The scalar two-dimensional finite difference time domain (FDTD) method is applied to simulate the mode field distribution of TE 0 of the waveguide grating coupler. Computer simulation shows that the same stable mode f...The scalar two-dimensional finite difference time domain (FDTD) method is applied to simulate the mode field distribution of TE 0 of the waveguide grating coupler. Computer simulation shows that the same stable mode field distribution pattern is obtained through the different kinds of driving sources. It is found that the optical field mode is determined by waveguide structure and optical wavelength other than the driving source.According to the mode field distribution, the optimum coupling efficiency can be predicted. Compared with another numerical methods,the CPU-time and memory elements of computer used by FDTD are much less.展开更多
Vanadium dioxide(VO 2)thin films are used for protection from high-energy laser hits due to their semiconductor-to-metal phase transition experienced during heating at temperature of approximately 68 ℃,which followed...Vanadium dioxide(VO 2)thin films are used for protection from high-energy laser hits due to their semiconductor-to-metal phase transition experienced during heating at temperature of approximately 68 ℃,which followed by a abrupt change of optical behavior, namely from transparent semiconductor state below 68 ℃ to highly reflective metallic state beyond 68 ℃.The preparation and properties of the films are described as well as the primary principle of the device for protection from high energy laser hits. An ion-beam-sputtering system is used to deposit VO 2 thin films.The technique is reactive ion beam sputtering of vanadium at temperature of 200 ℃ on Si, Ge and Si 3N 4 substrates in a well controlled atmosphere of argon with a partial pressure of O 2, followed by a post annealing at 400-550 ℃ with argon gas.The optical transmittance changes from 60% to 4% are obtained within the temperature range from 50 ℃ to 70 ℃. X-ray diffraction (XRD) shows that the films are of single-phase VO 2.展开更多
Different material-doped Raman fiber lasers with very high efficiency operating in continuous-wave are presented.With 1 W Nd∶YVO 4 laser pumping at wavelength of 1 342 nm, single mode output power of above 500 mW (op...Different material-doped Raman fiber lasers with very high efficiency operating in continuous-wave are presented.With 1 W Nd∶YVO 4 laser pumping at wavelength of 1 342 nm, single mode output power of above 500 mW (optical-to-optical conversion efficiency of 50%) is simulated in the range of 1 400-1 500 nm.Using high-germanium,high-phosphate and high-borate silicate fibers as the gain medium,laser output at wavelengths of 1 420,1 450,1 480 and 1 495 nm can be achieved with different geometries,which are just as pumping C-band and L-band distributed Raman fiber amplifiers.展开更多
A diode laser array(DLA)positioned in an external cavity can receive the radiations emitted from its neighboring elements (C 1) and that of itself (S) after being reflected at the DLA facet as well as from the externa...A diode laser array(DLA)positioned in an external cavity can receive the radiations emitted from its neighboring elements (C 1) and that of itself (S) after being reflected at the DLA facet as well as from the external mirror (C 0). Considering the fact that｜C 0/S｜ should be larger than unity if the external cavity is effective,and｜C 1/S｜ should be larger than unity if the phase locking may be established in the external cavity.The requirements on the reflection at the facet of the diode laser array have been specified in terms of the cavity length and reflection coefficient of the external mirror.展开更多
文摘The scalar two-dimensional finite difference time domain (FDTD) method is applied to simulate the mode field distribution of TE 0 of the waveguide grating coupler. Computer simulation shows that the same stable mode field distribution pattern is obtained through the different kinds of driving sources. It is found that the optical field mode is determined by waveguide structure and optical wavelength other than the driving source.According to the mode field distribution, the optimum coupling efficiency can be predicted. Compared with another numerical methods,the CPU-time and memory elements of computer used by FDTD are much less.
文摘Vanadium dioxide(VO 2)thin films are used for protection from high-energy laser hits due to their semiconductor-to-metal phase transition experienced during heating at temperature of approximately 68 ℃,which followed by a abrupt change of optical behavior, namely from transparent semiconductor state below 68 ℃ to highly reflective metallic state beyond 68 ℃.The preparation and properties of the films are described as well as the primary principle of the device for protection from high energy laser hits. An ion-beam-sputtering system is used to deposit VO 2 thin films.The technique is reactive ion beam sputtering of vanadium at temperature of 200 ℃ on Si, Ge and Si 3N 4 substrates in a well controlled atmosphere of argon with a partial pressure of O 2, followed by a post annealing at 400-550 ℃ with argon gas.The optical transmittance changes from 60% to 4% are obtained within the temperature range from 50 ℃ to 70 ℃. X-ray diffraction (XRD) shows that the films are of single-phase VO 2.
文摘Different material-doped Raman fiber lasers with very high efficiency operating in continuous-wave are presented.With 1 W Nd∶YVO 4 laser pumping at wavelength of 1 342 nm, single mode output power of above 500 mW (optical-to-optical conversion efficiency of 50%) is simulated in the range of 1 400-1 500 nm.Using high-germanium,high-phosphate and high-borate silicate fibers as the gain medium,laser output at wavelengths of 1 420,1 450,1 480 and 1 495 nm can be achieved with different geometries,which are just as pumping C-band and L-band distributed Raman fiber amplifiers.
文摘A diode laser array(DLA)positioned in an external cavity can receive the radiations emitted from its neighboring elements (C 1) and that of itself (S) after being reflected at the DLA facet as well as from the external mirror (C 0). Considering the fact that｜C 0/S｜ should be larger than unity if the external cavity is effective,and｜C 1/S｜ should be larger than unity if the phase locking may be established in the external cavity.The requirements on the reflection at the facet of the diode laser array have been specified in terms of the cavity length and reflection coefficient of the external mirror.
