Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range.Perovskite absorber thin-films have a microcrystalline morphology,characterized by a high density of surface stat...Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range.Perovskite absorber thin-films have a microcrystalline morphology,characterized by a high density of surface states and defects at inter-grain interfaces.In this work,we used dielectric/ferroelectric poly(vinylidene-fluoride-trifluoroethylene)(P(VDF-TrFE))to modify the bulk interfaces and electron transport junction in p-i-n perovskite photodiodes.Our complex work demonstrates that interface engineering with P(VDF-TrFE)induces significant Fermi level pinning,reducing from 4.85 eV for intrinsic perovskite to 4.28 eV for the configuration with dielectric interlayers.Modifying the interfaces in the devices resulted in an increase in the key characteristics of photodiodes compared to pristine devices.The integration of P(VDF-TrFE)into the perovskite film didn’t affect the morphology and crystal structure,but significantly changed the charge transport and device performance.IV curve analysis and 2-diode model calculations showed enhanced shunt properties,a decreased non-ideality factor,and reduced saturation dark current.We have shown that the complex introduction of P(VDF-TrFE)into the absorber’s bulk and on its surface is essential to reduce the impact of the trapping processes.For P(VDF-TrFE)containing devices,we 1112 increased the specific detectivity from 10 to~10 Jones,expanded the linear dynamic range up to 100 dB,and-13 reduced the equivalent noise power to 10 W·Hz-1/2.Reducing non-radiative recombination contributions significantly enhanced device performance,improving rise/fall times from 6.3/10.9µs to 4.6/6.5µs,and achieved photo-response dynamics competitive with state-of-the-art analogs.The cut-off frequency(3dB)increased from 64.8 kHz to 74.8 kHz following the introduction of the dielectric.We also demonstrated long-term stabilization of PPD performance under heat-stress.These results provide new insights into the use of organic dielectrics and an improved understanding of trap-states/ion defect compensation for detectors based on perovskite heterostructures.展开更多
Efficient flexible perovskite solar cells and modules were developed using a combination of SnO2 and mesoporous-TiO2 as a fully solution-processed electron transport layer （ETL）. Cells using such ETLs delivered a ma...Efficient flexible perovskite solar cells and modules were developed using a combination of SnO2 and mesoporous-TiO2 as a fully solution-processed electron transport layer （ETL）. Cells using such ETLs delivered a maximum power conversion efficiency （PCE） of 14.8%, which was 30% higher than the PCE of cells with only SnO2 as the ETL. The presence of a mesoporous TiO2 scaffold layer over SnO2 led to higher rectification ratios, lower series resistances, and higher shunt resistances. The cells were also evaluated under 200 and 400 lx artificial indoor illumination and found to deliver maximum power densities of 9.77 μW/cm^2 （estimated PCE of 12.8%） and 19.2 μW/cm^2 （estimated PCE of 13.3%）, respectively, representing the highest values among flexible photovoltaic technologies reported so far. Furthermore, for the first time, a fully laser-patterned flexible perovskite module was fabricated using a complete three-step laser scribing procedure （P1, P2, P3） with a PCE of 8.8% over an active area of 12 cm^2 under an illumination of 1 sun.展开更多
基金the financial support from Russian Science Foundation with project No.22-19-00812.
文摘Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range.Perovskite absorber thin-films have a microcrystalline morphology,characterized by a high density of surface states and defects at inter-grain interfaces.In this work,we used dielectric/ferroelectric poly(vinylidene-fluoride-trifluoroethylene)(P(VDF-TrFE))to modify the bulk interfaces and electron transport junction in p-i-n perovskite photodiodes.Our complex work demonstrates that interface engineering with P(VDF-TrFE)induces significant Fermi level pinning,reducing from 4.85 eV for intrinsic perovskite to 4.28 eV for the configuration with dielectric interlayers.Modifying the interfaces in the devices resulted in an increase in the key characteristics of photodiodes compared to pristine devices.The integration of P(VDF-TrFE)into the perovskite film didn’t affect the morphology and crystal structure,but significantly changed the charge transport and device performance.IV curve analysis and 2-diode model calculations showed enhanced shunt properties,a decreased non-ideality factor,and reduced saturation dark current.We have shown that the complex introduction of P(VDF-TrFE)into the absorber’s bulk and on its surface is essential to reduce the impact of the trapping processes.For P(VDF-TrFE)containing devices,we 1112 increased the specific detectivity from 10 to~10 Jones,expanded the linear dynamic range up to 100 dB,and-13 reduced the equivalent noise power to 10 W·Hz-1/2.Reducing non-radiative recombination contributions significantly enhanced device performance,improving rise/fall times from 6.3/10.9µs to 4.6/6.5µs,and achieved photo-response dynamics competitive with state-of-the-art analogs.The cut-off frequency(3dB)increased from 64.8 kHz to 74.8 kHz following the introduction of the dielectric.We also demonstrated long-term stabilization of PPD performance under heat-stress.These results provide new insights into the use of organic dielectrics and an improved understanding of trap-states/ion defect compensation for detectors based on perovskite heterostructures.
文摘Efficient flexible perovskite solar cells and modules were developed using a combination of SnO2 and mesoporous-TiO2 as a fully solution-processed electron transport layer （ETL）. Cells using such ETLs delivered a maximum power conversion efficiency （PCE） of 14.8%, which was 30% higher than the PCE of cells with only SnO2 as the ETL. The presence of a mesoporous TiO2 scaffold layer over SnO2 led to higher rectification ratios, lower series resistances, and higher shunt resistances. The cells were also evaluated under 200 and 400 lx artificial indoor illumination and found to deliver maximum power densities of 9.77 μW/cm^2 （estimated PCE of 12.8%） and 19.2 μW/cm^2 （estimated PCE of 13.3%）, respectively, representing the highest values among flexible photovoltaic technologies reported so far. Furthermore, for the first time, a fully laser-patterned flexible perovskite module was fabricated using a complete three-step laser scribing procedure （P1, P2, P3） with a PCE of 8.8% over an active area of 12 cm^2 under an illumination of 1 sun.
