Overlay(OVL)for patterns placed at two different layers during microchip production is a key parameter that controls the manufacturing process.The tolerance of OVL metrology for the latest microchip needs to be at nan...Overlay(OVL)for patterns placed at two different layers during microchip production is a key parameter that controls the manufacturing process.The tolerance of OVL metrology for the latest microchip needs to be at nanometer scale.This paper discusses the influence on the accuracy and sensitivity of diffraction-based overlay(DBO)after developing inspection and after etching inspection by the asymmetrical deformation of the OVL mark induced by chemical mechanical polishing or etching.We show that the accuracy and sensitivity of DBO metrology can be significantly improved by matching the measuring light wavelength to the thickness between layers and by collecting high-order diffraction signals,promising a solution for future OVL metrology equipment.展开更多
We report on the optical performance, structure and thermal stability of periodic multilayer films con- taining Zr and Al（lwt.-%Si） or Al（pure） layers designed for the use as extreme ultraviolet （EUV） high refle...We report on the optical performance, structure and thermal stability of periodic multilayer films con- taining Zr and Al（lwt.-%Si） or Al（pure） layers designed for the use as extreme ultraviolet （EUV） high reflective mirrors in the range of 1~19 am. The comparison of A1/Zr （Al（lwt.-%Si）/Zr and Al（pure）/Zr） multilayers fabricated by direct-current magnetron sputtering shows that the optical and structural per- formances of two systems have much difference because of Si doped in A1. From the results of grazing incidence X-ray reflection （GIXR）, X-ray diffraction （XRD）, and EUV, the Si can disfavor the crystalliza- tion of AI and smooth the interface, consequently increase the reflectance of EUV in the Al（lwt.-%Si）/Zr systems. For the thermal stability of two systems, the first significant structural changes appear at 250 ~C. The interlayers are transformed from symmetrical to asymmetrical, where the Zr-on-A1 interlayers are thicker than Al-on-Zr interlayers. At 295 ~C for Al（pure）/Zr and 298 ~C for Al（lwt.-%Si）/Zr, the interfaces consist of amorphous Al-Zr alloy transform to polycrystalline Al-Zr alloy which can decrease the surface roughness and smooth the interfaces. Above 300 ~C, the interdiffusion becomes larger, which can enlarge the differences between Zr-on-Al and Al-on-Zr interlayers. Based on the analyses, the Si doped in Al cannot only influence the optical and structural performances of Al/Zr systems, but also impact the reaction temperatures in the annealing process.展开更多
With the development of high-volume manufacturing for very-large-scale integrated circuits,the purity of the light source in the extreme ultraviolet lithography(EUVL)system needs to fulfil extreme requirements in orde...With the development of high-volume manufacturing for very-large-scale integrated circuits,the purity of the light source in the extreme ultraviolet lithography(EUVL)system needs to fulfil extreme requirements in order to avoid thermal effect,optical distortion and critical dimension errors caused by out-of-band radiations.This paper reviews the key technologies and developments of the spectral purity systems for both a free-standing system and a built-in system integrated with the collector.The main challenges and developing trends are also discussed,with a view towards practical applications for further improvement.Designing and manufacturing spectral purity systems for EUVL is not a single task;rather,it requires systematic considerations for all relevant modules.Moreover,the requirement of spectral purity filters drives the innovation in filtering technologies,optical micromachining and advanced metrology.展开更多
The multilayer （ML） mirror with high-reflectivity （HR） at a specific emission line of 19.5 nm （Fe line） and low-reflectivity （LR） at 30.4 nm （He line） is needed to be designed and fabricated for observing th...The multilayer （ML） mirror with high-reflectivity （HR） at a specific emission line of 19.5 nm （Fe line） and low-reflectivity （LR） at 30.4 nm （He line） is needed to be designed and fabricated for observing the image of sun. Based on a variety of optimizations utilized different structures, the design is performed and the final results demonstrate that the reflectivity at 30.4 nm does not achieve minimum value when the reflectivity at 19.5 nm reaches the maximum value. The tradeoff should be done between the HR at 19.5 nm and LR at 30.4 nm. One optimized mirror is fabricated by direct current magnetron sputtering and characterized by grazing-incident X-ray diffraction （XRD） and synchrotron radiation （SR）. The experimental results demonstrate that the ML achieves the reflectivity of 33.3% at 19.5 nm and of 9.6× 10-4 at 30.4 nm at the incident angle of 13°.展开更多
基金supported by the Science and Technology Commission of Shanghai Municipality(No.22DZ1100300)。
文摘Overlay(OVL)for patterns placed at two different layers during microchip production is a key parameter that controls the manufacturing process.The tolerance of OVL metrology for the latest microchip needs to be at nanometer scale.This paper discusses the influence on the accuracy and sensitivity of diffraction-based overlay(DBO)after developing inspection and after etching inspection by the asymmetrical deformation of the OVL mark induced by chemical mechanical polishing or etching.We show that the accuracy and sensitivity of DBO metrology can be significantly improved by matching the measuring light wavelength to the thickness between layers and by collecting high-order diffraction signals,promising a solution for future OVL metrology equipment.
文摘We report on the optical performance, structure and thermal stability of periodic multilayer films con- taining Zr and Al（lwt.-%Si） or Al（pure） layers designed for the use as extreme ultraviolet （EUV） high reflective mirrors in the range of 1~19 am. The comparison of A1/Zr （Al（lwt.-%Si）/Zr and Al（pure）/Zr） multilayers fabricated by direct-current magnetron sputtering shows that the optical and structural per- formances of two systems have much difference because of Si doped in A1. From the results of grazing incidence X-ray reflection （GIXR）, X-ray diffraction （XRD）, and EUV, the Si can disfavor the crystalliza- tion of AI and smooth the interface, consequently increase the reflectance of EUV in the Al（lwt.-%Si）/Zr systems. For the thermal stability of two systems, the first significant structural changes appear at 250 ~C. The interlayers are transformed from symmetrical to asymmetrical, where the Zr-on-A1 interlayers are thicker than Al-on-Zr interlayers. At 295 ~C for Al（pure）/Zr and 298 ~C for Al（lwt.-%Si）/Zr, the interfaces consist of amorphous Al-Zr alloy transform to polycrystalline Al-Zr alloy which can decrease the surface roughness and smooth the interfaces. Above 300 ~C, the interdiffusion becomes larger, which can enlarge the differences between Zr-on-Al and Al-on-Zr interlayers. Based on the analyses, the Si doped in Al cannot only influence the optical and structural performances of Al/Zr systems, but also impact the reaction temperatures in the annealing process.
基金This work was supported by the Science and Technology Commission of Shanghai Municipality(No.22DZ1100300).
文摘With the development of high-volume manufacturing for very-large-scale integrated circuits,the purity of the light source in the extreme ultraviolet lithography(EUVL)system needs to fulfil extreme requirements in order to avoid thermal effect,optical distortion and critical dimension errors caused by out-of-band radiations.This paper reviews the key technologies and developments of the spectral purity systems for both a free-standing system and a built-in system integrated with the collector.The main challenges and developing trends are also discussed,with a view towards practical applications for further improvement.Designing and manufacturing spectral purity systems for EUVL is not a single task;rather,it requires systematic considerations for all relevant modules.Moreover,the requirement of spectral purity filters drives the innovation in filtering technologies,optical micromachining and advanced metrology.
文摘The multilayer （ML） mirror with high-reflectivity （HR） at a specific emission line of 19.5 nm （Fe line） and low-reflectivity （LR） at 30.4 nm （He line） is needed to be designed and fabricated for observing the image of sun. Based on a variety of optimizations utilized different structures, the design is performed and the final results demonstrate that the reflectivity at 30.4 nm does not achieve minimum value when the reflectivity at 19.5 nm reaches the maximum value. The tradeoff should be done between the HR at 19.5 nm and LR at 30.4 nm. One optimized mirror is fabricated by direct current magnetron sputtering and characterized by grazing-incident X-ray diffraction （XRD） and synchrotron radiation （SR）. The experimental results demonstrate that the ML achieves the reflectivity of 33.3% at 19.5 nm and of 9.6× 10-4 at 30.4 nm at the incident angle of 13°.
