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The overview of the language acquisition for Chinese city children aged 0-3 years
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作者 ZHU Jian-xiong 《Sino-US English Teaching》 2009年第8期5-8,21,共5页
This paper examines the language development of Chinese children aged 0-3years in city family. About baby's language development by the time stages accordingly. Paying special attention to the efforts for the parents... This paper examines the language development of Chinese children aged 0-3years in city family. About baby's language development by the time stages accordingly. Paying special attention to the efforts for the parents or caregivers. Infants receive more talking education and speak earlier. Most parents can hardly wait for their baby to say its first word and communicate with their baby. From about 2 years old, the child should be able to use simple phrases, retell simple story and even to sing song. Parents play an important role in this stage. By the 3 years children begin to use most of function words rather than omit them. And acquisition for the second language will help children's language development. The children have a gift for learning language. 展开更多
关键词 OVERVIEW learning language acquisition aged 0-3 years
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An integrated microfluidics platform with high-throughput single-cell cloning array and concentration gradient generator for efficient cancer drug effect screening
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作者 Biao Wang Bang-Shun He +6 位作者 Xiao-Lan Ruan Jiang Zhu Rui Hu Jie Wang Ying Li Yun-Huang Yang Mai-Li Liu 《Military Medical Research》 SCIE CAS CSCD 2023年第3期325-341,共17页
Background:Tumor cell heterogeneity mediated drug resistance has been recognized as the stumbling block of cancer treatment.Elucidating the cytotoxicity of anticancer drugs at single-cell level in a high-throughput wa... Background:Tumor cell heterogeneity mediated drug resistance has been recognized as the stumbling block of cancer treatment.Elucidating the cytotoxicity of anticancer drugs at single-cell level in a high-throughput way is thus of great value for developing precision therapy.However,current techniques suffer from limitations in dynamically characterizing the responses of thousands of single cells or cell clones presented to multiple drug conditions.Methods:We developed a new microfluidics-based“SMART”platform that is Simple to operate,able to generate a Massive single-cell array and Multiplex drug concentrations,capable of keeping cells Alive,Retainable and Trackable in the microchambers.These features are achieved by integrating a Microfluidic chamber Array(4320 units)and a sixConcentration gradient generator(MAC),which enables highly efficient analysis of leukemia drug effects on single cells and cell clones in a high-throughput way.Results:A simple procedure produces 6 on-chip drug gradients to treat more than 3000 single cells or single-cell derived clones and thus allows an efficient and precise analysis of cell heterogeneity.The statistic results reveal that Imatinib(Ima)and Resveratrol(Res)combination treatment on single cells or clones is much more efficient than Ima or Res single drug treatment,indicated by the markedly reduced half maximal inhibitory concentration(IC50).Additionally,single-cell derived clones demonstrate a higher IC_(50) in each drug treatment compared to single cells.Moreover,primary cells isolated from two leukemia patients are also found with apparent heterogeneity upon drug treatment on MAC.Conclusions:This microfluidics-based“SMART”platform allows high-throughput single-cell capture and culture,dynamic drug-gradient treatment and cell response monitoring,which represents a new approach to efficiently investigate anticancer drug effects and should benefit drug discovery for leukemia and other cancers. 展开更多
关键词 MICROFLUIDICS Single-cell analysis LEUKEMIA High-throughput drug screening Single-cell cloning
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A switchable high-sensitivity strain sensor based on piezotronic resonant tunneling junctions
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作者 Gongwei Hu Li Zeng +3 位作者 Fobao Huang Shuaiwei Fan Qiao Chen Wei Huang 《Nano Research》 SCIE EI CSCD 2024年第11期10242-10255,共14页
Developing emerging technologies in Internet of Things and artificial intelligence requires high-speed, low-power, high-sensitivity, and switchable-functionality strain sensors capable of sensing subtle mechanical sti... Developing emerging technologies in Internet of Things and artificial intelligence requires high-speed, low-power, high-sensitivity, and switchable-functionality strain sensors capable of sensing subtle mechanical stimuli in complex ambience. Resonant tunneling diodes (RTDs) are the good candidate for such sensing applications due to the ultrafast transport process, lower tunneling current, and negative differential resistance. However, notably enhancing sensing sensitivity remains one of the greatest challenges for RTD-related strain sensors. Here, we use piezotronic effect to improve sensing performance of strain sensors in double-barrier ZnO nanowire RTDs. This strain sensor not only possesses an ultrahigh gauge factor (GF) 390 GPa^(−1), two orders of magnitude higher than these reported RTD-based strain sensors, but also can switch the sensitivity with a GF ratio of 160 by adjusting bias voltage in a small range of 0.2 V. By employing Landauer–Büttiker quantum transport theory, we uncover two primary factors governing piezotronic modulation of resonant tunneling transport, i.e., the strain-mediated polarization field for manipulation of quantized subband levels, and the interfacial polarization charges for adjustment of space charge region. These two mechanisms enable strain to induce the negative differential resistance, amplify the peak-valley current ratio, and diminish the resonant bias voltage. These performances can be engineered by the regulation of bias voltage, temperature, and device architectures. Moreover, a strain sensor capable of electrically switching sensing performance within sensitive and insensitive regimes is proposed. This study not only offers a deep insight into piezotronic modulation of resonant tunneling physics, but also advances the RTD towards highly sensitive and multifunctional sensor applications. 展开更多
关键词 piezotronic effect resonant tunneling diode negative differential resistance highly sensitive strain sensor ZnO nanowire ratio of gauge factor
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