This work presents a systematic analysis of proton-induced total ionizing dose(TID)effects in 1.2 k V silicon carbide(SiC)power devices with various edge termination structures.Three edge terminations including ring-a...This work presents a systematic analysis of proton-induced total ionizing dose(TID)effects in 1.2 k V silicon carbide(SiC)power devices with various edge termination structures.Three edge terminations including ring-assisted junction termination extension(RA-JTE),multiple floating zone JTE(MFZ-JTE),and field limiting rings(FLR)were fabricated and irradiated with45 Me V protons at fluences ranging from 1×10^(12) to 1×10^(14) cm^(-2).Experimental results,supported by TCAD simulations,show that the RA-JTE structure maintained stable breakdown performance with less than 1%variation due to its effective electric field redistribution by multiple P+rings.In contrast,MFZ-JTE and FLR exhibit breakdown voltage shifts of 6.1%and 15.2%,respectively,under the highest fluence.These results demonstrate the superior radiation tolerance of the RA-JTE structure under TID conditions and provide practical design guidance for radiation-hardened Si C power devices in space and other highradiation environments.展开更多
The piezocatalytic characteristic of bismuth oxyhalides(BiOX,X=Cl,Br,and I) has been increasingly capturing interest for its potential in hydrogen evolution reaction(HER) through water splitting process.The performanc...The piezocatalytic characteristic of bismuth oxyhalides(BiOX,X=Cl,Br,and I) has been increasingly capturing interest for its potential in hydrogen evolution reaction(HER) through water splitting process.The performance regarding these piezocatalysts is closely related to the halogen element present in BiOX;yet,the specific influence mechanisms remain unclear.In this study,we prepared BiOX catalysts via a hydrothermal process and explored their piezocatalytic HER activities.Owing to the layered bismuth s tructure,the resulting sheet-like piezocatalysts can efficiently capture the mechanic stimulus and allow the robust piezoelectric field,contributing to the piezocatalytic operation.It demonstrates that the BiOBr achieves a remarkable piezocatalytic HER efficiency of 813 μmol g^(-1)h^(-1),outperforming BiOCl and BiOI.The density functional theory(DFT)calculation results reveal that the BiOBr with moderate halogen atom size and lattice layer spacing possesses the strongest piezoelectricity,which enhances the separation and transfer of electron-hole pairs.Meanwhile,the exposed Br atom layer facilitates a large Bader charge and a low surface Gibbs free energy(ΔG_(H)),enhancing charge transfer for hydrogen reduction at the solid-liquid surface,thereby increasing the HER efficiency.This research sheds light on the halogen-dependent piezocatalytic activity of BiOX catalysts,offering valuable insights for the development of high-performance piezocatalysts.展开更多
As social networks and related data processes have grown exponentially in complexity,the efficient resolution of combinatorial optimization problems has become increasingly crucial.Recent advancements in probabilistic...As social networks and related data processes have grown exponentially in complexity,the efficient resolution of combinatorial optimization problems has become increasingly crucial.Recent advancements in probabilistic computing approaches have demonstrated significant potential for addressing these problems more efficiently than conventional deterministic computing methods.In this study,we demonstrate a highly durable probabilistic bit(pbit)device utilizing two-dimensional materials,specifically hexagonal boron nitride(h-BN)and tin disulfide(SnS2)nanosheets.By leveraging the inherently stochastic nature of electron trapping and detrapping at the h-BN/SnS2 interface,the device achieves durable probabilistic fluctuations over 108 cycles with minimal energy consumption.To mitigate the static power consumption,we integrated an active switch in series with a p-bit device,replacing conventional resistors.Furthermore,employing the pulse width as the control variable for probabilistic switching significantly enhances noise immunity.We demonstrate the practical application of the proposed p-bit device in implementing invertible Boolean logic gates and subsequent integer factorization,highlighting its potential for solving complex combinatorial optimization problems and extending its applicability to real-world scenarios such as cryptographic systems.展开更多
基金supported by the IITP(Institute for Information&Communications Technology Planning&Evaluation)under the ITRC(Information Technology Research Center)support program(IITP-2025-RS-2024-00438288)grant funded by the Korea government(MSIT)+1 种基金National Research Council of Science&Technology(NST)grant by the MSIT(Aerospace Semiconductor Strategy Research Project No.GTL25051-000)supported by the IC Design Education Center(IDEC),Korea。
文摘This work presents a systematic analysis of proton-induced total ionizing dose(TID)effects in 1.2 k V silicon carbide(SiC)power devices with various edge termination structures.Three edge terminations including ring-assisted junction termination extension(RA-JTE),multiple floating zone JTE(MFZ-JTE),and field limiting rings(FLR)were fabricated and irradiated with45 Me V protons at fluences ranging from 1×10^(12) to 1×10^(14) cm^(-2).Experimental results,supported by TCAD simulations,show that the RA-JTE structure maintained stable breakdown performance with less than 1%variation due to its effective electric field redistribution by multiple P+rings.In contrast,MFZ-JTE and FLR exhibit breakdown voltage shifts of 6.1%and 15.2%,respectively,under the highest fluence.These results demonstrate the superior radiation tolerance of the RA-JTE structure under TID conditions and provide practical design guidance for radiation-hardened Si C power devices in space and other highradiation environments.
基金financially supported by the Natural Science Foundation of Shandong Province(No.ZR2023MB151)the Natural Science Foundation of Shandong Province for Excellent Young Scholars(No.ZR2022YQ13)+1 种基金the Science and Technology Special Project of Qingdao(No.24-1-8-xdny-18nsh)the Taishan Scholar Project of Shandong Province(No.tsqn202211159)
文摘The piezocatalytic characteristic of bismuth oxyhalides(BiOX,X=Cl,Br,and I) has been increasingly capturing interest for its potential in hydrogen evolution reaction(HER) through water splitting process.The performance regarding these piezocatalysts is closely related to the halogen element present in BiOX;yet,the specific influence mechanisms remain unclear.In this study,we prepared BiOX catalysts via a hydrothermal process and explored their piezocatalytic HER activities.Owing to the layered bismuth s tructure,the resulting sheet-like piezocatalysts can efficiently capture the mechanic stimulus and allow the robust piezoelectric field,contributing to the piezocatalytic operation.It demonstrates that the BiOBr achieves a remarkable piezocatalytic HER efficiency of 813 μmol g^(-1)h^(-1),outperforming BiOCl and BiOI.The density functional theory(DFT)calculation results reveal that the BiOBr with moderate halogen atom size and lattice layer spacing possesses the strongest piezoelectricity,which enhances the separation and transfer of electron-hole pairs.Meanwhile,the exposed Br atom layer facilitates a large Bader charge and a low surface Gibbs free energy(ΔG_(H)),enhancing charge transfer for hydrogen reduction at the solid-liquid surface,thereby increasing the HER efficiency.This research sheds light on the halogen-dependent piezocatalytic activity of BiOX catalysts,offering valuable insights for the development of high-performance piezocatalysts.
基金National Research Foundation of Korea,Grant/Award Numbers:RS-2024-00334953,RS-2024-00449412Institute of Information&communications Technology Planning&Evaluation,Grant/Award Number:RS-2024-00466640。
文摘As social networks and related data processes have grown exponentially in complexity,the efficient resolution of combinatorial optimization problems has become increasingly crucial.Recent advancements in probabilistic computing approaches have demonstrated significant potential for addressing these problems more efficiently than conventional deterministic computing methods.In this study,we demonstrate a highly durable probabilistic bit(pbit)device utilizing two-dimensional materials,specifically hexagonal boron nitride(h-BN)and tin disulfide(SnS2)nanosheets.By leveraging the inherently stochastic nature of electron trapping and detrapping at the h-BN/SnS2 interface,the device achieves durable probabilistic fluctuations over 108 cycles with minimal energy consumption.To mitigate the static power consumption,we integrated an active switch in series with a p-bit device,replacing conventional resistors.Furthermore,employing the pulse width as the control variable for probabilistic switching significantly enhances noise immunity.We demonstrate the practical application of the proposed p-bit device in implementing invertible Boolean logic gates and subsequent integer factorization,highlighting its potential for solving complex combinatorial optimization problems and extending its applicability to real-world scenarios such as cryptographic systems.
