Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage cur...Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage current of OSs and compatibility with three-dimensional(3D)architectures have recently sparked renewed interest in their use in semiconductor applications.This review begins by exploring the unique material properties of OSs,which fundamentally originate from their distinct electronic band structure.Subsequently,we focus on atomic layer deposition(ALD),a core technique for growing excellent OS films,covering both basic and advanced processes compatible with 3D scaling.The basic surface reaction mechanisms—adsorption and reaction—and their roles in film growth are introduced.Furthermore,material design strategies,such as cation selection,crystallinity control,anion doping,and heterostructure engineering,are discussed.We also highlight challenges in memory applications,including contact resistance,hydrogen instability,and lack of p-type materials,and discuss the feasibility of ALD-grown OSs as potential solutions.Lastly,we provide an outlook on the role of ALD-grown OSs in memory technologies.This review bridges material fundamentals and device-level requirements,offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices.展开更多
Capacitor-less 2T0C dynamic random-access memory(DRAM)employing oxide semiconductors(OSs)as a channel has great potential in the development of highly scaled three dimensional(3D)-structured devices.However,the use of...Capacitor-less 2T0C dynamic random-access memory(DRAM)employing oxide semiconductors(OSs)as a channel has great potential in the development of highly scaled three dimensional(3D)-structured devices.However,the use of OS and such device structures presents certain challenges,including the trade-off relationship between the field-effect mobility and stability of OSs.Conventional 4-line-based operation of the 2T0C enlarges the entire cell volume and complicates the peripheral circuit.Herein,we proposed an IGO(In-Ga-O)channel 2-line-based 2T0C cell design and operating sequences comparable to those of the conventional Si-channel 1 T1C DRAM.IGO was adopted to achieve high thermal stability above 800℃,and the process conditions were optimized to simultaneously obtain a high μFE of 90.7 cm^(2)·V^(-)1·s^(-1),positive Vth of 0.34 V,superior reliability,and uniformity.The proposed 2-line-based 2T0C DRAM cell successfully exhibited multi-bit operation,with the stored voltage varying from 0 V to 1 V at 0.1 V intervals.Furthermore,for stored voltage intervals of 0.1 V and 0.5 V,the refresh time was 10 s and 1000 s in multi-bit operation;these values were more than 150 and 15000 times longer than those of the conventional Si channel 1T1C DRAM,respectively.A monolithic stacked 2-line-based 2T0C DRAM was fabricated,and a multi-bit operation was confirmed.展开更多
Green-emitting Cs_(4)PbBr_(6) nanocrystals were synthesized by the water-assisted solid-state reaction method for the first time.Although CsPbBr_(3) phases were observed in the X-ray diffraction (XRD) patterns of the ...Green-emitting Cs_(4)PbBr_(6) nanocrystals were synthesized by the water-assisted solid-state reaction method for the first time.Although CsPbBr_(3) phases were observed in the X-ray diffraction (XRD) patterns of the perovskite nanocrystal samples as impurities,the XRD patterns of the samples could be well indexed to the trigonal Cs_(4)PbBr_(6) structure.The Cs_(4)PbBr_(6) perovskite nanocrystals showed a bright green emission with a narrow emission band centered at 518 nm with a full width at half-maximum of 26 nm.The photoluminescence quantum yield (PLQY) of the Cs_(4)PbBr_(6) nanocrystals was 36.8%.The Cs_(4)PbBr_(6) nanocrystal powder showed excellent durability at 85℃ and 85% humidity for 24 h,and retained 82% of the initial PL intensity.The Cs_(4)PbBr_(6) nanocrystal film light-emitting diode chip showed a luminous efficacy of 30.6 lm W_(rad)^(−1).展开更多
基金supported by National Research Foundation of Korea(NRF)funded by Ministry of Science and ICT(MSIT)(No.RS-2023-00260527,RS-2024-00407282,RS-2025-00557667)supported by Hanyang University Industry-University Cooperation Foundation(No.202400000003943)supported by Korea Planning&Evaluation Institute of Industrial Technology(KEIT)funded by South Korean Ministry of Trade,Industry and Energy(MOTIE)(No.RS-2025-25454815,RS-2025-02308064,20017382)。
文摘Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage current of OSs and compatibility with three-dimensional(3D)architectures have recently sparked renewed interest in their use in semiconductor applications.This review begins by exploring the unique material properties of OSs,which fundamentally originate from their distinct electronic band structure.Subsequently,we focus on atomic layer deposition(ALD),a core technique for growing excellent OS films,covering both basic and advanced processes compatible with 3D scaling.The basic surface reaction mechanisms—adsorption and reaction—and their roles in film growth are introduced.Furthermore,material design strategies,such as cation selection,crystallinity control,anion doping,and heterostructure engineering,are discussed.We also highlight challenges in memory applications,including contact resistance,hydrogen instability,and lack of p-type materials,and discuss the feasibility of ALD-grown OSs as potential solutions.Lastly,we provide an outlook on the role of ALD-grown OSs in memory technologies.This review bridges material fundamentals and device-level requirements,offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices.
基金supported by the Technology Innovation Program(Grant Nos.20017382 and 20023023)funded by the Ministry of Trade,Industry&Energy(MOTIE,Republic of Korea)supported by a National Research Foundation of Korea(NRF)grant funded by the Korean Government(MSIT)(Grant No.RS-2023-00260527).
文摘Capacitor-less 2T0C dynamic random-access memory(DRAM)employing oxide semiconductors(OSs)as a channel has great potential in the development of highly scaled three dimensional(3D)-structured devices.However,the use of OS and such device structures presents certain challenges,including the trade-off relationship between the field-effect mobility and stability of OSs.Conventional 4-line-based operation of the 2T0C enlarges the entire cell volume and complicates the peripheral circuit.Herein,we proposed an IGO(In-Ga-O)channel 2-line-based 2T0C cell design and operating sequences comparable to those of the conventional Si-channel 1 T1C DRAM.IGO was adopted to achieve high thermal stability above 800℃,and the process conditions were optimized to simultaneously obtain a high μFE of 90.7 cm^(2)·V^(-)1·s^(-1),positive Vth of 0.34 V,superior reliability,and uniformity.The proposed 2-line-based 2T0C DRAM cell successfully exhibited multi-bit operation,with the stored voltage varying from 0 V to 1 V at 0.1 V intervals.Furthermore,for stored voltage intervals of 0.1 V and 0.5 V,the refresh time was 10 s and 1000 s in multi-bit operation;these values were more than 150 and 15000 times longer than those of the conventional Si channel 1T1C DRAM,respectively.A monolithic stacked 2-line-based 2T0C DRAM was fabricated,and a multi-bit operation was confirmed.
基金supported by the Ministry of Trade,Industry and Energy(MOTIE)and the Korea Institute for Advancement of Technology(KIAT)through the International Cooperative R&D program(P0006844_Development of color conversion nanocrystal luminescence materials for next generation display).
文摘Green-emitting Cs_(4)PbBr_(6) nanocrystals were synthesized by the water-assisted solid-state reaction method for the first time.Although CsPbBr_(3) phases were observed in the X-ray diffraction (XRD) patterns of the perovskite nanocrystal samples as impurities,the XRD patterns of the samples could be well indexed to the trigonal Cs_(4)PbBr_(6) structure.The Cs_(4)PbBr_(6) perovskite nanocrystals showed a bright green emission with a narrow emission band centered at 518 nm with a full width at half-maximum of 26 nm.The photoluminescence quantum yield (PLQY) of the Cs_(4)PbBr_(6) nanocrystals was 36.8%.The Cs_(4)PbBr_(6) nanocrystal powder showed excellent durability at 85℃ and 85% humidity for 24 h,and retained 82% of the initial PL intensity.The Cs_(4)PbBr_(6) nanocrystal film light-emitting diode chip showed a luminous efficacy of 30.6 lm W_(rad)^(−1).
