The effects of self-heating and traps on the drain current transient responses of AlGaN/GaN HEMTs are studied by 2D numerical simulation. The variation of the drain current simulated by the drain turn-on pulses has be...The effects of self-heating and traps on the drain current transient responses of AlGaN/GaN HEMTs are studied by 2D numerical simulation. The variation of the drain current simulated by the drain turn-on pulses has been analyzed. Our results show that temperature is the main factor for the drain current lag. The time that the drain current takes to reach a steady state depends on the thermal time constant, which is 8μs in this case. The dynamics of the trapping of electron and channel electron density under drain turn-on pulse voltage are discussed in detail, which indicates that the accepter traps in the buffer are the major reason for the current collapse when the electric field significantly changes. The channel electron density has been shown to increase as the channel temperature rises.展开更多
The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward tren...The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage （VDs） is decreased. Moreover, the relatively low VDS and large drain-source current （IDs） result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081)the Beijing Natural Science Foundation(Nos.4132022,4122005)+1 种基金the Guangdong Strategic Emerging Industry Project of China(No.2012A080304003)the Doctoral Fund of Innovation of Beijing University of Technology
文摘The effects of self-heating and traps on the drain current transient responses of AlGaN/GaN HEMTs are studied by 2D numerical simulation. The variation of the drain current simulated by the drain turn-on pulses has been analyzed. Our results show that temperature is the main factor for the drain current lag. The time that the drain current takes to reach a steady state depends on the thermal time constant, which is 8μs in this case. The dynamics of the trapping of electron and channel electron density under drain turn-on pulse voltage are discussed in detail, which indicates that the accepter traps in the buffer are the major reason for the current collapse when the electric field significantly changes. The channel electron density has been shown to increase as the channel temperature rises.
基金Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081)the Beijing Natural Science Foundation(Nos.4132022,4122005)+1 种基金the Guangdong Strategic Emerging Industry Project of China(No.2012A080304003)the Doctoral Fund of Innovation of Beijing University of Technology
文摘The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage （VDs） is decreased. Moreover, the relatively low VDS and large drain-source current （IDs） result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance.
