The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications.These materials are promising candidates for next-generation photodetectors(...The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications.These materials are promising candidates for next-generation photodetectors(PDs)due to their unique optoelectronic properties and flexible synthesis routes.This review explores the approaches used in the development and use of optoelectronic devices made of different nanoscale perovskite architectures,including quantum dots,nanosheets,nanorods,nanowires,and nanocrystals.Through a thorough analysis of recent literature,the review also addresses common issues like the mechanisms underlying the degradation of perovskite PDs and offers perspectives on potential solutions to improve stability and scalability that impede widespread implementation.In addition,it highlights that photodetection encompasses the detection of light fields in dimensions other than light intensity and suggests potential avenues for future research to overcome these obstacles and fully realize the potential of nanoscale perovskite materials in state-of-the-art photodetection systems.This review provides a comprehensive overview of nanoscale perovskite PDs and guides future research efforts towards improved performance and wider applicability,making it a valuable resource for researchers.展开更多
In this work,W/β-Ga_(2)O_(3)Schottky barrier diodes,prepared using a confined magnetic field-based sputtering method,were analyzed at different operation temperatures.Firstly,Schottky barrier height increased with in...In this work,W/β-Ga_(2)O_(3)Schottky barrier diodes,prepared using a confined magnetic field-based sputtering method,were analyzed at different operation temperatures.Firstly,Schottky barrier height increased with increasing temperature from 100 to 300 K and reached 1.03 eV at room temperature.The ideality factor decreased with increasing temperature and it was higher than 2 at 100 K.This apparent high value was related to the tunneling effect.Secondly,the series and on-resistances decreased with increasing operation temperature.Finally,the interfacial dislocation was extracted from the tunneling current.A high dislocation density was found,which indicates the domination of tunneling through dislocation in the transport mecha-nism.These findings are evidently helpful in designing better performance devices.展开更多
MXene has garnered widespread recognition in the scientific com-munity due to its remarkable properties,including excellent thermal stability,high conductivity,good hydrophilicity and dispersibility,easy processabilit...MXene has garnered widespread recognition in the scientific com-munity due to its remarkable properties,including excellent thermal stability,high conductivity,good hydrophilicity and dispersibility,easy processability,tunable surface properties,and admirable flexibility.MXenes have been categorized into different families based on the number of M and X layers in M_(n+1)X_(n),such as M_(2)X,M_(3)X_(2),M_(4)X_(3),and,recently,M_(5)X_(4).Among these families,M_(2)X and M_(3)X_(2),par-ticularly Ti_(3)C_(2),have been greatly explored while limited studies have been given to M_(5)X_(4)MXene synthesis.Meanwhile,studies on the M_(4)X_(3)MXene family have developed recently,hence,demanding a compilation of evaluated studies.Herein,this review provides a systematic overview of the latest advancements in M_(4)X_(3)MXenes,focusing on their properties and applications in energy storage devices.The objective of this review is to provide guidance to researchers on fostering M_(4)X_(3)MXene-based nanomaterials,not only for energy storage devices but also for broader applications.展开更多
Enhancing the efficiency of bifunctional electrocatalysts for the hydrogen evolution reaction(HER)and oxygen evolution reaction(OER)is crucial for sustainable water splitting.In this study,the electrochemical performa...Enhancing the efficiency of bifunctional electrocatalysts for the hydrogen evolution reaction(HER)and oxygen evolution reaction(OER)is crucial for sustainable water splitting.In this study,the electrochemical performance of Cu-doped mixed spinel cobalt ferrites(CuCoFe)was systematically investigated,focusing on the role of oxygen vacancies in catalytic activity.Cu doping optimized charge transfer modulated the electronic structure and promoted oxygen vacancy formation,collectively enhancing reaction kinetics.Among the synthesized materials,CuCoFe_(0.5)exhibited the lowest overpotential,with 280 mV for OER and−143 mV for HER,alongside a cell voltage of 1.66 V during 20 h of continuous water splitting.The appreciable catalytic performance of CuCoFe0.5 was attributed to its enhanced electrochemically active surface area(ECSA)and abundant oxygen vacancies,which serve as active sites for HER and OER.Furthermore,its long-term stability highlights its potential as a durable electrocatalyst.The electrochemical performance forecasting(30%)was done using LSTM memory cell.Overall,study underscores the critical role of oxygen vacancies in improving catalytic efficiency,offering valuable insights for designing next-generation spinel ferrite-based electrocatalysts for water splitting.展开更多
Surface-emitting optoelectronic devices such as vertical cavity surface emitting lasers are important for various applications.However,the devices are typically grown on expensive and small-size III-V substrates.Si su...Surface-emitting optoelectronic devices such as vertical cavity surface emitting lasers are important for various applications.However,the devices are typically grown on expensive and small-size III-V substrates.Si substrates can offer much improved scalability,lower cost and higher thermal properties but present significant challenges such as the formation of crystalline defects from the heteroepitaxial growth of III-V semiconductors on Si.Here,we propose multifunctional metamorphic In0.1Ga0.9As/AlAs distributed Bragg reflectors(DBRs)on Si which serve as a bottom mirror with a high reflectivity of 99.8%while simultaneously reducing the crystalline defect density by a factor of three,compared to GaAs/AlAs DBR on Si.The proposed DBR structure also exhibits a crack-free and exceptionally smooth surface morphology with rootmean-square roughness of 1.2 nm,which is five times smoother than the conventional GaAs/AlAs structure on Si.Furthermore,as proof of concept,InAs quantum dot surface-emitting diodes are fabricated on the metamorphic III-V DBR/Si templates and their performances are analyzed in comparison to those grown on native GaAs wafers.A narrow electroluminescence linewidth of 11.5 meV is observed,confirming that the multifunctional metamorphic DBR is promising for a scalable and more techno-economic surface-emitting III-V optoelectronics grown on Si substrates.展开更多
As social networks and related data processes have grown exponentially in complexity,the efficient resolution of combinatorial optimization problems has become increasingly crucial.Recent advancements in probabilistic...As social networks and related data processes have grown exponentially in complexity,the efficient resolution of combinatorial optimization problems has become increasingly crucial.Recent advancements in probabilistic computing approaches have demonstrated significant potential for addressing these problems more efficiently than conventional deterministic computing methods.In this study,we demonstrate a highly durable probabilistic bit(pbit)device utilizing two-dimensional materials,specifically hexagonal boron nitride(h-BN)and tin disulfide(SnS2)nanosheets.By leveraging the inherently stochastic nature of electron trapping and detrapping at the h-BN/SnS2 interface,the device achieves durable probabilistic fluctuations over 108 cycles with minimal energy consumption.To mitigate the static power consumption,we integrated an active switch in series with a p-bit device,replacing conventional resistors.Furthermore,employing the pulse width as the control variable for probabilistic switching significantly enhances noise immunity.We demonstrate the practical application of the proposed p-bit device in implementing invertible Boolean logic gates and subsequent integer factorization,highlighting its potential for solving complex combinatorial optimization problems and extending its applicability to real-world scenarios such as cryptographic systems.展开更多
基金supported by the National Research Foundation of Korea(NRF)grant funded by the Korean government(MSIT)(No.RS-2022–00165798)Anhui Natural Science Foundation(No.2308085MF211)The authors extend their appreciation to the Deanship of Research and Graduate Studies at King Khalid University for funding this work through Large Research Project under Grant Number(R.G.P.2/491/45).
文摘The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications.These materials are promising candidates for next-generation photodetectors(PDs)due to their unique optoelectronic properties and flexible synthesis routes.This review explores the approaches used in the development and use of optoelectronic devices made of different nanoscale perovskite architectures,including quantum dots,nanosheets,nanorods,nanowires,and nanocrystals.Through a thorough analysis of recent literature,the review also addresses common issues like the mechanisms underlying the degradation of perovskite PDs and offers perspectives on potential solutions to improve stability and scalability that impede widespread implementation.In addition,it highlights that photodetection encompasses the detection of light fields in dimensions other than light intensity and suggests potential avenues for future research to overcome these obstacles and fully realize the potential of nanoscale perovskite materials in state-of-the-art photodetection systems.This review provides a comprehensive overview of nanoscale perovskite PDs and guides future research efforts towards improved performance and wider applicability,making it a valuable resource for researchers.
基金supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.2020R1A2C1013693)the Technology Innovation Program(20016102,Development of 1.2k V Gallium oxide power semiconductor devices technology and RS2022-00144027,Development of 1.2k V-class low-loss gallium oxide transistor)by the Ministry of Trade,Industry,and Energy(MOTIE,Korea)
文摘In this work,W/β-Ga_(2)O_(3)Schottky barrier diodes,prepared using a confined magnetic field-based sputtering method,were analyzed at different operation temperatures.Firstly,Schottky barrier height increased with increasing temperature from 100 to 300 K and reached 1.03 eV at room temperature.The ideality factor decreased with increasing temperature and it was higher than 2 at 100 K.This apparent high value was related to the tunneling effect.Secondly,the series and on-resistances decreased with increasing operation temperature.Finally,the interfacial dislocation was extracted from the tunneling current.A high dislocation density was found,which indicates the domination of tunneling through dislocation in the transport mecha-nism.These findings are evidently helpful in designing better performance devices.
基金supported by the Hong Kong Research Grants Council(Project Number CityU 11218420)the Deanship of Scientific Research at King Khalid University Saudi Arabia for funding through research groups program under Grant Number R.G.P.2/593/44.
文摘MXene has garnered widespread recognition in the scientific com-munity due to its remarkable properties,including excellent thermal stability,high conductivity,good hydrophilicity and dispersibility,easy processability,tunable surface properties,and admirable flexibility.MXenes have been categorized into different families based on the number of M and X layers in M_(n+1)X_(n),such as M_(2)X,M_(3)X_(2),M_(4)X_(3),and,recently,M_(5)X_(4).Among these families,M_(2)X and M_(3)X_(2),par-ticularly Ti_(3)C_(2),have been greatly explored while limited studies have been given to M_(5)X_(4)MXene synthesis.Meanwhile,studies on the M_(4)X_(3)MXene family have developed recently,hence,demanding a compilation of evaluated studies.Herein,this review provides a systematic overview of the latest advancements in M_(4)X_(3)MXenes,focusing on their properties and applications in energy storage devices.The objective of this review is to provide guidance to researchers on fostering M_(4)X_(3)MXene-based nanomaterials,not only for energy storage devices but also for broader applications.
基金Author P.C.is thankful to SARTHI,Pune,Maharashtra for the research fellowship(No.2023/2024-25/1773)Author S.S.is thankful to National Research Foundation(NRF)South Korea for Invited Research Scientist under Brain Pool Program(Brain Pool Grant number:RS-2024-00445146)+1 种基金supported by the National Research Foundation(NRF)of Korea,funded by the Ministry of Science and ICT(RS-2025-02303505)Authors are thankful to the DST,New Delhi for DST-FIST(No/SR/FST/College-151/2013(C))and the DBT,New-Delhi for DBT-Star College Scheme(HRD-11011/11/2022-HRD-DBT)to Jaysingpur College,Jaysingpur.
文摘Enhancing the efficiency of bifunctional electrocatalysts for the hydrogen evolution reaction(HER)and oxygen evolution reaction(OER)is crucial for sustainable water splitting.In this study,the electrochemical performance of Cu-doped mixed spinel cobalt ferrites(CuCoFe)was systematically investigated,focusing on the role of oxygen vacancies in catalytic activity.Cu doping optimized charge transfer modulated the electronic structure and promoted oxygen vacancy formation,collectively enhancing reaction kinetics.Among the synthesized materials,CuCoFe_(0.5)exhibited the lowest overpotential,with 280 mV for OER and−143 mV for HER,alongside a cell voltage of 1.66 V during 20 h of continuous water splitting.The appreciable catalytic performance of CuCoFe0.5 was attributed to its enhanced electrochemically active surface area(ECSA)and abundant oxygen vacancies,which serve as active sites for HER and OER.Furthermore,its long-term stability highlights its potential as a durable electrocatalyst.The electrochemical performance forecasting(30%)was done using LSTM memory cell.Overall,study underscores the critical role of oxygen vacancies in improving catalytic efficiency,offering valuable insights for designing next-generation spinel ferrite-based electrocatalysts for water splitting.
基金supported by Korea National Research Foundation(RS-2021-NR057301,RS-2024–00437570)KIST institutional project(Grant 2E33542).
文摘Surface-emitting optoelectronic devices such as vertical cavity surface emitting lasers are important for various applications.However,the devices are typically grown on expensive and small-size III-V substrates.Si substrates can offer much improved scalability,lower cost and higher thermal properties but present significant challenges such as the formation of crystalline defects from the heteroepitaxial growth of III-V semiconductors on Si.Here,we propose multifunctional metamorphic In0.1Ga0.9As/AlAs distributed Bragg reflectors(DBRs)on Si which serve as a bottom mirror with a high reflectivity of 99.8%while simultaneously reducing the crystalline defect density by a factor of three,compared to GaAs/AlAs DBR on Si.The proposed DBR structure also exhibits a crack-free and exceptionally smooth surface morphology with rootmean-square roughness of 1.2 nm,which is five times smoother than the conventional GaAs/AlAs structure on Si.Furthermore,as proof of concept,InAs quantum dot surface-emitting diodes are fabricated on the metamorphic III-V DBR/Si templates and their performances are analyzed in comparison to those grown on native GaAs wafers.A narrow electroluminescence linewidth of 11.5 meV is observed,confirming that the multifunctional metamorphic DBR is promising for a scalable and more techno-economic surface-emitting III-V optoelectronics grown on Si substrates.
基金National Research Foundation of Korea,Grant/Award Numbers:RS-2024-00334953,RS-2024-00449412Institute of Information&communications Technology Planning&Evaluation,Grant/Award Number:RS-2024-00466640。
文摘As social networks and related data processes have grown exponentially in complexity,the efficient resolution of combinatorial optimization problems has become increasingly crucial.Recent advancements in probabilistic computing approaches have demonstrated significant potential for addressing these problems more efficiently than conventional deterministic computing methods.In this study,we demonstrate a highly durable probabilistic bit(pbit)device utilizing two-dimensional materials,specifically hexagonal boron nitride(h-BN)and tin disulfide(SnS2)nanosheets.By leveraging the inherently stochastic nature of electron trapping and detrapping at the h-BN/SnS2 interface,the device achieves durable probabilistic fluctuations over 108 cycles with minimal energy consumption.To mitigate the static power consumption,we integrated an active switch in series with a p-bit device,replacing conventional resistors.Furthermore,employing the pulse width as the control variable for probabilistic switching significantly enhances noise immunity.We demonstrate the practical application of the proposed p-bit device in implementing invertible Boolean logic gates and subsequent integer factorization,highlighting its potential for solving complex combinatorial optimization problems and extending its applicability to real-world scenarios such as cryptographic systems.
