We present a method to fabricate handcrafted thermoelectric devices on standard office paper substrates.The devices are based on thin films of WS_(2),Te,and BP(P-type semiconductors)and TiS_(3)and TiS_(2)(N-type semic...We present a method to fabricate handcrafted thermoelectric devices on standard office paper substrates.The devices are based on thin films of WS_(2),Te,and BP(P-type semiconductors)and TiS_(3)and TiS_(2)(N-type semiconductors),deposited by simply rubbing powder of these materials against paper.The thermoelectric properties of these semiconducting films revealed maximum Seebeck coefficients of(+1.32±0.27)mV K^(-1)and(-0.82±0.15)mV K^(-1)for WS_(2)and TiS_(3),respectively.Additionally,Peltier elements were fabricated by interconnecting the P-and N-type films with graphite electrodes.A thermopower value up to 6.11 mV K^(-1)was obtained when the Peltier element were constructed with three junctions.The findings of this work show proof-of-concept devices to illustrate the potential application of semiconducting van der Waals materials in future thermoelectric power generation as well as temperature sensing for low-cost disposable electronic devices.展开更多
We present a low-cost and easy-to-implement technique to fabricate large-area WS_(2) photodetector devices onto transparent and flexible polycarbonate substrates.The method relies on the deposition of large-area(in th...We present a low-cost and easy-to-implement technique to fabricate large-area WS_(2) photodetector devices onto transparent and flexible polycarbonate substrates.The method relies on the deposition of large-area(in the cm scale)thin films(~30 nm thick)of WS_(2) by a recently introduced abrasion-induced method.Interdigitated electrical contacts are then deposited by thermal evaporation through a shadow mask.The photodetectors present well-balanced performances with an good trade-off between responsivity(up to 144 mA/W at a source-drain voltage of 10 V and illumination power of 1μW)and response time(down to~70µs)and a detectivity value of 10^(8) Jones.We found that the devices perform very reversibly upon several illumination and straining cycles and we found a moderate device-to-device variation.展开更多
基金funded by the European Research Council(ERC)under the European Union's Horizon 2020 research and innovation program(grant agreement no.755655,ERC-StG 2017 project 2D-TOPSENSE)the Ministry of Science and Innovation(Spain)through the project PID2020-115566RB-I00+7 种基金the Distinguished Scientist Fellowship Program(DSFP)at King Saud University for partial funding of this workfinancial support from the Agencia Estatal de Investigación of Spain(Grants PID2019-106820RB,RTI2018-097180-B-100,and PGC2018-097018-B-I00)the Junta de Castilla y León(Grants SA256P18 and SA121P20),including funding by ERDF/FEDERfinancial support from Universidad Complutense de Madrid and European Commission(MSCA COFUND UNA4CAREER grant.Project number 4129252)financial support from MICINN(Spain)through the program Juan de la Cierva-Incorporaciónthe financial support of the Spanish Ministry of Industry and Competitiveness to the project MAT2017-84496-Rfinancial support from the Ministry of Science and Innovation(Spain)through the project RT2018-099794-B-100financial support from the Ministry de Universities(Spain)(Ph.D.contract FPU19/04224)
文摘We present a method to fabricate handcrafted thermoelectric devices on standard office paper substrates.The devices are based on thin films of WS_(2),Te,and BP(P-type semiconductors)and TiS_(3)and TiS_(2)(N-type semiconductors),deposited by simply rubbing powder of these materials against paper.The thermoelectric properties of these semiconducting films revealed maximum Seebeck coefficients of(+1.32±0.27)mV K^(-1)and(-0.82±0.15)mV K^(-1)for WS_(2)and TiS_(3),respectively.Additionally,Peltier elements were fabricated by interconnecting the P-and N-type films with graphite electrodes.A thermopower value up to 6.11 mV K^(-1)was obtained when the Peltier element were constructed with three junctions.The findings of this work show proof-of-concept devices to illustrate the potential application of semiconducting van der Waals materials in future thermoelectric power generation as well as temperature sensing for low-cost disposable electronic devices.
基金the Ministry of Science and Innovation (Spain)through the project PID2020-115566RB-I00.A.C.-G.,A.M.A.-E.A.N.extend their sincere appreciation to the Distinguished Scientist Fellowship Program (DSFP)at King Saud University for funding of this work+4 种基金support from the Spanish Ministry of Economy,Industry,and Competitiveness (MINECO)through a Juan de la Cierva-formación fellowship 2017 FJCI-2017-32919.J.Q.support from the Agencia Estatal de Investigación of Spain (Grants PID2019-106820RB,RTI2018-097180-B-100,and PGC2018-097018-BI00)the Junta de Castilla y León (Grants SA256P18 and SA121P20),including funding by ERDF/FEDER.J.Q.support from Universidad Complutense de Madrid and European Commision (MSCA COFUND UNA4CAREER grant.Project number 4129252)from MICINN (Spain)through the program Juan de la Cierva-Incorporación.
文摘We present a low-cost and easy-to-implement technique to fabricate large-area WS_(2) photodetector devices onto transparent and flexible polycarbonate substrates.The method relies on the deposition of large-area(in the cm scale)thin films(~30 nm thick)of WS_(2) by a recently introduced abrasion-induced method.Interdigitated electrical contacts are then deposited by thermal evaporation through a shadow mask.The photodetectors present well-balanced performances with an good trade-off between responsivity(up to 144 mA/W at a source-drain voltage of 10 V and illumination power of 1μW)and response time(down to~70µs)and a detectivity value of 10^(8) Jones.We found that the devices perform very reversibly upon several illumination and straining cycles and we found a moderate device-to-device variation.
