Nonlinear dynamic study is undertaken of the response of atmospheric and oceanic flow fields to local thermal source forcing in the context of a generalized geophysical fluid dynamic barotropic quasi_geostrophic model...Nonlinear dynamic study is undertaken of the response of atmospheric and oceanic flow fields to local thermal source forcing in the context of a generalized geophysical fluid dynamic barotropic quasi_geostrophic model, discovering a good relation between thermal disturbance and flow field response to it, both having similar modes, and that the soliton_like responding field is a great deal larger in extent than the analogous_form forcing field, which implies that a 'narrow' thermal disturbance can excite a 'wide' response field, in some cases the particular structure of a thermal source may give rise to singular response of atmospheric and oceanic flow fields, thus displaying their abnormalities (for example the blocking situation in the atmosphere), the atmospheric and oceanic stream fields at mid_high latitudes respond to thermal forcing in a much more pronounced manner compared to those at low latitudes. The said research results that is in agreement with studies from mid_low latitude atmospheric experiments and observations and can be used to partially interpret the circulation singularity due to heat source anomaly on a local basis in the context of earch fluid flows.展开更多
We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process.It is found that with the conventi...We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process.It is found that with the conventional Ni silicide method,the leakage current of a p+ (SiGe)-n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method.The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film.In addition,the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film.As a result,the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology.展开更多
Negative bias temperature instability(NBTI)in ultrathin-plasma-nitrided-oxide(PNO)based p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)is investigated at temperatures ranging from 220 K to 470 K.It...Negative bias temperature instability(NBTI)in ultrathin-plasma-nitrided-oxide(PNO)based p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)is investigated at temperatures ranging from 220 K to 470 K.It is found that the threshold voltage VT degradation below 290 K is dominated by the hole trapping process.Further studies unambiguously show that this process is unnecessarily related to nitrogen but the incorporation of nitrogen in the gate dielectric increases the probability of hole trapping in the NBTI process as it introduces extra trap states located in the upper half of the Si band gap.The possible hole trapping mechanism in NBTI stressed PNO pMOSFETs is suggested by taking account of oxygen and nitrogen related trap centers.展开更多
文摘Nonlinear dynamic study is undertaken of the response of atmospheric and oceanic flow fields to local thermal source forcing in the context of a generalized geophysical fluid dynamic barotropic quasi_geostrophic model, discovering a good relation between thermal disturbance and flow field response to it, both having similar modes, and that the soliton_like responding field is a great deal larger in extent than the analogous_form forcing field, which implies that a 'narrow' thermal disturbance can excite a 'wide' response field, in some cases the particular structure of a thermal source may give rise to singular response of atmospheric and oceanic flow fields, thus displaying their abnormalities (for example the blocking situation in the atmosphere), the atmospheric and oceanic stream fields at mid_high latitudes respond to thermal forcing in a much more pronounced manner compared to those at low latitudes. The said research results that is in agreement with studies from mid_low latitude atmospheric experiments and observations and can be used to partially interpret the circulation singularity due to heat source anomaly on a local basis in the context of earch fluid flows.
基金Supported by the National Basic Research Program of China under Grant Nos 2010CB934200 and 2012CB619200the National Key Project(2009ZX-02023)the Natural Science Foundation of Jiangsu Province(No BK2011011).
文摘We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process.It is found that with the conventional Ni silicide method,the leakage current of a p+ (SiGe)-n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method.The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film.In addition,the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film.As a result,the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology.
文摘Negative bias temperature instability(NBTI)in ultrathin-plasma-nitrided-oxide(PNO)based p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)is investigated at temperatures ranging from 220 K to 470 K.It is found that the threshold voltage VT degradation below 290 K is dominated by the hole trapping process.Further studies unambiguously show that this process is unnecessarily related to nitrogen but the incorporation of nitrogen in the gate dielectric increases the probability of hole trapping in the NBTI process as it introduces extra trap states located in the upper half of the Si band gap.The possible hole trapping mechanism in NBTI stressed PNO pMOSFETs is suggested by taking account of oxygen and nitrogen related trap centers.
