Doping metal ions offer a promising strategy to tune the intrinsic and surface properties of BiVO_(4)for enhanced photoelectrochemical(PEC)activity.Given this,experimental and theoretical studies on cadmium(Cd)doping ...Doping metal ions offer a promising strategy to tune the intrinsic and surface properties of BiVO_(4)for enhanced photoelectrochemical(PEC)activity.Given this,experimental and theoretical studies on cadmium(Cd)doping to BiVO_(4)photoanode were studied for PEC water splitting applications.The spectroscopic and PEC results indicate that the substitution of Cd at Bi lattice sites causes the reduction in the valence state of V^(5+)to V4+that creates hole trap states below the Fermi level of BiVO_(4).The introduced hole trap states at the BiVO_(4)surface suppress the charge recombination and provide effective hole transfer sites for the facile water oxidation reactions.The CdBiVO_(4)exhibited significantly higher photocurrent compared to the pristine BiVO_(4)reaching 3.5 mA cm^(-2)(with a hole scavenger)at 1.23 V vs RHE.Furthermore,doping increases the carrier density in the bulk of BiVO_(4)leading to improved charge separation,and charge transfer while reducing the hole transfer resistance at the interface.The Cd-doped BiVO_(4)exhibited a charge separation efficiency of 80%and with a 90%of overall water splitting faradaic efficiency.Importantly,the results of this work propose the advantages of doping metal ions at Bi lattice sites in BiVO_(4)for improved PEC activity.展开更多
基金the support of the Natural Sciences and Engineering Research Council of Canada(NSERC)Tier 1 Canada Research Chair in Green Hydrogen Production,the Québec Ministère de l'Économie,de l'Innovation et de l'Énergie(MEIE)[Développement de catalyseurs et d'électrodes innovants,àfaibles coûts,performants et durables pour la production d'hydrogène vert,funding reference number 00393501]。
文摘Doping metal ions offer a promising strategy to tune the intrinsic and surface properties of BiVO_(4)for enhanced photoelectrochemical(PEC)activity.Given this,experimental and theoretical studies on cadmium(Cd)doping to BiVO_(4)photoanode were studied for PEC water splitting applications.The spectroscopic and PEC results indicate that the substitution of Cd at Bi lattice sites causes the reduction in the valence state of V^(5+)to V4+that creates hole trap states below the Fermi level of BiVO_(4).The introduced hole trap states at the BiVO_(4)surface suppress the charge recombination and provide effective hole transfer sites for the facile water oxidation reactions.The CdBiVO_(4)exhibited significantly higher photocurrent compared to the pristine BiVO_(4)reaching 3.5 mA cm^(-2)(with a hole scavenger)at 1.23 V vs RHE.Furthermore,doping increases the carrier density in the bulk of BiVO_(4)leading to improved charge separation,and charge transfer while reducing the hole transfer resistance at the interface.The Cd-doped BiVO_(4)exhibited a charge separation efficiency of 80%and with a 90%of overall water splitting faradaic efficiency.Importantly,the results of this work propose the advantages of doping metal ions at Bi lattice sites in BiVO_(4)for improved PEC activity.
