Thin films of VO_(2)single-crystalline on(0001)sapphire substrates have been prepared by visible pulsed laser ablation technique.The crystal quality and properties of the films are evaluated through electrical resista...Thin films of VO_(2)single-crystalline on(0001)sapphire substrates have been prepared by visible pulsed laser ablation technique.The crystal quality and properties of the films are evaluated through electrical resistance measurement,x-ray diffraction(XRD),and Rutherford-backscattering spectroscopy/channeling(RBS/C)analysis.The dependence of the surface electrical resistance of the films on the temperature shows semiconductor-to-metal transitions with the resistance change of 7×10^(3)-2×10^(4).The hysteresis widths are from less than 1 to 3 K.XRD and RBS/C data reveal that the films prepared in particular conditions are single-crystalline VO_(2)with the(010)planes parallel to the surface of the sapphire substrate.展开更多
文摘Thin films of VO_(2)single-crystalline on(0001)sapphire substrates have been prepared by visible pulsed laser ablation technique.The crystal quality and properties of the films are evaluated through electrical resistance measurement,x-ray diffraction(XRD),and Rutherford-backscattering spectroscopy/channeling(RBS/C)analysis.The dependence of the surface electrical resistance of the films on the temperature shows semiconductor-to-metal transitions with the resistance change of 7×10^(3)-2×10^(4).The hysteresis widths are from less than 1 to 3 K.XRD and RBS/C data reveal that the films prepared in particular conditions are single-crystalline VO_(2)with the(010)planes parallel to the surface of the sapphire substrate.
