In this paper, the behavior analysis of two cells chopper connected to a nonlinear load is reported. Thus, this is done in order to highlight the way to chaos. Furthermore, throughout the study of these dynamical beha...In this paper, the behavior analysis of two cells chopper connected to a nonlinear load is reported. Thus, this is done in order to highlight the way to chaos. Furthermore, throughout the study of these dynamical behaviors of this complex switched system some basic dynamical properties, such as Poincare section, first return map, bifurcation diagram, power spectrum, and strange attractor are investigated. The system examined in Matlab-Simulink. Analyses of simulation results show that this system has complex dynamics with some interesting characteristics.展开更多
A following of diverse degradation indicators during the ageing in operational conditions of A1- GaN/GaN HEMTs （high electron mobility transistors） is proposed. Measurements of pulsed I-V, Schottky barrier height, R...A following of diverse degradation indicators during the ageing in operational conditions of A1- GaN/GaN HEMTs （high electron mobility transistors） is proposed. Measurements of pulsed I-V, Schottky barrier height, RF output power and gate current versus output power during the early phase of the ageing test （2000 h on a 6000 h total） are presented. These preliminary results give insight on some of the principal degradation indicators that are interesting to follow during an ageing test close to operational conditions on such components.展开更多
文摘In this paper, the behavior analysis of two cells chopper connected to a nonlinear load is reported. Thus, this is done in order to highlight the way to chaos. Furthermore, throughout the study of these dynamical behaviors of this complex switched system some basic dynamical properties, such as Poincare section, first return map, bifurcation diagram, power spectrum, and strange attractor are investigated. The system examined in Matlab-Simulink. Analyses of simulation results show that this system has complex dynamics with some interesting characteristics.
基金the French Department of Defense (DGA) for its financial support to this work
文摘A following of diverse degradation indicators during the ageing in operational conditions of A1- GaN/GaN HEMTs （high electron mobility transistors） is proposed. Measurements of pulsed I-V, Schottky barrier height, RF output power and gate current versus output power during the early phase of the ageing test （2000 h on a 6000 h total） are presented. These preliminary results give insight on some of the principal degradation indicators that are interesting to follow during an ageing test close to operational conditions on such components.
