加密算法被广泛用来保护秘密信息,侧信道攻击通过捕获侧信道数据对加密算法进行攻击。相关功耗分析(Correlation Power Analysis,CPA)攻击具有易于捕获功耗数据、算法实现简单、攻击效率高等特点,是加密算法的重要威胁之一。掩码技术是...加密算法被广泛用来保护秘密信息,侧信道攻击通过捕获侧信道数据对加密算法进行攻击。相关功耗分析(Correlation Power Analysis,CPA)攻击具有易于捕获功耗数据、算法实现简单、攻击效率高等特点,是加密算法的重要威胁之一。掩码技术是一种常用于防御功耗分析攻击的技术,这种技术在不修改算法本身功耗特点的情况下,引入随机数。掩码使算法中间值随机化,降低算法中间值与功耗数据的相关性,能够防御相关功耗分析攻击等。对有限域(Galois Field,GF)实现的高级加密标准(Advanced Encryption Standard,AES)算法、SM4算法使用掩码技术进行防护,重点在于优化有限域求逆算法。针对AES算法、SM4算法分别提出一种有限域掩码算法,使用全掩码技术,其中包含一种通用的有限域求逆算法。该GF(28)上求逆算法共使用6个GF(24)乘法模块,2个GF(24)平方模块,2个GF(24)平方后乘常数模块和1个GF(24)求逆模块,求逆结果输出基本同步。实验结果表明,掩码算法有效提升了算法硬件实现的抗功耗攻击能力。展开更多
Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively u...Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively used approach for advanced lithography process beyond 28 nm technology node.This work proposes a novel SMO method to improve the image fidelity of high-NA EUV lithography system.A fast high-NA EUV lithography imaging model is established first,which includes the effects of mask three-dimensional structure and anamorphic magnification.Then,this paper develops an efficient SMO method that combines the gradient-based mask optimization algorithm and the compressivesensing-based source optimization algorithm.A mask rule check(MRC)process is further proposed to simplify the optimized mask pattern.Results illustrate that the proposed SMO method can significantly reduce the lithography patterning error,and maintain high computational efficiency.展开更多
基金National Internet of Things and Smart City Key Project Docking(Z181100003518002)Beijing Science and Technology Project(Z171100001117147)Beijing Natural Science Foundation(4184106)。
基金financially supported by National Natural Science Foundation of China (No. 62274181,62204257 and 62374016)Chinese Ministry of Science and Technology (No. 2019YFB2205005)+4 种基金Guangdong Province Research and Development Program in Key Fields (No. 2021B0101280002)the support from Youth Innovation Promotion Association Chinese Academy of Sciences (No. 2021115)Beijing Institute of ElectronicsBeijing Association for Science and Technology as well,the support from University of Chinese Academy of Sciences (No. 118900M032)China Fundamental Research Funds for the Central Universities (No. E2ET3801)
文摘Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively used approach for advanced lithography process beyond 28 nm technology node.This work proposes a novel SMO method to improve the image fidelity of high-NA EUV lithography system.A fast high-NA EUV lithography imaging model is established first,which includes the effects of mask three-dimensional structure and anamorphic magnification.Then,this paper develops an efficient SMO method that combines the gradient-based mask optimization algorithm and the compressivesensing-based source optimization algorithm.A mask rule check(MRC)process is further proposed to simplify the optimized mask pattern.Results illustrate that the proposed SMO method can significantly reduce the lithography patterning error,and maintain high computational efficiency.
