Besides,the mechanism of MPA process is discussed in terms of the thermal effect and reactant species.X-ray photoelectron spectroscopy(XPS)results unveil oxygen plasma plays the main role.Optimal plasma power during the MPA process results in defect repairs of the firstneighbor Al-O bonding and partial removal of Al-O-H bond from the interface region.This study demonstrates that MPA process is an effective option to realize highquality dielectric and interface on SiC.
基金supported by National Natural Science Foundation of China(No.62304249)a project funded by China Postdoctoral Science Foundation(No.2023M733704).
文摘Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry.To compete with wire-sawing and mechanical grinding technology,a promis-ing approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC.Significant material utiliza-tion has been achieved in the hybrid laser processes,where material loss is reduced by 75%compared to that of conventional machining technologies.Without any special process control or additional treat-ment,an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about∼3.6 MPa.The modified layer has been characterized using a micro-Raman method to determine residual stress.The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology,with an average surface roughness of over S_(a) 0.89μm.An amorphous phase surrounds the SiC substrate,with two dimensions of lattice spacing,d=0.261 nm and d=0.265 nm,confirmed by high-resolution transmission electron microscopy(HRTEM).The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than S_(a) 0.22μm.Due to the extreme cooling rates and multiple thermal cy-cles,dissociation of Si-C bonding,and phase separation are identified on the laser-polished surface,which is much better than that of the machining surface.We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.
基金Supported by National Natural Science Foundation of China(Grant No.52075036)Key Technologies Research and Development Program of China(Grant No.2022YFC3302204).
文摘The Chinese express delivery industry processes nearly 110 billion items in 2022,averaging an annual growth rate of 200%.Among the various types of sorting systems used for handling express items,cross-belt sorting systems stand out as the most crucial.However,despite their high degree of automation,the workload for operators has intensified owing to the surging volume of express items.In the era of Industry 5.0,it is imperative to adopt new technologies that not only enhance worker welfare but also improve the efficiency of cross-belt systems.Striking a balance between efficiency in handling express items and operator well-being is challenging.Digital twin technology offers a promising solution in this respect.A realization method of a human-machine integrated digital twin is proposed in this study,enabling the interaction of biological human bodies,virtual human bodies,virtual equipment,and logistics equipment in a closed loop,thus setting an operating framework.Key technologies in the proposed framework include a collection of heterogeneous data from multiple sources,construction of the relationship between operator fatigue and operation efficiency based on physiological measurements,virtual model construction,and an online optimization module based on real-time simulation.The feasibility of the proposed method was verified in an express distribution center.
