In order to protect the finished structures on the front side during deep silicon wet etching processes, the wax coating for double-sided etching process on the wafer is studied to separate the aforementioned structur...In order to protect the finished structures on the front side during deep silicon wet etching processes, the wax coating for double-sided etching process on the wafer is studied to separate the aforementioned structures from the strong aqueous bases. By way of heating and vacuumization, the air bubbles are expelled from the coating to extend the protection duration. The air pressure in the sealed chamber is 0.026 7 Pa, and the temperature of the heated wafer is 300℃. Two kinds of the wax are used, and the corresponding photos of the etched wafer and the protection times are given. In 75 ℃ 10 % KOH solution, the protection duration is more than 8 h.展开更多
With surface- and bulk-micromachining, an 8 × 8 mirrors array is designed, fabricated and tested, which is based on electro-thermal actuators and can be addressed individually. The micromirror is square shaped, 4...With surface- and bulk-micromachining, an 8 × 8 mirrors array is designed, fabricated and tested, which is based on electro-thermal actuators and can be addressed individually. The micromirror is square shaped, 4-corner-actuated. Its dimension is 200 μm × 200 μm. The substrate below it is caved away to ensure a tilt at an angle as large as possible. To protect the etch-sensitive features on the front side of the wafer undamaged during wet deep silicon etch on the backside, the wax protective coating process is used. Mirror actuated by powering an alternative pair of heaters will tilt in 2-DOF. If its 4 cantilevers/heaters are powered synchronously, it will move in a piston mode. The effective arrays are more than 80% out of the three finished wafers. When the ramp voltage frequency applied to a pair of neighboring cantilevers is 5 Hz at 10 V, the average tilting angle can be ± 8°.展开更多
文摘In order to protect the finished structures on the front side during deep silicon wet etching processes, the wax coating for double-sided etching process on the wafer is studied to separate the aforementioned structures from the strong aqueous bases. By way of heating and vacuumization, the air bubbles are expelled from the coating to extend the protection duration. The air pressure in the sealed chamber is 0.026 7 Pa, and the temperature of the heated wafer is 300℃. Two kinds of the wax are used, and the corresponding photos of the etched wafer and the protection times are given. In 75 ℃ 10 % KOH solution, the protection duration is more than 8 h.
文摘With surface- and bulk-micromachining, an 8 × 8 mirrors array is designed, fabricated and tested, which is based on electro-thermal actuators and can be addressed individually. The micromirror is square shaped, 4-corner-actuated. Its dimension is 200 μm × 200 μm. The substrate below it is caved away to ensure a tilt at an angle as large as possible. To protect the etch-sensitive features on the front side of the wafer undamaged during wet deep silicon etch on the backside, the wax protective coating process is used. Mirror actuated by powering an alternative pair of heaters will tilt in 2-DOF. If its 4 cantilevers/heaters are powered synchronously, it will move in a piston mode. The effective arrays are more than 80% out of the three finished wafers. When the ramp voltage frequency applied to a pair of neighboring cantilevers is 5 Hz at 10 V, the average tilting angle can be ± 8°.
