The amorphous TbFeCo films covered with the protective AIN films have been prepared by the rf magnetron sputtering system.It is found that the protective AIN films not only protect rare earth elements from oxidation a...The amorphous TbFeCo films covered with the protective AIN films have been prepared by the rf magnetron sputtering system.It is found that the protective AIN films not only protect rare earth elements from oxidation and enhance magneto-optical Kerr effect but also affect the magnetic properties of the rare earth-transition metal films.The coercivity Hc and perpendicular magnetic anisotropy energy constants K'U1 and KU2 of the films are changed with the thickness of the protective AIN films.It can be explained according to the stress mechanism and the model of single ion anisotropy.展开更多
This paper presents an electrothermodynamic(Born-Haber-type)analysis of field evaporation in the configuration of scanning tunneling microscope,in which the adatom is only partially ionized and evaporated to counter e...This paper presents an electrothermodynamic(Born-Haber-type)analysis of field evaporation in the configuration of scanning tunneling microscope,in which the adatom is only partially ionized and evaporated to counter electrode.As a result a formula was derived,which employed a so-called effective binding energy Aeff.The calculated evaporation field for Au-1,at a tip-sample distance of d=7.23Åand an evaporation rate of 10^(11)s^(-1),is 0.6 V/Å,which agrees well with Chang's experiment[Phys.Rev.Lett.72(1994)574].展开更多
NiO(70 nm)/NiFeCo(5 nm)/Cu(2 nm)/NiFeCo(5 nm)spin-valve multilayers were prepared by electron beam evaporation.It is found that the magnetoresistive(MR)ratio of the as-deposited films is relatively small(about 1.6%)an...NiO(70 nm)/NiFeCo(5 nm)/Cu(2 nm)/NiFeCo(5 nm)spin-valve multilayers were prepared by electron beam evaporation.It is found that the magnetoresistive(MR)ratio of the as-deposited films is relatively small(about 1.6%)and there is no apparent biasing in MR curves of as-deposited multilayers due to weak exchange coupling.Through heat treatment at a proper temperature in a magnetic field,the exchange field of the materials increases and the multilayers show good exchange-biased spin-valve MR character with MR value reaching about 2.5%.The proper temperature range for annealing is 200-250℃.With further increasing temperature,MR ratio drops rapidly.展开更多
A sequence of Ti_(1-x)Al_(x)N films has been prepared by rf reactive magnetron sputtering.The optical and electric properties versus aluminum content x have been studied.Values suitable for magneto-optic protective la...A sequence of Ti_(1-x)Al_(x)N films has been prepared by rf reactive magnetron sputtering.The optical and electric properties versus aluminum content x have been studied.Values suitable for magneto-optic protective layers have been achieved in Ti_(1-x)Al_(x) N thin films with aluminum content x>0.75.X-ray diffraction results show that Ti_(1-x)Al_(x) N thin films in this study are a bcc structure up to x=0.75,further increase in the aluminum content gives a wurtzite structure.All of the results show that the optical and electric properties of Ti_(1-x)Al_(x) N films might be related to the crystal structure.展开更多
1 Introduction Since single crystal magnetic films which have multiple layers with the same magnetization such as LaYIG/GGG/LaYIG film were first made by the authors, they have been widely used in microwave delay line...1 Introduction Since single crystal magnetic films which have multiple layers with the same magnetization such as LaYIG/GGG/LaYIG film were first made by the authors, they have been widely used in microwave delay line with linear dispersion and other devices. Recently ferromagnetic resonance （FMR） and magnetostatic wave propagation characteristics of similar multi-layered film have been studied by many authors, whichris important for the multi-layered film to be used in microwave region. But until now many important characteristics of the multi-layered film have not been well understood. The direction and magnitude of uniaxial anisotropy effective field H<sub>11</sub>, the widening of FMR linewidth △H,展开更多
Joining the bulk high T_c superconducting ceramics is an unavoidable problem people will face in the application of the new material. The primary requirement is that the joints have to have the superconductivities sim...Joining the bulk high T_c superconducting ceramics is an unavoidable problem people will face in the application of the new material. The primary requirement is that the joints have to have the superconductivities similar to those of the bulk materials. That means the joints must have the same composition with the bulk materials. Fusion welding of the ceramies is thought to be the most reliable and efficient joining process for oxide ceramics.展开更多
Due to the applications in electronics and optics in the past two decades, ferroelectricthin films (BaTiO<sub>3</sub>, PbTiO<sub>3</sub>, (Pb<sub>1-x</sub>La<sub>x</sub>...Due to the applications in electronics and optics in the past two decades, ferroelectricthin films (BaTiO<sub>3</sub>, PbTiO<sub>3</sub>, (Pb<sub>1-x</sub>La<sub>x</sub>)(Zr<sub>y</sub>Ti<sub>1-y</sub>)O<sub>3</sub>（PLZT x/y/1-y）, LiNbO<sub>3</sub>, Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>,etc.)have been widely investigated. Especially, ferroelectric thin film memory, combining the ad-vantage of semiconductor memory with that of magnetic memory, has properties including highspeed, high density, nonvolatility and good radiation hardness, and can be compatible展开更多
Due to many particular characteristics of ferroelectric thin films, such as ferroelectric switching characteristics, piezoelectric effect, pyroelectric effect,electrooptic and sound-optic effect, nonlinear optics effe...Due to many particular characteristics of ferroelectric thin films, such as ferroelectric switching characteristics, piezoelectric effect, pyroelectric effect,electrooptic and sound-optic effect, nonlinear optics effect, etc., ferroelectric thin films have wide applications in microelectronics and optocelectronics. Especially success in ferroelectric memory based on ferroelectric thin films, which show good properties展开更多
文摘The amorphous TbFeCo films covered with the protective AIN films have been prepared by the rf magnetron sputtering system.It is found that the protective AIN films not only protect rare earth elements from oxidation and enhance magneto-optical Kerr effect but also affect the magnetic properties of the rare earth-transition metal films.The coercivity Hc and perpendicular magnetic anisotropy energy constants K'U1 and KU2 of the films are changed with the thickness of the protective AIN films.It can be explained according to the stress mechanism and the model of single ion anisotropy.
基金Supported by the National Natural Science Foundation of China under Grant No.29403020partly by the State Key Laboratory of Wuhan University of Technology for Advanced New Technique of Material Synthesis and Process。
文摘This paper presents an electrothermodynamic(Born-Haber-type)analysis of field evaporation in the configuration of scanning tunneling microscope,in which the adatom is only partially ionized and evaporated to counter electrode.As a result a formula was derived,which employed a so-called effective binding energy Aeff.The calculated evaporation field for Au-1,at a tip-sample distance of d=7.23Åand an evaporation rate of 10^(11)s^(-1),is 0.6 V/Å,which agrees well with Chang's experiment[Phys.Rev.Lett.72(1994)574].
文摘NiO(70 nm)/NiFeCo(5 nm)/Cu(2 nm)/NiFeCo(5 nm)spin-valve multilayers were prepared by electron beam evaporation.It is found that the magnetoresistive(MR)ratio of the as-deposited films is relatively small(about 1.6%)and there is no apparent biasing in MR curves of as-deposited multilayers due to weak exchange coupling.Through heat treatment at a proper temperature in a magnetic field,the exchange field of the materials increases and the multilayers show good exchange-biased spin-valve MR character with MR value reaching about 2.5%.The proper temperature range for annealing is 200-250℃.With further increasing temperature,MR ratio drops rapidly.
基金Supported by Doctoral Programm Foundation of State Education Commission。
文摘A sequence of Ti_(1-x)Al_(x)N films has been prepared by rf reactive magnetron sputtering.The optical and electric properties versus aluminum content x have been studied.Values suitable for magneto-optic protective layers have been achieved in Ti_(1-x)Al_(x) N thin films with aluminum content x>0.75.X-ray diffraction results show that Ti_(1-x)Al_(x) N thin films in this study are a bcc structure up to x=0.75,further increase in the aluminum content gives a wurtzite structure.All of the results show that the optical and electric properties of Ti_(1-x)Al_(x) N films might be related to the crystal structure.
基金Project supported by the National Natural Science Foundation of China.
文摘1 Introduction Since single crystal magnetic films which have multiple layers with the same magnetization such as LaYIG/GGG/LaYIG film were first made by the authors, they have been widely used in microwave delay line with linear dispersion and other devices. Recently ferromagnetic resonance （FMR） and magnetostatic wave propagation characteristics of similar multi-layered film have been studied by many authors, whichris important for the multi-layered film to be used in microwave region. But until now many important characteristics of the multi-layered film have not been well understood. The direction and magnitude of uniaxial anisotropy effective field H<sub>11</sub>, the widening of FMR linewidth △H,
文摘Joining the bulk high T_c superconducting ceramics is an unavoidable problem people will face in the application of the new material. The primary requirement is that the joints have to have the superconductivities similar to those of the bulk materials. That means the joints must have the same composition with the bulk materials. Fusion welding of the ceramies is thought to be the most reliable and efficient joining process for oxide ceramics.
基金Project supported by the National 863 High Technology Program of China.
文摘Due to the applications in electronics and optics in the past two decades, ferroelectricthin films (BaTiO<sub>3</sub>, PbTiO<sub>3</sub>, (Pb<sub>1-x</sub>La<sub>x</sub>)(Zr<sub>y</sub>Ti<sub>1-y</sub>)O<sub>3</sub>（PLZT x/y/1-y）, LiNbO<sub>3</sub>, Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>,etc.)have been widely investigated. Especially, ferroelectric thin film memory, combining the ad-vantage of semiconductor memory with that of magnetic memory, has properties including highspeed, high density, nonvolatility and good radiation hardness, and can be compatible
文摘Due to many particular characteristics of ferroelectric thin films, such as ferroelectric switching characteristics, piezoelectric effect, pyroelectric effect,electrooptic and sound-optic effect, nonlinear optics effect, etc., ferroelectric thin films have wide applications in microelectronics and optocelectronics. Especially success in ferroelectric memory based on ferroelectric thin films, which show good properties
