Zinc-ion battery(ZIB)has been regarded as one of the most promising sustainable energy storage systems due to its low cost,safety,and attractive electrochemical performance.However,the metallic zinc anode with uneven ...Zinc-ion battery(ZIB)has been regarded as one of the most promising sustainable energy storage systems due to its low cost,safety,and attractive electrochemical performance.However,the metallic zinc anode with uneven deposition during cycling would result in significant capacity decay,low Coulombic efficiency,and electrolyte consumption,thus the undesirable cyclability severely hampers the practical applications.Herein,a phosphorus-doped carbon protective layer was coated onto the surface of Zn anode via using the plasma-enhanced chemical vapor deposition(PECVD)approach.Enhanced conductivity and lower nucleation overpotential induced by the P-doped carbon protective layer can effectively facilitate the ion diffusion kinetics and suppress side reactions.The as-fabricated P-C/Zn anode demonstrated excellent cycling stability during the zinc plating/stripping process,maintaining a low voltage hysteresis(34.8 m V)for over 1000 h under a current density of 2 m A/cm^(2)and a capacity of 2 m Ah/cm^(2).Moreover,the P-C/Zn||MnO_(2)full cell exhibited high specific capacity of about 252.5 m Ah/g at 2 A/g upon 700 long cycles.This study is helpful to design more efficient zinc-ion batteries towards the future applications.展开更多
0-3 type ferroelectric-phosphor composite ceramics cannot be prepared by the traditional solid-state sintering(SSS)method due to the strong chemical reaction between ferroelectrics and phosphors during high-temperatur...0-3 type ferroelectric-phosphor composite ceramics cannot be prepared by the traditional solid-state sintering(SSS)method due to the strong chemical reaction between ferroelectrics and phosphors during high-temperature sintering.The cold sintering process(CSP)may solve this issue by densifying ceramics at ultralow sintering temperatures.In this work,dense 0-3 type 0.8BaTiO_(3)-0.2CaTiO_(3):Pr^(3+)(0.8BT-0.2CT:Pr^(3+))binary composite ceramics were fabricated at an ultralow temperature of 225℃via CSP with the Ba(OH)2·8H2O hydrated flux.The effects of the Ba(OH)_(2)·8H2O content,sintering temperature,and sintering time on the microstructure and densification of the ceramics were investigated.The density of the composite ceramics prepared by the optimized sintering parameters reaches 89%.Both energy-dispersive X-ray(EDX)spectroscopy and X-ray diffraction(XRD)confirm the existence of BT and CT:Pr^(3+)phases in the prepared ceramics.A strong ferroelectric performance is obtained,and the luminescent properties of CT:Pr^(3+)are preserved for the ceramics.Furthermore,the 0.8BT-0.2CT:Pr^(3+)composite ceramics prepared by CSP have stronger photoluminescence and photo-stimulated luminescence than their counterparts prepared by cold sintering assistance(CSA)and SSS methods.Therefore,CSP is a promising method for combining luminescent and ferroelectric properties into 0-3 type composite ceramics.展开更多
Based on the first-principles density functional theory electronic structure calculation,we investigate the possible phonon-mediated superconductivity in arsenene,a two-dimensional buckled arsenic atomic sheet,under e...Based on the first-principles density functional theory electronic structure calculation,we investigate the possible phonon-mediated superconductivity in arsenene,a two-dimensional buckled arsenic atomic sheet,under electron doping.We find that the strong superconducting pairing interaction results mainly from the pz-like electrons of arsenic atoms and the A1 phonon mode around the K point,and the superconducting transition temperature can be as high as 30.8 K in the arsenene with 0.2 doped electrons per unit cell and 12%-applied biaxial tensile strain.This transition temperature is about ten times higher than that in the bulk arsenic under high pressure.It is also the highest transition temperature that is predicted for electron-doped two-dimensional elemental superconductors,including graphene,silicene,phosphorene,and borophene.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.61904090 and 62464010)Project(No.202306)of State Key Laboratory of Physical Chemistry of Solid Surfaces(Xiamen University)。
文摘Zinc-ion battery(ZIB)has been regarded as one of the most promising sustainable energy storage systems due to its low cost,safety,and attractive electrochemical performance.However,the metallic zinc anode with uneven deposition during cycling would result in significant capacity decay,low Coulombic efficiency,and electrolyte consumption,thus the undesirable cyclability severely hampers the practical applications.Herein,a phosphorus-doped carbon protective layer was coated onto the surface of Zn anode via using the plasma-enhanced chemical vapor deposition(PECVD)approach.Enhanced conductivity and lower nucleation overpotential induced by the P-doped carbon protective layer can effectively facilitate the ion diffusion kinetics and suppress side reactions.The as-fabricated P-C/Zn anode demonstrated excellent cycling stability during the zinc plating/stripping process,maintaining a low voltage hysteresis(34.8 m V)for over 1000 h under a current density of 2 m A/cm^(2)and a capacity of 2 m Ah/cm^(2).Moreover,the P-C/Zn||MnO_(2)full cell exhibited high specific capacity of about 252.5 m Ah/g at 2 A/g upon 700 long cycles.This study is helpful to design more efficient zinc-ion batteries towards the future applications.
基金supported by the National Natural Science Foundation of China(No.12374087)the Key R&D Plan of Zhejiang Province(No.2022C01229)the Science and Technology Innovation 2025 Major Project of Ningbo City(No.2022Z211).
文摘0-3 type ferroelectric-phosphor composite ceramics cannot be prepared by the traditional solid-state sintering(SSS)method due to the strong chemical reaction between ferroelectrics and phosphors during high-temperature sintering.The cold sintering process(CSP)may solve this issue by densifying ceramics at ultralow sintering temperatures.In this work,dense 0-3 type 0.8BaTiO_(3)-0.2CaTiO_(3):Pr^(3+)(0.8BT-0.2CT:Pr^(3+))binary composite ceramics were fabricated at an ultralow temperature of 225℃via CSP with the Ba(OH)2·8H2O hydrated flux.The effects of the Ba(OH)_(2)·8H2O content,sintering temperature,and sintering time on the microstructure and densification of the ceramics were investigated.The density of the composite ceramics prepared by the optimized sintering parameters reaches 89%.Both energy-dispersive X-ray(EDX)spectroscopy and X-ray diffraction(XRD)confirm the existence of BT and CT:Pr^(3+)phases in the prepared ceramics.A strong ferroelectric performance is obtained,and the luminescent properties of CT:Pr^(3+)are preserved for the ceramics.Furthermore,the 0.8BT-0.2CT:Pr^(3+)composite ceramics prepared by CSP have stronger photoluminescence and photo-stimulated luminescence than their counterparts prepared by cold sintering assistance(CSA)and SSS methods.Therefore,CSP is a promising method for combining luminescent and ferroelectric properties into 0-3 type composite ceramics.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFA0302901)the National Natural Science Foundation of China(Grant Nos.11474331,11404383,and 11474004)+1 种基金the Natural Science Foundation of Zhejiang Province,China(Grant No.LY17A040005)the K.C.Wong Magna Fund in Ningbo University
文摘Based on the first-principles density functional theory electronic structure calculation,we investigate the possible phonon-mediated superconductivity in arsenene,a two-dimensional buckled arsenic atomic sheet,under electron doping.We find that the strong superconducting pairing interaction results mainly from the pz-like electrons of arsenic atoms and the A1 phonon mode around the K point,and the superconducting transition temperature can be as high as 30.8 K in the arsenene with 0.2 doped electrons per unit cell and 12%-applied biaxial tensile strain.This transition temperature is about ten times higher than that in the bulk arsenic under high pressure.It is also the highest transition temperature that is predicted for electron-doped two-dimensional elemental superconductors,including graphene,silicene,phosphorene,and borophene.
