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Limitations of On-Wafer Calibration and De-Embedding Methods in the Sub-THz Range 被引量:1
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作者 Manuel Potereau Christian Raya +5 位作者 Magali De Matos Sébastien Fregonese Arnaud Curutchet Min Zhang Bertrand Ardouin Thomas Zimmer 《Journal of Computer and Communications》 2013年第6期25-29,共5页
This paper investigates frequency limitations of calibration and de-embedding techniques for S parameter measurements. First, the TRL calibration methods are analysed and the error due to the probe movement when measu... This paper investigates frequency limitations of calibration and de-embedding techniques for S parameter measurements. First, the TRL calibration methods are analysed and the error due to the probe movement when measuring the different line lengths is quantified, next the coupling between the probe-heads and the wafer surface is investigated and finally an upper frequency validity limit for the standard Open-Short de-embedding method is given. The measured results have been confirmed thanks to the use of an electro-magnetic simulator. 展开更多
关键词 TRL Open-Short DE-EMBEDDING CALIBRATION
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e-LITE:A Concurrent Engineering Method Dedicated to E-learning Training Development for the Enhancement of Research Project Results
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作者 AKIF J-Ch DANG T-N +1 位作者 DUCQ Y GAUTHIER P 《计算机教育》 2012年第10期12-17,共6页
Scientific research projects aim to produce new knowledge generally in domains of high specialization.Some of these projects have goals of improving the performance of companies.In this case,the issues of the capitali... Scientific research projects aim to produce new knowledge generally in domains of high specialization.Some of these projects have goals of improving the performance of companies.In this case,the issues of the capitalization and transfer of scientific knowledge and its rapid transformation into professional skills are directly addressed.However,there is no method to derive e-learning teaching material from project results.So,this paper presents the e-LITE Method and its application to the ISTA3 project to support the process of developing a e-learning training.This application has allowed us to highlight the contributions of the method that promotes better knowledge sharing between partners of a research project and the development and transfer of research results to the professional world.So,after the presentation of the method,an application to the ISTA3 project will be presented. 展开更多
关键词 Concurrent engineering methodology Vocational training system E-LEARNING INTEROPERABILITY professional skill
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28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I
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作者 Ali Mohsen Adnan Harb +1 位作者 Nathalie Deltimple Abraham Serhane 《Circuits and Systems》 2017年第4期93-110,共18页
Nowadays, transistor technology is going toward the fully depleted architecture;the bulk transistors are becoming more complex in manufacturing as the transistor size is becoming smaller to achieve the high performanc... Nowadays, transistor technology is going toward the fully depleted architecture;the bulk transistors are becoming more complex in manufacturing as the transistor size is becoming smaller to achieve the high performance especially at the node 28 nm. This is the first of two papers that discuss the basic drawbacks of the bulk transistors and explain the two alternative transistors: 28 nm UTBB FD-SOI CMOS and the 22 nm Tri-Gate FinFET. The accompanying paper, Part II, focuses on the comparison between those alternatives and their physical properties, electrical properties, and reliability tests to properly set the preferences when choosing for different mobile media and consumers’ applications. 展开更多
关键词 UTBB FD-SOI: Ultra-Thin Body and Box Fully Depleted Silicon on Insulator Tri-Gate FINFET DIBL: Drain Induced Barrier Lowering
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28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II
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作者 Ali Mohsen Adnan Harb +1 位作者 Nathalie Deltimple Abraham Serhane 《Circuits and Systems》 2017年第5期111-121,共11页
This is Part II of a two-part paper that explores the 28-nm UTBB FD-SOI CMOS and the 22-nm Tri-Gate FinFET technology as the better alternatives to bulk transistors especially when the transistor’s architecture is go... This is Part II of a two-part paper that explores the 28-nm UTBB FD-SOI CMOS and the 22-nm Tri-Gate FinFET technology as the better alternatives to bulk transistors especially when the transistor’s architecture is going fully depleted and its size is becoming much smaller, 28-nm and above. Reliability tests of those alternatives are first discussed. Then, a comparison is made between the two alternative transistors comparing their physical properties, electrical properties, and their preferences in different applications. 展开更多
关键词 UTBB FD-SOI: Ultra-Thin Body and Box Fully Depleted Silicon on Insulator Tri-Gate FINFET DIBL: Drain Induced Barrier Lowering
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High Level Design Flow Targeting Real Multistandard Circuit Designer Requirements
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作者 Khaled Grati Nadia Khouja +1 位作者 Bertrand Le Gal Adel Ghazel 《通讯和计算机(中英文版)》 2011年第5期335-346,共12页
关键词 设计流程 电路设计 标准 瞄准 设计方法 通道选择 DECT UMTS
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Fourier synthetic-aperture-based time-resolved terahertz imaging
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作者 VIVEK KUMAR PITAMBAR MUKHERJEE +3 位作者 LORENZO VALZANIA AMAURY BADON PATRICK MOUNAIX SYLVAIN GIGAN 《Photonics Research》 2025年第2期407-416,共10页
Terahertz(THz)microscopy has attracted attention owing to distinctive characteristics of the THz frequency region,particularly non-ionizing photon energy,spectral fingerprint,and transparency to most nonpolar material... Terahertz(THz)microscopy has attracted attention owing to distinctive characteristics of the THz frequency region,particularly non-ionizing photon energy,spectral fingerprint,and transparency to most nonpolar materials.Nevertheless,the well-known Rayleigh diffraction limit imposed on THz waves commonly constrains the resultant imaging resolution to values beyond the millimeter scale,consequently limiting the applicability in numerous emerging applications for chemical sensing and complex media imaging.In this theoretical and numerical work,we address this challenge by introducing,to our knowledge,a new imaging approach based on acquiring high-spatial frequencies by adapting the Fourier synthetic aperture approach to the THz spectral range,thus surpassing the diffractionlimited resolution.Our methodology combines multi-angle THz pulsed illumination with time-resolved field measurements,as enabled by the state-of-the-art time-domain spectroscopy technique.We demonstrate the potential of the approach for hyperspectral THz imaging of semi-transparent samples and show that the technique can reconstruct spatial and temporal features of complex inhomogeneous samples with subwavelength resolution. 展开更多
关键词 THz microscopy hyperspectral imaging subwavelength resolution Rayleigh diffraction limit chemical sensing time resolved terahertz imaging rayleigh diffraction limit Fourier synthetic aperture
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