The effect of growth conditions on GaN layer growth in the epitaxial lateral overgrowth(ELO)process by metal organic chemical vapor deposition(MOCVD)was investigated.Sapphire wafer was used as the substrate,which was ...The effect of growth conditions on GaN layer growth in the epitaxial lateral overgrowth(ELO)process by metal organic chemical vapor deposition(MOCVD)was investigated.Sapphire wafer was used as the substrate,which was chemically etched to make pattern on it.Then a GaN buffer layer was deposited at low temperature(LT)as the seeding layer to alleviate the lattice mismatch and difference in thermal conductivity between GaNand the substrate to grow a high quality layer with a low density of screw and mixed threading dislocations.Finally the GaN epilayer was deposited on the seeding layer by ELO.The properties of the GaN layer were then investigated by double-crystal X-ray diffraction,atomic force microscopy,and wet chemical etching.展开更多
文摘The effect of growth conditions on GaN layer growth in the epitaxial lateral overgrowth(ELO)process by metal organic chemical vapor deposition(MOCVD)was investigated.Sapphire wafer was used as the substrate,which was chemically etched to make pattern on it.Then a GaN buffer layer was deposited at low temperature(LT)as the seeding layer to alleviate the lattice mismatch and difference in thermal conductivity between GaNand the substrate to grow a high quality layer with a low density of screw and mixed threading dislocations.Finally the GaN epilayer was deposited on the seeding layer by ELO.The properties of the GaN layer were then investigated by double-crystal X-ray diffraction,atomic force microscopy,and wet chemical etching.
