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Influence of sintering schedule on the electrical properties of Mn(NO_3)_2-doped Ba_(0.92)Ca_(0.08)TiO_3 PTCR ceramics 被引量:2
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作者 CAOMinghe YUANJun +1 位作者 CAOMingli ZHOUDongxiang 《Rare Metals》 SCIE EI CAS CSCD 2004年第3期274-278,共5页
The relationship of electrical properties of Mn-doped Ba_(0.92)Ca_(0.08)TiO_3PTCR (positive temperature coefficient resistance) ceramics with two sintering schedules wasdiscussed. Using TEM (transmission electron micr... The relationship of electrical properties of Mn-doped Ba_(0.92)Ca_(0.08)TiO_3PTCR (positive temperature coefficient resistance) ceramics with two sintering schedules wasdiscussed. Using TEM (transmission electron microscope) combined with EDS (energy dispersive X-rayspectrometer), the Mn ions distributed at grain boundaries were analyzed. The results show that thePTCR effect of Mn-doped PTCR ceramics is more dependent on the sintering schedule than those of Mnfree. The phenomenon may be caused by the valence states variance of Mn ions segregated at the grainboundaries. 展开更多
关键词 positive temperature coefficient resistance grain boundaries sinteringschedule SEGREGATION potential barrier
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Effects of Sm Substitution on Magnetic and Magneto—Optical Properties of TbCo/Cr Films 被引量:6
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作者 LIZuo-Yi HUANGZhi-Xin LINGen-Qi JINFang LIZhen 《Chinese Physics Letters》 SCIE CAS CSCD 2003年第6期909-911,共3页
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Residual Stress on Surface and Cross-section of Porous Silicon Studied by Micro-Raman Spectroscopy 被引量:8
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作者 雷振坤 亢一澜 +2 位作者 岑皓 胡明 邱宇 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第4期984-986,共3页
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Experimental Study of Capillary Effect in Porous Silicon Using Micro-Raman Spectroscopy and X-Ray Diffraction 被引量:5
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作者 LEIZhen-Kun KANGYi-Lan +2 位作者 QIUYu HUMing CENHao 《Chinese Physics Letters》 SCIE CAS CSCD 2004年第7期1377-1380,共4页
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An Experimental Analysis of Residual Stress Measurements in Porous Silicon Using Micro-Raman Spectroscopy 被引量:5
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作者 雷振坤 亢一澜 +3 位作者 胡明 邱宇 徐晗 牛红攀 《Chinese Physics Letters》 SCIE CAS CSCD 2004年第2期403-405,共3页
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Anomalous Behaviour of the Spectra in Young's Double-Slit Interference Experiments 被引量:4
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作者 PUJi-Xiong CAIChao 《Chinese Physics Letters》 SCIE CAS CSCD 2004年第7期1268-1271,共4页
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Modulation Instability in Biased Photorefractive-Photovoltaic Crystals 被引量:3
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作者 LUKe-Qing ZHAOWei +4 位作者 YANGYan-Long SUNChuan-Dong GAOHong-Wen LIJin-Ping ZHANGYan-Peng 《Chinese Physics Letters》 SCIE CAS CSCD 2004年第6期1086-1088,共3页
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Webbing the LMDS Remote Terminal
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作者 PEIJin-ming SUNHu ZHUShou-zheng 《华东师范大学学报(自然科学版)》 CAS CSCD 北大核心 2004年第3期135-137,共3页
Network management system of LMDS system may be divided into two levels,one is for the whole network called NMS in which the whole access network is included,another is a tool to be used to monitor and configure the l... Network management system of LMDS system may be divided into two levels,one is for the whole network called NMS in which the whole access network is included,another is a tool to be used to monitor and configure the local remote terminals. Specific software can be developed,or one may just telnet to the 展开更多
关键词 网络管理系统 LMDS系统 远程终端 数据挖掘
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Modeling Quantum Transport in Nanoscale Vertical SOI nMOSFET
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作者 TONGJian-nong ZOUXue-chang SHENXu-bang 《Wuhan University Journal of Natural Sciences》 EI CAS 2004年第6期918-920,共3页
The electron transports in micro-architecture semiconductor are simulated using vertical SOI nMOSFET with different models. Some details in transport can be presented by changing channel length, channel thickness and ... The electron transports in micro-architecture semiconductor are simulated using vertical SOI nMOSFET with different models. Some details in transport can be presented by changing channel length, channel thickness and drain voltage. An interesting phenomenon similar to collimation effect in mesoscopic system is observed. This may suggest the quite intriguing possibility that scattering may open new channel in sufficiently narrow devices. Key words semiconductor - MOSFET - transport - mesoscopic system CLC number TN 303 - TN 304 Foundation item: Supported by the National Defense Foundation of China(99J2. 4. 1. JW0514)Biography: TONG Jian-nong(1961-), male, Ph. D candidate, Senior engineer, research direction: IC design. 展开更多
关键词 SEMICONDUCTOR MOSFET transport mesoscopic system
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Analysing Imaging Signals of Negative-Charging Contrast in Scanning Electron Microscopy * 被引量:1
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作者 张海波 冯仁剑 KatsumiURA 《Chinese Physics Letters》 SCIE CAS CSCD 2003年第11期2011-2014,共4页
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Evolvement Complexity in an Artificial Stock Market
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作者 杨春霞 周涛 +2 位作者 周佩玲 刘隽 汤子楠 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第4期1014-1017,共4页
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Effect of Rare Earth Elements on Microwave Characteristics of CoFeZrRE Alloys with Higher Magnetic Loss
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作者 JiangJianjun HeHongyu DengLianwen HeHuahui 《Journal of Rare Earths》 SCIE EI CAS CSCD 2004年第5期639-639,共1页
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Temperature—Induced Magnetization Reorientation in GdFeCo/TbFeCo Exchange—Coupled Double Layer Films
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作者 干福熹 王现英 +2 位作者 张约品 李佐宜 沈德芳 《Chinese Physics Letters》 SCIE CAS CSCD 2003年第8期1359-1361,共3页
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Magnetic Exchange—Coupled Sm(Co,R)/Cr(R=Al,Si,Ti,Nb,Cu)series Films for Ultrahigh—Density Longitudinal Recording Media
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作者 王翔 李佐宜 《Chinese Physics Letters》 SCIE CAS CSCD 2003年第2期281-283,共3页
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Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals
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作者 卢克清 赵卫 +3 位作者 杨延龙 朱香平 李金萍 张彦鹏 《Chinese Physics B》 SCIE EI CAS CSCD 2004年第12期2077-2081,共5页
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Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET
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作者 童建农 邹雪城 沈绪榜 《Chinese Physics B》 SCIE EI CAS CSCD 2004年第11期1815-1819,共5页
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Networks Emerging from the Competition of Pullulation and Decrepitude
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作者 蒋品群 汪秉宏 +4 位作者 周涛 金颖滴 傅忠谦 周佩玲 罗晓曙 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第5期1285-1288,共4页
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Continuum Structures at the Second Dissociation Limit of Hydrogen Molecules
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作者 张彦鹏 甘琛利 +6 位作者 宋建平 余孝军 马瑞琼 葛浩 姜彤 卢克清 E.E.Eyler 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第5期1114-1117,共4页
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Near-Threshold Low Rydberg Depletion Spectroscopy of H2, D2, and HD
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作者 张彦鹏 甘琛利 +6 位作者 宋建平 余孝军 葛浩 马瑞琼 李创社 卢克清 E.E.Eyler 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第5期1110-1113,共4页
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Design and implementation of a clock recovery circuit for fast Ethernet applications
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作者 ZhuQuanqing ZouXuecheng ShenXubang 《Journal of Systems Engineering and Electronics》 SCIE EI CSCD 2004年第4期507-510,共4页
A circuit architechure to realize clock recovery for fast Ethernet applications is presented, whick includies system architecture, modified MueUer Muller algorithm for 100BASE-TX, phase detector for 100BASE-TX and mul... A circuit architechure to realize clock recovery for fast Ethernet applications is presented, whick includies system architecture, modified MueUer Muller algorithm for 100BASE-TX, phase detector for 100BASE-TX and multiple output charge pump PLL. The clock recovery circuit is verified by TSMC 0.35um 1P5M CMOS process. The results show that this clock recovery circuit exactly extracts the timing information. It has advantages over others for simple and easy implementation. 展开更多
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