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Dispersion Properties in Total Internal Reflective Photonic Crystal Fiber 被引量:2
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作者 WENHua HAODong-shan 《Semiconductor Photonics and Technology》 CAS 2004年第1期68-72,共5页
The dispersion properties in the short wavelength region of total internal reflective photonic crystal fiber have been studied by using the models of the equivalent twin waveguide soliton coupling,effective refractive... The dispersion properties in the short wavelength region of total internal reflective photonic crystal fiber have been studied by using the models of the equivalent twin waveguide soliton coupling,effective refractive index,effective normalized frequency and dispersion management solitons.It is shown that the dispersion in the cladding waveguide of the total internal reflective photonic crystal fiber is a positive dispersion,and the dispersion of its core waveguide is a negative dispersion.The method of the compensated probing laser diffraction by the phase hole induced by the stationary pumping laser in the cladding waveguide enables the average dispersion value of the total internal reflective photonic crystal fiber to be close to zero and the zero dispersion point to shift to the short wavelength region. 展开更多
关键词 Optical fiber Photonic crystal fiber Effective refractive index Effective normalized frequency Fiber dispersion Dispersion management soliton
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Analysis on Mode Field Distribution of Waveguide Grating Coupler by the Scalar FDTD 被引量:2
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作者 HUANGChong-qing LIUJing +3 位作者 LUOWen-hua ANWei-ke YUANXiu-hua HUANGDe-xiu 《Semiconductor Photonics and Technology》 CAS 2003年第3期166-169,177,共5页
The scalar two-dimensional finite difference time domain (FDTD) method is applied to simulate the mode field distribution of TE 0 of the waveguide grating coupler. Computer simulation shows that the same stable mode f... The scalar two-dimensional finite difference time domain (FDTD) method is applied to simulate the mode field distribution of TE 0 of the waveguide grating coupler. Computer simulation shows that the same stable mode field distribution pattern is obtained through the different kinds of driving sources. It is found that the optical field mode is determined by waveguide structure and optical wavelength other than the driving source.According to the mode field distribution, the optimum coupling efficiency can be predicted. Compared with another numerical methods,the CPU-time and memory elements of computer used by FDTD are much less. 展开更多
关键词 Waveguide grating couplers Light fields Coupling efficiency FDTD
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Device Design and Characteristics for SOA-basedAll Optical Signal 2R Regeneration 被引量:2
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作者 LUNXiu-jun HUANGYong-qing RENXiao-min 《Semiconductor Photonics and Technology》 CAS 2003年第2期65-70,共6页
A new scheme based on SOA-MZI for all-optical 2R regeneration is proposed. The characteristics of gain and switching window of this device are investigated in detail. Numerical simulation results indicate that the non... A new scheme based on SOA-MZI for all-optical 2R regeneration is proposed. The characteristics of gain and switching window of this device are investigated in detail. Numerical simulation results indicate that the nonlinear gain compression, the time delay between the input optical signal and the width of the optical pulse are essential parameters for a good performance of all-optical 2R regeneration. 展开更多
关键词 all―optical 2R regeneration semiconductor optical amplifier (SOA) opticaldecision gate mach―zehnder interferometer (MZI)
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Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots 被引量:2
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作者 WEIQuan-xiang NIUZhi-chuan 《Semiconductor Photonics and Technology》 CAS 2003年第1期30-33,共4页
Self-organized In 0.5 Ga 0.5 As/GaAs quantum island structure emitting at 1.35 μm at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs) 1/(GaAs) 1 monolayer deposition... Self-organized In 0.5 Ga 0.5 As/GaAs quantum island structure emitting at 1.35 μm at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs) 1/(GaAs) 1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In 0.5 Ga 0.5 As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices. 展开更多
关键词 quantum dot molecular beam epitaxy PHOTOLUMINESCENCE
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CdTe Films Deposited by Closed-space Sublimation 被引量:2
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作者 CAIWei ZHANGJing-quan 《Semiconductor Photonics and Technology》 CAS 2001年第2期84-88,共5页
CdTe films are prepared by closed-space sublimation technology. Dependence of film crystalline on substrate materials and substrate temperature is investigated. It is found that films exhibit higher crystallinity at s... CdTe films are prepared by closed-space sublimation technology. Dependence of film crystalline on substrate materials and substrate temperature is investigated. It is found that films exhibit higher crystallinity at substrate temperature higher than 400 ℃. And the CdTe films deposited on CdS films with higher crystallinity have bigger crystallite and higher uniformity. Treatment with CdCl 2 methanol solution promotes the crystallite growth of CdTe films during annealing. 展开更多
关键词 CDTE Closed-space sublimation Solar cells
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Effect of the Structure and Valence State on the Properties of VO_2 Thin Films 被引量:1
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作者 LUYong LINLi-bin 《Semiconductor Photonics and Technology》 CAS 2001年第2期98-103,共6页
VO 2 thin films with good switching properties were prepared by controlling the annealing time and the annealing temperature in a vacuum system. The structural, optical and electrical properties of the samples were ch... VO 2 thin films with good switching properties were prepared by controlling the annealing time and the annealing temperature in a vacuum system. The structural, optical and electrical properties of the samples were characterized by using XRD、XPS、UV-VIS and electrical measurements. The switching parameters of VO 2 thin film were investigated too. The results indicate that before and after phase transition the resistance of VO 2 thin films changes about three orders of magnitude, the variation of film transmittance of 40 % has been carried out with the absorptivity switching velocity of about 0.260 7 /min at 900 nm . The structural property of samples has been improved but the phase-transition properties have been decreased by increasing the annealing time and annealing temperature. The valence of V ions and the structure of samples have great effect on phase transition properties of VO 2 thin films. Discussion on the effects of annealing time and annealing temperature on the phase-transition temperature and hysteresis width shows that the best reasonable annealing time and annealing temperature can be achieved. 展开更多
关键词 VO 2 thin film Phase transition Film structure Valence state
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TiO_2 Thin Film UV Detectors Deposited by DC Reactive Magnetron Sputtering 被引量:1
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作者 ZHANGLi-wei YAONing ZHANGBing-lin FANZhi-qin YANGShi-e LUZhan-ling 《Semiconductor Photonics and Technology》 CAS 2004年第4期245-247,共3页
Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide(ITO) thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandw... Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide(ITO) thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. The detector shows a good photoresponse with a rise time of 2 s and a fall time of 40 s, the photocurrent is linearly increased with the bias voltage. 展开更多
关键词 TiO_(2) thin films SPUTTERING Photoconductive UV detector PHOTORESPONSE
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Design and Analysis of 4×4 Arrayed Waveguide Grating Multiplexer 被引量:1
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作者 DINGYao-ming ZHANGGuo-ping 《Semiconductor Photonics and Technology》 CAS 2002年第2期65-69,79,共6页
The operation principle of an arrayed waveguide grating(AWG) multiplexer is introduced and the 4×4 AWG with following design parameters is discussed in detail, such as the choice of wavelength, the neighboring ar... The operation principle of an arrayed waveguide grating(AWG) multiplexer is introduced and the 4×4 AWG with following design parameters is discussed in detail, such as the choice of wavelength, the neighboring arrayed waveguide distance ΔL, the channel frequency interval Δf, and the free spectral range. The structure of 4×4 AWG is designed and the result of stimulated test is also given. Analysis shows that the 4×4 AWG is characterized by a wide dynamic range, low crosstalk, better spectrum properties, and a compact structure. 展开更多
关键词 Arrayed waveguide grating Wavelength multiplex DESIGN
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Evolution of Electron Phase Orbits of Multi-photon Nonlinear Compton Scattering in High Power Laser-plasma 被引量:1
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作者 HAODong-shan LüJian 《Semiconductor Photonics and Technology》 CAS 2005年第2期107-110,共4页
The evolution of the electron phase orbits based on the multi-photon nonlinear Compton scattering with the high power laser-plasma is discussed by using Kroll-Morton-Rosenbluth theory. The random evolution of the un-c... The evolution of the electron phase orbits based on the multi-photon nonlinear Compton scattering with the high power laser-plasma is discussed by using Kroll-Morton-Rosenbluth theory. The random evolution of the un-captured electron phase orbits from periodicity to non-periodicity is found after the energy has been exchanged between the electron and photons. With the increase of the absorbed photon number n by an electron,this evolution will be more and more intense, while which is rapidly decreased with the enhancement of the collision non-flexibility ξ and their initial speeds of the electrons and photons,but this evolution is lower than that in the high power laser field. When the electrons are captured by the laser field,the evolution is finished,and the electrons will stably transport,and the photons don’t provide the energy for these electrons any more. 展开更多
关键词 multi-photon nonlinear compton scattering electron phase orbits EVOLUTION
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Optical Properties of Silicon-doped InGaN and GaN Layers
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作者 KANGLing LIUBao-lin CAIJia-fa 《Semiconductor Photonics and Technology》 CAS 2004年第4期248-251,共4页
The optical properties of Silicon-doped InGaN and GaN grown on sapphire by MOCVD have been investigated by photoluminescence (PL) method. At room temperature, the band-gap peak of InGaN is 437.0 nm and its full width ... The optical properties of Silicon-doped InGaN and GaN grown on sapphire by MOCVD have been investigated by photoluminescence (PL) method. At room temperature, the band-gap peak of InGaN is 437.0 nm and its full width of half-maximum (FWHM) is about 14.3 nm. The band-gap peak and FWHM for GaN are 364.4 nm and 9.5 nm, respectively. By changing the temperature from 20 K to 293 K, it is found that the PL intensity of samples decreases but the FWHM broadens with the increasing of the temperature. GaN sample shows red-shift, InGaN sample shows red-blue-red-shift. The temperature dependence of peak energy shift is studied and explained. 展开更多
关键词 nitride compounds FWHM RED-SHIFT BLUE-SHIFT Yellow band
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Spectral Properties of Yellow Fluorescent Powder for White LEDs
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作者 CHENZhu-rong LINXiu-hua 《Semiconductor Photonics and Technology》 CAS 2003年第1期34-36,49,共4页
Much attention has been paid to white LEDs because of their potential applications in the illumination.The doping of rare earth ions plays an important role in the optical properties of yellow fluorescent powder.And m... Much attention has been paid to white LEDs because of their potential applications in the illumination.The doping of rare earth ions plays an important role in the optical properties of yellow fluorescent powder.And mainly aiming to raise the intensity and the luminous rate of the white LEDs and by photoluminescence and electroluminescence,the luminescence spectrum of yellow fluorescent powder bought from different places is measured.Furthermore, the luminous intensity in the normal direction and the angle distribution of half maximum power for the white LEDs packed with cylindrical Φ 5 epoxy on the same blue GaN chips are also measured under the same manufacture conditions. The results show that the yellow fluorescent powder bought from China mainland has higher optical output rate than that bought from China Taiwan and hence is more suitable to fabricate the white LEDs for practical use. 展开更多
关键词 White LEDs Yellow fluorescence Spectral property PL CLC number:TN383 0433.1Document code:A
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Polycrystalline ZnO Films Deposited on Glass by RF Reactive Sputtering
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作者 GONGHeng-xiang HEYun-yao +3 位作者 WangQi-feng JINGuo-juan FANGZe-bo WANGYin-yue 《Semiconductor Photonics and Technology》 CAS 2004年第2期97-100,共4页
Polycrystalline ZnO films were prepared on glass wafer using Zn targets by radio frequency(RF)reactive sputtering technique under different deposition conditions.X-ray diffraction (XRD) and optical transmittance spect... Polycrystalline ZnO films were prepared on glass wafer using Zn targets by radio frequency(RF)reactive sputtering technique under different deposition conditions.X-ray diffraction (XRD) and optical transmittance spectrum were employed to analyze the structure and optical character of the films.The strain and stress in films, as well as the packing density are calculated in terms of refractive index of films measured with an elliptic polarization analyzer.It is the deposition conditions that have great effects on the structural and optical properties of ZnO films.Under the optimal conditions,the only evident peak in XRD spectrum was (002) peak with the full width at half maximum (FWHM) of 0.20° showing the grain size of 42.8 nm.The packing density,the stress in (002) plane and the average optical transmittance in the visible region were about 97%,-1.06×10~9 N/m^2 and 92%, respectively. 展开更多
关键词 ZnO films RF reactive sputtering Preferred orientation Optical transmittance
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Influences of Uncaptured Electron on Energy Conversion of Photon Compton Scattering in High Power Laser-plasma
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作者 ZHENGJing-hua HAOXiao-fei HAODong-shan 《Semiconductor Photonics and Technology》 CAS 2004年第4期285-288,共4页
Using the single particle theory and the non-flexibility collision model of electron and photon, the influence of the uncaptured electrons on the energy conversion efficiency of multi-photon nonlinear Compton scatteri... Using the single particle theory and the non-flexibility collision model of electron and photon, the influence of the uncaptured electrons on the energy conversion efficiency of multi-photon nonlinear Compton scattering in the extra stationary laser-plasma is investigated. It shows that in extra stationary laser-plasma,the uncaptured electrons make the Δω of the scattering frequency of the multi-photon Compton fall down with the increases of the incident radiation electron speed,the materials of the incident collision of electron and photon, and the number of the photons which work with the electrons at the same time. Under the modulation of the uncaptured electrons to the laser field, the energy conversion efficiency between electrons and photons will fall down with the increase of the electron incident radiation speed, using the low-power electrons for incident source, the loss can be efficiently reduced. 展开更多
关键词 Photon Compton scattering Energy conversion Captured electron LASER-PLASMA
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Surface Barrier Models of ZnO
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作者 MAYong WANGWan-lu +1 位作者 LIAOKe-jun KONGChun-yang 《Semiconductor Photonics and Technology》 CAS 2004年第1期31-34,37,共5页
For a low surface barrier, the energy band, barrier height and width of the space charge region at the surface of relatively large grains of ZnO are presented analytically on condition that the electron distribution o... For a low surface barrier, the energy band, barrier height and width of the space charge region at the surface of relatively large grains of ZnO are presented analytically on condition that the electron distribution obeys the Boltzmann statistics. It is shown that the temperature in the space charge distribution factor has an important effect on the energy band, barrier height and width of the space charge region. The depletion approximation is a model in which the temperature in the space charge distribution factor is zero. Our results are better than the depletion approximation. 展开更多
关键词 ZNO Space-charge distribution factor Energy band Surface barrier
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Widening DGD Dynamic Range of DOP-based PMD Monitor Using Band-pass Filter
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作者 DUANGao-yan ZHANGRu ZHANGXiao-guang CHENLin YULi YANGBo-jun 《Semiconductor Photonics and Technology》 CAS 2005年第1期9-11,15,27,共5页
The theoretical and experimental analyses of widening the differential group delay (DGD) dynamic range of degree of polarization(DOP)-based polarization mode dispersion monitor using a band-pass filter are presented.... The theoretical and experimental analyses of widening the differential group delay (DGD) dynamic range of degree of polarization(DOP)-based polarization mode dispersion monitor using a band-pass filter are presented. The experiment shows that the maximum DGD monitoring range is widened up to ~6ps using band-pass filter. At the same time, DOP sensitivity has a little change. The experimental results are in accordance with the numerical ones. 展开更多
关键词 Polarization mode dispersion Degree of polarization Principal state of polarization Band-pass filter
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Effect of Soliton Propagation in Fiber Amplifiers
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作者 SHENTin-gen PANBo 《Semiconductor Photonics and Technology》 CAS 2001年第4期241-246,共6页
The propagation of optical solitons in fiber amplifiers is discussed by considering a model that includes linear high order dispersion, two photon absorption, nonlinear high order dispersion, self induced Ramam and fi... The propagation of optical solitons in fiber amplifiers is discussed by considering a model that includes linear high order dispersion, two photon absorption, nonlinear high order dispersion, self induced Ramam and five order nonlinear effects. Based on travelling wave method, the solutions of the nonlinear Schr dinger equations, and the influence on soliton propagation as well as high order effect in the fiber amplifier are discussed in detail. It is found that because of existing five order nonlinear effect, the solution is not of secant hyperbola type, but shows high gain state of the fiber amplifier which is very favourable to the propagation of solitons. 展开更多
关键词 High order effect Soliton propagation Fiber amplifiers Travelling wave method
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Optical Properties of Window Coatings
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作者 ZHONGDi-sheng ZHANGYi-hong 《Semiconductor Photonics and Technology》 CAS 2001年第1期30-41,共12页
Window coating used for the building in recent years is described. Important design principles, practical coating materials, and attainable optical properties for research-type coatings are introduced. Discussion is c... Window coating used for the building in recent years is described. Important design principles, practical coating materials, and attainable optical properties for research-type coatings are introduced. Discussion is carried out on the spectrally selective coatings, the electrochromic coatings, and the thermochromic coatings. 展开更多
关键词 Window coating Spectrum selected coating Electrochromic coating Thermochromic coating.
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Nonlinear Optical Susceptibility and Refractive Index of Two Polyaniline Families
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作者 ElaminAbdulkader YAOKai-Lun 《Semiconductor Photonics and Technology》 CAS 1999年第4期207-210,225,共5页
By use of the Keldysh non-equilibrium Green’s-function methods, the third harmonic susceptibilities of two polyaniline families, PANI-HCl and PANI-H 3PO 4, are calculated [ x (3) ( ω )≈10 -12 esu]. It was found tha... By use of the Keldysh non-equilibrium Green’s-function methods, the third harmonic susceptibilities of two polyaniline families, PANI-HCl and PANI-H 3PO 4, are calculated [ x (3) ( ω )≈10 -12 esu]. It was found that the third harmonic susceptibility of polyaniline strongly depends on the delocalization of the electrons. The refractive indices n ( λ =589 nm) of PANI-HCl and PANI-H 3PO 4 are calculated by use of three common methods (the Lorentz-Lorentz theoretical model, the Gladstone-Dale group contribution and the Vogel group correlation) based on group contributions to molar refraction. The calculated n values are varied from 1.31 to 1.42 for PANI-HCl and 1.36 to 1.45 for PANI-H 3PO 4. 展开更多
关键词 Delocalization of Electrons Nonlinear Optical Susceptibility POLYANILINE Refractive Index
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Optical Gain of V-groove Zn_(1-x)Cd_x Se/ZnSe Quantum Wires
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作者 HEGuo-min ZHENGYong-mei 《Semiconductor Photonics and Technology》 CAS 2001年第1期1-7,共7页
The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theor... The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions. 展开更多
关键词 Optical gain V-groove quantum wires Hole subband structures
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Investigation on Silicon Thin Film Solar Cells
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作者 LIAOHua LINLi-bin +1 位作者 LIUZu-ming CHENTing-jin 《Semiconductor Photonics and Technology》 CAS 2003年第2期89-94,共6页
The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline si... The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential. 展开更多
关键词 silicon thin film solar cells SUBSTRATE
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