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Highly durable and energy-efficient probabilistic bits based on h-BN/SnS_(2) interface for integer factorization
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作者 Joon-Kyu Han Jun-Young Park +3 位作者 Shania Rehman Muhammad Farooq Khan Moon-Seok Kim Sungho Kim 《InfoMat》 2025年第7期143-155,共13页
As social networks and related data processes have grown exponentially in complexity,the efficient resolution of combinatorial optimization problems has become increasingly crucial.Recent advancements in probabilistic... As social networks and related data processes have grown exponentially in complexity,the efficient resolution of combinatorial optimization problems has become increasingly crucial.Recent advancements in probabilistic computing approaches have demonstrated significant potential for addressing these problems more efficiently than conventional deterministic computing methods.In this study,we demonstrate a highly durable probabilistic bit(pbit)device utilizing two-dimensional materials,specifically hexagonal boron nitride(h-BN)and tin disulfide(SnS2)nanosheets.By leveraging the inherently stochastic nature of electron trapping and detrapping at the h-BN/SnS2 interface,the device achieves durable probabilistic fluctuations over 108 cycles with minimal energy consumption.To mitigate the static power consumption,we integrated an active switch in series with a p-bit device,replacing conventional resistors.Furthermore,employing the pulse width as the control variable for probabilistic switching significantly enhances noise immunity.We demonstrate the practical application of the proposed p-bit device in implementing invertible Boolean logic gates and subsequent integer factorization,highlighting its potential for solving complex combinatorial optimization problems and extending its applicability to real-world scenarios such as cryptographic systems. 展开更多
关键词 integer factorization interface trap invertible logic gate probabilistic bit probabilistic computing
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High-performance piezocatalytic hydrogen evolution over bismuth oxyhalides with halogen-dependent piezoelectricity and surface activity
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作者 Hao-Ran Li Yu-Ming Chen +5 位作者 Cheng-Chao Jin Ai-Ze Hao Shania Rehmand Bing-Bing Chen Fei Wang Dai-Ming Liu 《Rare Metals》 2025年第8期5475-5485,共11页
The piezocatalytic characteristic of bismuth oxyhalides(BiOX,X=Cl,Br,and I) has been increasingly capturing interest for its potential in hydrogen evolution reaction(HER) through water splitting process.The performanc... The piezocatalytic characteristic of bismuth oxyhalides(BiOX,X=Cl,Br,and I) has been increasingly capturing interest for its potential in hydrogen evolution reaction(HER) through water splitting process.The performance regarding these piezocatalysts is closely related to the halogen element present in BiOX;yet,the specific influence mechanisms remain unclear.In this study,we prepared BiOX catalysts via a hydrothermal process and explored their piezocatalytic HER activities.Owing to the layered bismuth s tructure,the resulting sheet-like piezocatalysts can efficiently capture the mechanic stimulus and allow the robust piezoelectric field,contributing to the piezocatalytic operation.It demonstrates that the BiOBr achieves a remarkable piezocatalytic HER efficiency of 813 μmol g^(-1)h^(-1),outperforming BiOCl and BiOI.The density functional theory(DFT)calculation results reveal that the BiOBr with moderate halogen atom size and lattice layer spacing possesses the strongest piezoelectricity,which enhances the separation and transfer of electron-hole pairs.Meanwhile,the exposed Br atom layer facilitates a large Bader charge and a low surface Gibbs free energy(ΔG_(H)),enhancing charge transfer for hydrogen reduction at the solid-liquid surface,thereby increasing the HER efficiency.This research sheds light on the halogen-dependent piezocatalytic activity of BiOX catalysts,offering valuable insights for the development of high-performance piezocatalysts. 展开更多
关键词 Bismuth oxyhalide Halogen Piezocatalysis HER Hydrogen energy
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