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Effects of Substrate Pretreatment Conditions on Quality of GaN Epilayer
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作者 QINFu-wen GUBiao 《Semiconductor Photonics and Technology》 CAS 2003年第1期26-29,40,共5页
The pure cubic GaN(c-GaN) has been grown on (001)GaAs substrates by ECR-PAMOCVD technique at low temperature using TMGa and high pure N2 as Ga and N sources, respectively. The effects of substrate pretreatment conditi... The pure cubic GaN(c-GaN) has been grown on (001)GaAs substrates by ECR-PAMOCVD technique at low temperature using TMGa and high pure N2 as Ga and N sources, respectively. The effects of substrate pretreatment conditions on quality of cubic GaN epilayer are investigated by the measurements of TEM and XRD.It is found that hydrogen plasma cleaning, nitridation and buffer layer growth are very important for quality of cubic GaN epilayer. 展开更多
关键词 ECR-PAMOCVD Cubic GaN Hydrogen plasma NITRIDATION Buffer layer CLC number:TN312 +.8 Document code:
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Formation Technologies of Fiber Bragg Gratings
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作者 SUNXiaona FENGXiyu 《Semiconductor Photonics and Technology》 CAS 1999年第1期19-24,共6页
The principle of fiber Bragg gratings(FBG) is briefly described. The formation technologies of FBG are systematically given and analyzed. In addition, the experiment is described in detail, e.g.,the phase mask method ... The principle of fiber Bragg gratings(FBG) is briefly described. The formation technologies of FBG are systematically given and analyzed. In addition, the experiment is described in detail, e.g.,the phase mask method is used to write directly the period Bragg gratings into the Ge-doped single mode fiber with KrF excimer UV laser. The results of experiment are also presented and analyzed. 展开更多
关键词 Bragg Grating Fiber Phase Mask Photorefractive Effect
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