In this work, the effects of boundaries conditions and truncation errors in the distribution of minority carriers in the semiconductor are studied. It is a one-dimensional digital study of a polycrystalline silicon so...In this work, the effects of boundaries conditions and truncation errors in the distribution of minority carriers in the semiconductor are studied. It is a one-dimensional digital study of a polycrystalline silicon solar cell under polychromatic illumination in a dynamic state. Starting from the Boltzmann equation of semiconductors, the author establishes the general equation of particle transport. Assumptions made on the latter allow it to give the equation of distribution of minority carriers in a general way in its case to be studied. This dimensioned distribution equation reveals the parameters of influences on the distribution of carriers. It obtains a partial derivative equation for the carrier distribution function. The boundary conditions are then discretized to order one and then to order two. By considering boundary conditions and the nature of the carriers, the author numerically resolves the discretized general equation by assessing the influence of the nature of the boundary conditions and truncation errors and the influence of the discretization step on the density of the charge carriers by setting certain parameters and varying others. The work ends with a conclusion and logical follow-up to this work.展开更多
In this article we make a detailed study and a presentation of the different models of circuit’s equivalent to silicon-based photovoltaic solar cells. Starting from a real solar cell and real phenomena from the manuf...In this article we make a detailed study and a presentation of the different models of circuit’s equivalent to silicon-based photovoltaic solar cells. Starting from a real solar cell and real phenomena from the manufacture of the cell to the production of current by the cell. A comparison of the models with a real experimental method is carried out. The comparison is based on an overlay of the results. The study allowed us to choose the most suitable model. We are interested in the losses by leaks and the losses due to the development of the cell. In fact, we studied the influence of the shunt resistance on the current-voltage characteristic and the electrical power.展开更多
文摘In this work, the effects of boundaries conditions and truncation errors in the distribution of minority carriers in the semiconductor are studied. It is a one-dimensional digital study of a polycrystalline silicon solar cell under polychromatic illumination in a dynamic state. Starting from the Boltzmann equation of semiconductors, the author establishes the general equation of particle transport. Assumptions made on the latter allow it to give the equation of distribution of minority carriers in a general way in its case to be studied. This dimensioned distribution equation reveals the parameters of influences on the distribution of carriers. It obtains a partial derivative equation for the carrier distribution function. The boundary conditions are then discretized to order one and then to order two. By considering boundary conditions and the nature of the carriers, the author numerically resolves the discretized general equation by assessing the influence of the nature of the boundary conditions and truncation errors and the influence of the discretization step on the density of the charge carriers by setting certain parameters and varying others. The work ends with a conclusion and logical follow-up to this work.
文摘In this article we make a detailed study and a presentation of the different models of circuit’s equivalent to silicon-based photovoltaic solar cells. Starting from a real solar cell and real phenomena from the manufacture of the cell to the production of current by the cell. A comparison of the models with a real experimental method is carried out. The comparison is based on an overlay of the results. The study allowed us to choose the most suitable model. We are interested in the losses by leaks and the losses due to the development of the cell. In fact, we studied the influence of the shunt resistance on the current-voltage characteristic and the electrical power.
