Thin films of three types of fullerene derivatives were prepared through the electrospray deposition (ESD) method. The optimized conditions for the fabrication of the thin films were investigated for different types o...Thin films of three types of fullerene derivatives were prepared through the electrospray deposition (ESD) method. The optimized conditions for the fabrication of the thin films were investigated for different types of fullerene derivatives: [6,6]-phenyl-C61-butyric acid methyl ester, [6,6]-phenyl-C71-butyric acid methyl ester, and indene-C60-monoadduct. The spray diameter during the ESD process was observed as a function of the supply rate achieved by changing the applied voltage. In all cases, the spray diameter increased with increasing applied voltage, reaching the maximum diameter (Dmax) in the voltage range 4 to 6 kV. It was clear that Dmax was influenced by the dipole moments of the fullerene derivatives (as calculated by density functional theory methods). Scanning electron microscopy observation of the?fabricated thin films showed that imbricated structures were formed through the stacking of the fullerene-derivative sheets. Atomic force microscopy images revealed that the density of the imbricated structure was dependent on the spray diameter during the ESD process, and the root-mean-square roughness of the film surface decreased with increasing applied voltage. These findings suggest that the ESD method will be effective for the preparation of fullerene-derivative thin films for the production of organic devices.展开更多
Organic photovoltaic cells (OPVs) have been investigated for a long time, and practical realizations have been also in progress due to their high photovoltaic performance over 12%. In this study, we fabricated normal ...Organic photovoltaic cells (OPVs) have been investigated for a long time, and practical realizations have been also in progress due to their high photovoltaic performance over 12%. In this study, we fabricated normal OPVs and investigated the reason of an improved optical-to-electrical conversion efficiency by annealing the MoOx layer. The photoconversion efficiency was improved up to 5.65% from 2.05% after annealing at 160°C for 5 min, and the external quantum efficiency also increased for all the measurement wavelength ranging from 300 to 900 nm. Especially, the short circuit current density increased among photovoltaic parameters. The carrier transport resistance of photoactive layer was found to be reduced by evaluating the impedance measurement. These results indicate that defects at the MoOx/organic interface were successfully reduced by the thermal annealing process of MoOx layer. The efficient carrier transport was realized for the annealed-device, resulting in the high device performance. In addition, the relaxation and electron recombination times were also reduced by the annealing process, which lead to the improved photovoltaic performance.展开更多
Nonradiative recombination (NRR) centers in n-type GaN samples grown by MOCVD technique on a LT-GaN buffer layer and aAlN buffer layer have been studied by two wavelength excited photoluminescence (TWEPL). The near ba...Nonradiative recombination (NRR) centers in n-type GaN samples grown by MOCVD technique on a LT-GaN buffer layer and aAlN buffer layer have been studied by two wavelength excited photoluminescence (TWEPL). The near band-edge photoluminescence (PL) intensity decreases due to the superposition of below-gap excitation (BGE) light of energies 0.93, 1.17 and 1.27 eV over above-gap excitation (AGE) light of energy 4.66 eV. The decrease in PL intensity due to the addition of the BGE has been explained by a two levels recombination model based on SRH statistics. It indicates the presence of a pair of NRR centers in both samples, which are activated by the BGE. The degree of quenching in PL intensity for the sample grown on LT-GaN buffer layer is stronger than the sample grown on AlN buffer layer for all BGE sources. This result implies that the use of the AlN buffer layer is more effective for reducing the NRR centers in n-GaN layers than the LT-GaN buffer layer. The dependence of PL quenching on the AGE density, the BGE density and temperature has been also investigated. The NRR parameters have been quantitatively determined by solving rate equations and fitting the simulated results with the experimental data.展开更多
A novel high-throughput system, called the stacked slice-gel system for separation and reactions （4SR）, was developed for the analysis of DNA/RNA and protein/peptide. The system provides a novel three-dimensional ge...A novel high-throughput system, called the stacked slice-gel system for separation and reactions （4SR）, was developed for the analysis of DNA/RNA and protein/peptide. The system provides a novel three-dimensional gel electrophoresis approach that exploits the property of stacked slice gels. It allows multiple samples simultaneously to react as well as to be separated, offering a two-dimensional （m×n） sample loading system. For this purpose, high-throughput multi-micro vessels （MMVs） containing variable numbers of wells （100 wells in this paper） have been used, which are made of 25 mm square-size polyacrylamide gels. Furthermore, after electrophoretic separation, a slice gel containing a desired sample can be easily removed and proceeded to the next step. Different biological reactions as well as successive separation of products were effectively carried out dealing with DNA/RNA and protein/peptide. It shows that this system has a diversity of potentials to be developed.展开更多
文摘Thin films of three types of fullerene derivatives were prepared through the electrospray deposition (ESD) method. The optimized conditions for the fabrication of the thin films were investigated for different types of fullerene derivatives: [6,6]-phenyl-C61-butyric acid methyl ester, [6,6]-phenyl-C71-butyric acid methyl ester, and indene-C60-monoadduct. The spray diameter during the ESD process was observed as a function of the supply rate achieved by changing the applied voltage. In all cases, the spray diameter increased with increasing applied voltage, reaching the maximum diameter (Dmax) in the voltage range 4 to 6 kV. It was clear that Dmax was influenced by the dipole moments of the fullerene derivatives (as calculated by density functional theory methods). Scanning electron microscopy observation of the?fabricated thin films showed that imbricated structures were formed through the stacking of the fullerene-derivative sheets. Atomic force microscopy images revealed that the density of the imbricated structure was dependent on the spray diameter during the ESD process, and the root-mean-square roughness of the film surface decreased with increasing applied voltage. These findings suggest that the ESD method will be effective for the preparation of fullerene-derivative thin films for the production of organic devices.
文摘Organic photovoltaic cells (OPVs) have been investigated for a long time, and practical realizations have been also in progress due to their high photovoltaic performance over 12%. In this study, we fabricated normal OPVs and investigated the reason of an improved optical-to-electrical conversion efficiency by annealing the MoOx layer. The photoconversion efficiency was improved up to 5.65% from 2.05% after annealing at 160°C for 5 min, and the external quantum efficiency also increased for all the measurement wavelength ranging from 300 to 900 nm. Especially, the short circuit current density increased among photovoltaic parameters. The carrier transport resistance of photoactive layer was found to be reduced by evaluating the impedance measurement. These results indicate that defects at the MoOx/organic interface were successfully reduced by the thermal annealing process of MoOx layer. The efficient carrier transport was realized for the annealed-device, resulting in the high device performance. In addition, the relaxation and electron recombination times were also reduced by the annealing process, which lead to the improved photovoltaic performance.
文摘Nonradiative recombination (NRR) centers in n-type GaN samples grown by MOCVD technique on a LT-GaN buffer layer and aAlN buffer layer have been studied by two wavelength excited photoluminescence (TWEPL). The near band-edge photoluminescence (PL) intensity decreases due to the superposition of below-gap excitation (BGE) light of energies 0.93, 1.17 and 1.27 eV over above-gap excitation (AGE) light of energy 4.66 eV. The decrease in PL intensity due to the addition of the BGE has been explained by a two levels recombination model based on SRH statistics. It indicates the presence of a pair of NRR centers in both samples, which are activated by the BGE. The degree of quenching in PL intensity for the sample grown on LT-GaN buffer layer is stronger than the sample grown on AlN buffer layer for all BGE sources. This result implies that the use of the AlN buffer layer is more effective for reducing the NRR centers in n-GaN layers than the LT-GaN buffer layer. The dependence of PL quenching on the AGE density, the BGE density and temperature has been also investigated. The NRR parameters have been quantitatively determined by solving rate equations and fitting the simulated results with the experimental data.
文摘A novel high-throughput system, called the stacked slice-gel system for separation and reactions （4SR）, was developed for the analysis of DNA/RNA and protein/peptide. The system provides a novel three-dimensional gel electrophoresis approach that exploits the property of stacked slice gels. It allows multiple samples simultaneously to react as well as to be separated, offering a two-dimensional （m×n） sample loading system. For this purpose, high-throughput multi-micro vessels （MMVs） containing variable numbers of wells （100 wells in this paper） have been used, which are made of 25 mm square-size polyacrylamide gels. Furthermore, after electrophoretic separation, a slice gel containing a desired sample can be easily removed and proceeded to the next step. Different biological reactions as well as successive separation of products were effectively carried out dealing with DNA/RNA and protein/peptide. It shows that this system has a diversity of potentials to be developed.
