We have measured the variation of photoluminescence(PL) in porous silicon with anodization(AO) time,HF soak time or natural oxidation time,and found that the peak value of PL spectrum will shift towards shorter value ...We have measured the variation of photoluminescence(PL) in porous silicon with anodization(AO) time,HF soak time or natural oxidation time,and found that the peak value of PL spectrum will shift towards shorter value as above time is increased.The analyses in experiment and theory show that the quantum confined structures produced by the AO process may be responsible for the blue shift.展开更多
Using a set of traveling wave rate equations,a superluminescent diode with a low facet reflectivity is studied. Analytical expressions of the distributions of carrier density,forward- and backward-propagating photon d...Using a set of traveling wave rate equations,a superluminescent diode with a low facet reflectivity is studied. Analytical expressions of the distributions of carrier density,forward- and backward-propagating photon densities,and gain are obtained at different facet reflectivities.It is shown that the high nonuniform carrier distribution is evident in the case of low facet reflectivity.The results can serve as useful guides in understanding emission mechanism of superluminescent diodes.展开更多
文摘We have measured the variation of photoluminescence(PL) in porous silicon with anodization(AO) time,HF soak time or natural oxidation time,and found that the peak value of PL spectrum will shift towards shorter value as above time is increased.The analyses in experiment and theory show that the quantum confined structures produced by the AO process may be responsible for the blue shift.
文摘Using a set of traveling wave rate equations,a superluminescent diode with a low facet reflectivity is studied. Analytical expressions of the distributions of carrier density,forward- and backward-propagating photon densities,and gain are obtained at different facet reflectivities.It is shown that the high nonuniform carrier distribution is evident in the case of low facet reflectivity.The results can serve as useful guides in understanding emission mechanism of superluminescent diodes.
