Self-assembled GaN nanorods were grown by metal-organic chemical vapor deposition.A highly regular rosette-shaped cathodoluminescence pattern in the GaN nanorods is observed,where its origin is helpful to deepen the u...Self-assembled GaN nanorods were grown by metal-organic chemical vapor deposition.A highly regular rosette-shaped cathodoluminescence pattern in the GaN nanorods is observed,where its origin is helpful to deepen the understanding of GaN nanorod growth.The pattern forms at the very early stages of nanorod growth,which consists of yellow luminescence at the edges and the non-luminous region at six vertices of the hexagon.To clarify its origin,we carried out detailed cathodoluminescence studies,electron microscopy studies and nanoscale secondary ion mass spectrometry at both the nanorod surface and cross-section.We found the pattern is not related to optical resonance modes or polarity inversion,which are commonly reported in GaN nanostructures.After chemical composition and strain analysis,we found higher carbon and nitrogen cluster concentration and large compressive strain at the pattern area.The pattern formation may relate to facet preferential distribution of non-radiative recombination centers related to excess carbon/nitrogen.This work provides an insight into strain distribution and defect-related emission in GaN nanorod,which is critical for future optoelectronic applications.展开更多
The stacking of twisted two-dimensional(2D)layered materials has led to the creation of moirésuperlattices,which have become a new platform for the study of quantum optics.The strong coupling of moirésuperla...The stacking of twisted two-dimensional(2D)layered materials has led to the creation of moirésuperlattices,which have become a new platform for the study of quantum optics.The strong coupling of moirésuperlattices can result in flat minibands that boost electronic interactions and generate interesting strongly correlated states,including unconventional superconductivity,Mott insulating states,and moiréexcitons.However,the impact of adjusting and localizing moiréexcitons in Van der Waals heterostructures has yet to be explored experimentally.Here,we present experimental evidence of the localization-enhanced moiréexcitons in the twisted WSe_(2)/WS_(2)/WSe_(2)heterotrilayer with type-II band alignments.At low temperatures,we observed multiple excitons splitting in the twisted WSe_(2)/WS_(2)/WSe_(2)heterotrilayer,which is manifested as multiple sharp emission lines,in stark contrast to the moiréexcitonic behavior of the twisted WSe_(2)/WS_(2)heterobilayer(which has a linewidth 4 times wider).This is due to the enhancement of the two moirépotentials in the twisted heterotrilayer,enabling highly localized moiréexcitons at the interface.The confinement effect of moirépotential on moiréexcitons is further demonstrated by changes in temperature,laser power,and valley polarization.Our findings offer a new approach for localizing moiréexcitons in twist-angle heterostructures,which has the potential for the development of coherent quantum light emitters.展开更多
基金B.J.Z.would like to thank the China Scholarship Council and the Australia National University for her scholarship supportX.Y.thanks the National Natural Science Foundation of China(Nos.61974166 and 51702368)for financial supportWe would like to thank Dr.Xu Zhang from Zhengzhou University for helpful discussion on some of the strain aspects in this work.
文摘Self-assembled GaN nanorods were grown by metal-organic chemical vapor deposition.A highly regular rosette-shaped cathodoluminescence pattern in the GaN nanorods is observed,where its origin is helpful to deepen the understanding of GaN nanorod growth.The pattern forms at the very early stages of nanorod growth,which consists of yellow luminescence at the edges and the non-luminous region at six vertices of the hexagon.To clarify its origin,we carried out detailed cathodoluminescence studies,electron microscopy studies and nanoscale secondary ion mass spectrometry at both the nanorod surface and cross-section.We found the pattern is not related to optical resonance modes or polarity inversion,which are commonly reported in GaN nanostructures.After chemical composition and strain analysis,we found higher carbon and nitrogen cluster concentration and large compressive strain at the pattern area.The pattern formation may relate to facet preferential distribution of non-radiative recombination centers related to excess carbon/nitrogen.This work provides an insight into strain distribution and defect-related emission in GaN nanorod,which is critical for future optoelectronic applications.
基金The authors express their gratitude to various organizations for their support in this research,including the National Natural Science Foundation of China(Grant No.61775241)the Hunan province key research and development project(Grant No.2019GK2233)+8 种基金the Hunan Provincial Science Fund for Distinguished Young Scholars(Grant No.2020JJ2059)the Youth Innovation Team(Grant No.2019012)of CSU.Additionally,they acknowledge the Science and Technology Innovation Basic Research Project of Shenzhen(Grant No.JCYJ20190806144418859)the National Natural Science Foundation of China(Nos.62090035 and U19A2090)the Key Program of Science and Technology Department of Hunan Province(2019XK2001,2020XK2001)The authors also thank the High-Performance Complex Manufacturing Key State Lab Project of Central South University(Grant No.ZZYJKT2020-12)for their support.Z.W.Lacknowledges the support from the Australian Research Council(ARC Discovery Project,DP180102976)C.T.W.is grateful for the support from the National Natural Science Foundation of China(Grant No.11974387)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB33000000)H.H.Z.acknowledges the support from the Postdoctoral Science Foundation of China(2022M713546).Finally,the authors recognize the Beijing Super Cloud Computing Center(BSCC)for providing HPC resources,which have greatly contributed to the results reported in this paper.
文摘The stacking of twisted two-dimensional(2D)layered materials has led to the creation of moirésuperlattices,which have become a new platform for the study of quantum optics.The strong coupling of moirésuperlattices can result in flat minibands that boost electronic interactions and generate interesting strongly correlated states,including unconventional superconductivity,Mott insulating states,and moiréexcitons.However,the impact of adjusting and localizing moiréexcitons in Van der Waals heterostructures has yet to be explored experimentally.Here,we present experimental evidence of the localization-enhanced moiréexcitons in the twisted WSe_(2)/WS_(2)/WSe_(2)heterotrilayer with type-II band alignments.At low temperatures,we observed multiple excitons splitting in the twisted WSe_(2)/WS_(2)/WSe_(2)heterotrilayer,which is manifested as multiple sharp emission lines,in stark contrast to the moiréexcitonic behavior of the twisted WSe_(2)/WS_(2)heterobilayer(which has a linewidth 4 times wider).This is due to the enhancement of the two moirépotentials in the twisted heterotrilayer,enabling highly localized moiréexcitons at the interface.The confinement effect of moirépotential on moiréexcitons is further demonstrated by changes in temperature,laser power,and valley polarization.Our findings offer a new approach for localizing moiréexcitons in twist-angle heterostructures,which has the potential for the development of coherent quantum light emitters.
