Perovskite materials,with their outstanding optoelectronic properties,low cost,solution‐processability,and scalability,haveemerged as promising candidates in the field of sensors.Despite extensive exploration into th...Perovskite materials,with their outstanding optoelectronic properties,low cost,solution‐processability,and scalability,haveemerged as promising candidates in the field of sensors.Despite extensive exploration into the photoelectric properties andtraditional applications(e.g.,gas sensing)of perovskite sensors,there has been limited focus on the fabrication processes thatdominate their performance and emerging application directions.The flourishing development of perovskite sensors shouldcomprehend the challenges in fabrication processes(e.g.,stability,uniformity,and scale‐up production)of perovskite sensorsand further improve the sensing performance in conjunction with the working principles,extending their application fields.Herein,a comprehensive overview primarily focuses on the significant challenges faced by perovskite sensors in emergingapplication fields,including performance enhancement and process optimization.The key performance parameters andworking principles of perovskite sensor are analyzed first.Then we review the effective design strategies and solutions proposedin recent research,while providing insights into optimizing sensor design to enhance sensing performance for precise detection.Moreover,some emerging applications of perovskite sensors,such as smart biomedical diagnosis,wearable devices,andartificial intelligence,are explored.Current challenges and future trends are also addressed,emphasizing the growing potentialof perovskite sensors in advancing sensor technology innovation and interdisciplinary applications.展开更多
Constructing a photoconductive semiconductor switch (PCSS)-metal coil structure, we discovered anew phenomenon of electromagnetic oscillation in vanadium-compensation semi-insulating (VCSI) PCSS. Here thePCSS responds...Constructing a photoconductive semiconductor switch (PCSS)-metal coil structure, we discovered anew phenomenon of electromagnetic oscillation in vanadium-compensation semi-insulating (VCSI) PCSS. Here thePCSS responds to laser pulse and high-voltage signal while the metal coil generates an oscillating voltage pulseenvelope signal. The generation of this oscillating signal is not related to the input bias voltage of the PCSS, the pulsecircuit components, or the electrode structure of the PCSS, rather it is related to the output characteristic of the PCSS.This physical phenomenon can be explained using the current surge model in photoconducting antenna. Preparingohmic contact electrode on the silicon carbide material forms the PCSS, which generates a large number ofphotogenerated carriers when ultra-fast laser pulses irradiate the surface of the material and Simultaneously applies abias voltage signal between the electrode. At this time inside the PCSS the electric field causes the transient current,radiating electromagnetic wave to the metal coil to generate oscillating signal.展开更多
Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electro...Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas(2DEG)channel.The fabricated E-mode HEMTs exhibit a relatively high threshold voltage(VTH)of+1.1 V with good uniformity.A maxi-mum current/power gain cut-off frequency(fT/fMAX)of 31.3/99.6 GHz with a power added efficiency(PAE)of 52.47%and an out-put power density(Pout)of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-μm gate and Au-free ohmic contact.展开更多
基金supported by the National Key Research and Development Program of China(2021YFA0715600,2021YFA0717700)the NationalNatural Science Foundation of China(22308268,22478318,62274127,62374128).
文摘Perovskite materials,with their outstanding optoelectronic properties,low cost,solution‐processability,and scalability,haveemerged as promising candidates in the field of sensors.Despite extensive exploration into the photoelectric properties andtraditional applications(e.g.,gas sensing)of perovskite sensors,there has been limited focus on the fabrication processes thatdominate their performance and emerging application directions.The flourishing development of perovskite sensors shouldcomprehend the challenges in fabrication processes(e.g.,stability,uniformity,and scale‐up production)of perovskite sensorsand further improve the sensing performance in conjunction with the working principles,extending their application fields.Herein,a comprehensive overview primarily focuses on the significant challenges faced by perovskite sensors in emergingapplication fields,including performance enhancement and process optimization.The key performance parameters andworking principles of perovskite sensor are analyzed first.Then we review the effective design strategies and solutions proposedin recent research,while providing insights into optimizing sensor design to enhance sensing performance for precise detection.Moreover,some emerging applications of perovskite sensors,such as smart biomedical diagnosis,wearable devices,andartificial intelligence,are explored.Current challenges and future trends are also addressed,emphasizing the growing potentialof perovskite sensors in advancing sensor technology innovation and interdisciplinary applications.
基金supported by Major Projects of Shanxi Province (202101030201001)。
文摘Constructing a photoconductive semiconductor switch (PCSS)-metal coil structure, we discovered anew phenomenon of electromagnetic oscillation in vanadium-compensation semi-insulating (VCSI) PCSS. Here thePCSS responds to laser pulse and high-voltage signal while the metal coil generates an oscillating voltage pulseenvelope signal. The generation of this oscillating signal is not related to the input bias voltage of the PCSS, the pulsecircuit components, or the electrode structure of the PCSS, rather it is related to the output characteristic of the PCSS.This physical phenomenon can be explained using the current surge model in photoconducting antenna. Preparingohmic contact electrode on the silicon carbide material forms the PCSS, which generates a large number ofphotogenerated carriers when ultra-fast laser pulses irradiate the surface of the material and Simultaneously applies abias voltage signal between the electrode. At this time inside the PCSS the electric field causes the transient current,radiating electromagnetic wave to the metal coil to generate oscillating signal.
基金supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS)+4 种基金in part by CAS-Croucher Funding Scheme under Grant CAS22801in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018in part by the University of CASin part by IMECAS-HKUST-Joint Laboratory of Microelectronics.
文摘Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas(2DEG)channel.The fabricated E-mode HEMTs exhibit a relatively high threshold voltage(VTH)of+1.1 V with good uniformity.A maxi-mum current/power gain cut-off frequency(fT/fMAX)of 31.3/99.6 GHz with a power added efficiency(PAE)of 52.47%and an out-put power density(Pout)of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-μm gate and Au-free ohmic contact.
